JPS623941B2 - - Google Patents
Info
- Publication number
- JPS623941B2 JPS623941B2 JP11736079A JP11736079A JPS623941B2 JP S623941 B2 JPS623941 B2 JP S623941B2 JP 11736079 A JP11736079 A JP 11736079A JP 11736079 A JP11736079 A JP 11736079A JP S623941 B2 JPS623941 B2 JP S623941B2
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- image
- photomask
- exposure
- exposure amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11736079A JPS5642234A (en) | 1979-09-14 | 1979-09-14 | Photomask preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11736079A JPS5642234A (en) | 1979-09-14 | 1979-09-14 | Photomask preparation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5642234A JPS5642234A (en) | 1981-04-20 |
| JPS623941B2 true JPS623941B2 (show.php) | 1987-01-28 |
Family
ID=14709745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11736079A Granted JPS5642234A (en) | 1979-09-14 | 1979-09-14 | Photomask preparation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5642234A (show.php) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4098502B2 (ja) | 2001-07-30 | 2008-06-11 | 株式会社東芝 | マスクの製造方法とlsiの製造方法 |
| KR100420126B1 (ko) * | 2002-01-28 | 2004-03-02 | 삼성전자주식회사 | 반도체 장치의 제조를 위한 패터닝 방법 |
| JP4834310B2 (ja) * | 2005-01-31 | 2011-12-14 | 株式会社東芝 | パターン形成方法、フォトマスクの製造方法、半導体装置の製造方法およびプログラム |
-
1979
- 1979-09-14 JP JP11736079A patent/JPS5642234A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5642234A (en) | 1981-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3197484B2 (ja) | フォトマスク及びその製造方法 | |
| US5807649A (en) | Lithographic patterning method and mask set therefor with light field trim mask | |
| KR100298609B1 (ko) | 위상쉬프트층을갖는포토마스크의제조방법 | |
| JPH03228053A (ja) | 光露光レチクル | |
| JP3160332B2 (ja) | ハーフトーン位相シフトフォトマスク | |
| US5789117A (en) | Transfer method for non-critical photoresist patterns | |
| JPS623941B2 (show.php) | ||
| JP3130777B2 (ja) | フォトマスク及びその製造方法 | |
| JP2798796B2 (ja) | パターン形成方法 | |
| JPH09218500A (ja) | レジストパターンの作製方法 | |
| US5716738A (en) | Dark rims for attenuated phase shift mask | |
| JP3381933B2 (ja) | 露光用マスク | |
| JP2859894B2 (ja) | 露光用マスク、露光用マスクの製造方法およびこれを用いた露光方法 | |
| JPH10186630A (ja) | 位相シフト露光マスクおよびその製造方法 | |
| JPS59141230A (ja) | パタ−ン形成方法 | |
| JP3110801B2 (ja) | フォトマスクの製造方法及びフォトマスク | |
| TW424263B (en) | The polarizing mask for printing the narrow-pitch holes | |
| JP3241809B2 (ja) | 位相シフト層を有するフォトマスクの製造方法 | |
| JPH0451151A (ja) | 位相シフトレチクルの製作方法 | |
| US6576376B1 (en) | Tri-tone mask process for dense and isolated patterns | |
| JPH06347993A (ja) | 位相シフトマスクおよびその製造方法 | |
| JP2624335B2 (ja) | レジスト露光方法 | |
| TW473821B (en) | Microlithography process to reduce the proximity effect | |
| JP2892753B2 (ja) | ホトマスクおよびホトマスクの製造方法 | |
| JPH05275303A (ja) | 露光方法およびそれに用いるフォトマスク |