JPS623995B2 - - Google Patents

Info

Publication number
JPS623995B2
JPS623995B2 JP55172917A JP17291780A JPS623995B2 JP S623995 B2 JPS623995 B2 JP S623995B2 JP 55172917 A JP55172917 A JP 55172917A JP 17291780 A JP17291780 A JP 17291780A JP S623995 B2 JPS623995 B2 JP S623995B2
Authority
JP
Japan
Prior art keywords
erase
gate
memory cell
insulating film
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55172917A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5798192A (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP17291780A priority Critical patent/JPS5798192A/ja
Priority to EP81305348A priority patent/EP0054355B1/en
Priority to DE8181305348T priority patent/DE3174417D1/de
Priority to US06/321,320 priority patent/US4437172A/en
Publication of JPS5798192A publication Critical patent/JPS5798192A/ja
Publication of JPS623995B2 publication Critical patent/JPS623995B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP17291780A 1980-12-08 1980-12-08 Semiconductor storage device Granted JPS5798192A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP17291780A JPS5798192A (en) 1980-12-08 1980-12-08 Semiconductor storage device
EP81305348A EP0054355B1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
DE8181305348T DE3174417D1 (en) 1980-12-08 1981-11-11 Semiconductor memory device
US06/321,320 US4437172A (en) 1980-12-08 1981-11-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17291780A JPS5798192A (en) 1980-12-08 1980-12-08 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5798192A JPS5798192A (en) 1982-06-18
JPS623995B2 true JPS623995B2 (enExample) 1987-01-28

Family

ID=15950739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17291780A Granted JPS5798192A (en) 1980-12-08 1980-12-08 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5798192A (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513901A (en) * 1978-07-17 1980-01-31 Hitachi Ltd Fixed memory of semiconductor

Also Published As

Publication number Publication date
JPS5798192A (en) 1982-06-18

Similar Documents

Publication Publication Date Title
US4803529A (en) Electrically erasable and electrically programmable read only memory
JP3192861B2 (ja) 不揮発性半導体記憶装置
JPS6034199B2 (ja) 半導体記憶装置
EP0053878A2 (en) Semiconductor memory device
EP0054355B1 (en) Semiconductor memory device
US4437174A (en) Semiconductor memory device
US4527259A (en) Semiconductor device having insulated gate type non-volatile semiconductor memory elements
JPH09190696A (ja) Ｎａｎｄ型のフラッシュメモリ素子及びその駆動方法
JP2804066B2 (ja) 不揮発性半導体メモリ装置
JP2713115B2 (ja) 不揮発性半導体記憶装置の製造方法
JP2724150B2 (ja) 不揮発性半導体メモリ装置
JPS623994B2 (enExample)
JPS623993B2 (enExample)
JPS6331114B2 (enExample)
JPS623995B2 (enExample)
JPS6331113B2 (enExample)
JPS6152555B2 (enExample)
JP3210373B2 (ja) 不揮発性半導体記憶装置
JPS5819796A (ja) 半導体記憶装置
JPH0766304A (ja) 半導体記憶装置
JPS623992B2 (enExample)
JPH0150116B2 (enExample)
US5394357A (en) Non-volatile semiconductor memory device
JPS6139752B2 (enExample)
JPH0217879B2 (enExample)