JPS6242391B2 - - Google Patents

Info

Publication number
JPS6242391B2
JPS6242391B2 JP57007927A JP792782A JPS6242391B2 JP S6242391 B2 JPS6242391 B2 JP S6242391B2 JP 57007927 A JP57007927 A JP 57007927A JP 792782 A JP792782 A JP 792782A JP S6242391 B2 JPS6242391 B2 JP S6242391B2
Authority
JP
Japan
Prior art keywords
semiconductor
film
insulating film
field
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57007927A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58124261A (ja
Inventor
Kenji Maeguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57007927A priority Critical patent/JPS58124261A/ja
Publication of JPS58124261A publication Critical patent/JPS58124261A/ja
Publication of JPS6242391B2 publication Critical patent/JPS6242391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57007927A 1982-01-21 1982-01-21 半導体装置 Granted JPS58124261A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57007927A JPS58124261A (ja) 1982-01-21 1982-01-21 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57007927A JPS58124261A (ja) 1982-01-21 1982-01-21 半導体装置

Publications (2)

Publication Number Publication Date
JPS58124261A JPS58124261A (ja) 1983-07-23
JPS6242391B2 true JPS6242391B2 (en:Method) 1987-09-08

Family

ID=11679152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57007927A Granted JPS58124261A (ja) 1982-01-21 1982-01-21 半導体装置

Country Status (1)

Country Link
JP (1) JPS58124261A (en:Method)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612799B2 (ja) * 1986-03-03 1994-02-16 三菱電機株式会社 積層型半導体装置およびその製造方法
DE69026503T2 (de) * 1990-07-31 1996-11-14 Ibm Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten selbstjustierten Feldeffekttransistoren aus Polisilizium und sich daraus ergebende Struktur
JP2901163B2 (ja) * 1991-08-08 1999-06-07 三菱電機株式会社 半導体装置及びその製造方法
US5859444A (en) * 1991-08-08 1999-01-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JPH0594666A (ja) * 1991-08-29 1993-04-16 S K C:Kk 名刺を用いた情報提供装置
JPH07176688A (ja) * 1993-12-20 1995-07-14 Mitsubishi Electric Corp 半導体集積回路

Also Published As

Publication number Publication date
JPS58124261A (ja) 1983-07-23

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