JPS6241428B2 - - Google Patents
Info
- Publication number
- JPS6241428B2 JPS6241428B2 JP14666879A JP14666879A JPS6241428B2 JP S6241428 B2 JPS6241428 B2 JP S6241428B2 JP 14666879 A JP14666879 A JP 14666879A JP 14666879 A JP14666879 A JP 14666879A JP S6241428 B2 JPS6241428 B2 JP S6241428B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- voltage
- gate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 description 39
- 239000004065 semiconductor Substances 0.000 description 34
- 230000015556 catabolic process Effects 0.000 description 28
- 239000012535 impurity Substances 0.000 description 21
- 238000009792 diffusion process Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14666879A JPS5670662A (en) | 1979-11-13 | 1979-11-13 | Insulated gate type field effect transistor |
| US06/195,683 US4394674A (en) | 1979-10-09 | 1980-10-09 | Insulated gate field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14666879A JPS5670662A (en) | 1979-11-13 | 1979-11-13 | Insulated gate type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5670662A JPS5670662A (en) | 1981-06-12 |
| JPS6241428B2 true JPS6241428B2 (fr) | 1987-09-02 |
Family
ID=15412907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14666879A Granted JPS5670662A (en) | 1979-10-09 | 1979-11-13 | Insulated gate type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5670662A (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4587713A (en) * | 1984-02-22 | 1986-05-13 | Rca Corporation | Method for making vertical MOSFET with reduced bipolar effects |
| US5374843A (en) * | 1991-05-06 | 1994-12-20 | Silinconix, Inc. | Lightly-doped drain MOSFET with improved breakdown characteristics |
| US5386136A (en) * | 1991-05-06 | 1995-01-31 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
| EP0537684B1 (fr) * | 1991-10-15 | 1998-05-20 | Texas Instruments Incorporated | Transistor MOS double-diffusé latéral et sa méthode de fabrication |
| JP2004335990A (ja) | 2003-03-10 | 2004-11-25 | Fuji Electric Device Technology Co Ltd | Ｍｉｓ型半導体装置 |
| JP5560812B2 (ja) * | 2010-03-23 | 2014-07-30 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
-
1979
- 1979-11-13 JP JP14666879A patent/JPS5670662A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5670662A (en) | 1981-06-12 |
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