JPH0217879B2 - - Google Patents

Info

Publication number
JPH0217879B2
JPH0217879B2 JP56119782A JP11978281A JPH0217879B2 JP H0217879 B2 JPH0217879 B2 JP H0217879B2 JP 56119782 A JP56119782 A JP 56119782A JP 11978281 A JP11978281 A JP 11978281A JP H0217879 B2 JPH0217879 B2 JP H0217879B2
Authority
JP
Japan
Prior art keywords
gate
erase
memory cell
floating gate
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56119782A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5823390A (ja
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56119782A priority Critical patent/JPS5823390A/ja
Priority to DE8181305349T priority patent/DE3175125D1/de
Priority to EP81305349A priority patent/EP0052982B1/en
Priority to US06/321,322 priority patent/US4803529A/en
Publication of JPS5823390A publication Critical patent/JPS5823390A/ja
Priority to US07/193,079 priority patent/US4910565A/en
Publication of JPH0217879B2 publication Critical patent/JPH0217879B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP56119782A 1980-11-20 1981-07-30 半導体記憶装置 Granted JPS5823390A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56119782A JPS5823390A (ja) 1981-07-30 1981-07-30 半導体記憶装置
DE8181305349T DE3175125D1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
EP81305349A EP0052982B1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
US06/321,322 US4803529A (en) 1980-11-20 1981-11-13 Electrically erasable and electrically programmable read only memory
US07/193,079 US4910565A (en) 1980-11-20 1988-05-12 Electrically erasable and electrically programmable read-only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56119782A JPS5823390A (ja) 1981-07-30 1981-07-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS5823390A JPS5823390A (ja) 1983-02-12
JPH0217879B2 true JPH0217879B2 (enExample) 1990-04-23

Family

ID=14770083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56119782A Granted JPS5823390A (ja) 1980-11-20 1981-07-30 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS5823390A (enExample)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513901A (en) * 1978-07-17 1980-01-31 Hitachi Ltd Fixed memory of semiconductor
JPS6025030B2 (ja) * 1978-12-29 1985-06-15 富士通株式会社 半導体記憶装置の駆動方式
CH633123A5 (en) * 1979-08-24 1982-11-15 Centre Electron Horloger Electrically reprogrammable non-volatile memory element
JPS5792489A (en) * 1980-11-29 1982-06-09 Toshiba Corp Semiconductor storage device

Also Published As

Publication number Publication date
JPS5823390A (ja) 1983-02-12

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