JPS6242398B2 - - Google Patents

Info

Publication number
JPS6242398B2
JPS6242398B2 JP57055289A JP5528982A JPS6242398B2 JP S6242398 B2 JPS6242398 B2 JP S6242398B2 JP 57055289 A JP57055289 A JP 57055289A JP 5528982 A JP5528982 A JP 5528982A JP S6242398 B2 JPS6242398 B2 JP S6242398B2
Authority
JP
Japan
Prior art keywords
layer
type
insulating film
gate
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57055289A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58173869A (ja
Inventor
Yasuhiro Ishii
Yoshimoto Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP57055289A priority Critical patent/JPS58173869A/ja
Publication of JPS58173869A publication Critical patent/JPS58173869A/ja
Publication of JPS6242398B2 publication Critical patent/JPS6242398B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP57055289A 1982-04-05 1982-04-05 化合物半導体電界効果トランジスタの製造方法 Granted JPS58173869A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57055289A JPS58173869A (ja) 1982-04-05 1982-04-05 化合物半導体電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57055289A JPS58173869A (ja) 1982-04-05 1982-04-05 化合物半導体電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58173869A JPS58173869A (ja) 1983-10-12
JPS6242398B2 true JPS6242398B2 (OSRAM) 1987-09-08

Family

ID=12994417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57055289A Granted JPS58173869A (ja) 1982-04-05 1982-04-05 化合物半導体電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58173869A (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59197176A (ja) * 1983-04-22 1984-11-08 Nec Corp 接合ゲ−ト電界効果トランジスタの製造方法
JPH0691264B2 (ja) * 1984-08-18 1994-11-14 富士通株式会社 半導体装置の製造方法
TW359781B (en) * 1993-05-25 1999-06-01 Casio Computer Co Ltd Animal image display controlling devices and method thereof
JP4898511B2 (ja) * 2007-03-23 2012-03-14 株式会社ショーワ 減衰力発生装置
CN102388441B (zh) 2009-04-08 2014-05-07 宜普电源转换公司 增强型GaN高电子迁移率晶体管器件及其制备方法

Also Published As

Publication number Publication date
JPS58173869A (ja) 1983-10-12

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