JPS6337505B2 - - Google Patents

Info

Publication number
JPS6337505B2
JPS6337505B2 JP54068553A JP6855379A JPS6337505B2 JP S6337505 B2 JPS6337505 B2 JP S6337505B2 JP 54068553 A JP54068553 A JP 54068553A JP 6855379 A JP6855379 A JP 6855379A JP S6337505 B2 JPS6337505 B2 JP S6337505B2
Authority
JP
Japan
Prior art keywords
mos capacitor
depletion layer
concentration
substrate
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54068553A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55160463A (en
Inventor
Yoshihiro Takemae
Fumio Baba
Tomio Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6855379A priority Critical patent/JPS55160463A/ja
Publication of JPS55160463A publication Critical patent/JPS55160463A/ja
Publication of JPS6337505B2 publication Critical patent/JPS6337505B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP6855379A 1979-06-01 1979-06-01 Semiconductor memory device Granted JPS55160463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6855379A JPS55160463A (en) 1979-06-01 1979-06-01 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6855379A JPS55160463A (en) 1979-06-01 1979-06-01 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS55160463A JPS55160463A (en) 1980-12-13
JPS6337505B2 true JPS6337505B2 (enrdf_load_stackoverflow) 1988-07-26

Family

ID=13377061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6855379A Granted JPS55160463A (en) 1979-06-01 1979-06-01 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55160463A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182761A (ja) * 1984-02-29 1985-09-18 Fujitsu Ltd 半導体記憶装置
JPS61120463A (ja) * 1984-11-15 1986-06-07 Mitsubishi Electric Corp 半導体記憶装置
JPS62114265A (ja) * 1985-11-13 1987-05-26 Mitsubishi Electric Corp 半導体記憶装置
JPS62141756A (ja) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp 半導体記憶装置
US4702796A (en) * 1985-12-16 1987-10-27 Mitsubishi Denki Kabushiki Kaisha Method for fabricting a semiconductor device
JPS62141757A (ja) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp 半導体記憶装置の製造方法
JPH0752755B2 (ja) * 1987-07-10 1995-06-05 株式会社東芝 半導体装置の製造方法
US5726475A (en) * 1987-07-10 1998-03-10 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells

Also Published As

Publication number Publication date
JPS55160463A (en) 1980-12-13

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