JPS6237537B2 - - Google Patents

Info

Publication number
JPS6237537B2
JPS6237537B2 JP53040979A JP4097978A JPS6237537B2 JP S6237537 B2 JPS6237537 B2 JP S6237537B2 JP 53040979 A JP53040979 A JP 53040979A JP 4097978 A JP4097978 A JP 4097978A JP S6237537 B2 JPS6237537 B2 JP S6237537B2
Authority
JP
Japan
Prior art keywords
region
transistor
conductivity type
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53040979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54132179A (en
Inventor
Moichi Matsukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4097978A priority Critical patent/JPS54132179A/ja
Publication of JPS54132179A publication Critical patent/JPS54132179A/ja
Publication of JPS6237537B2 publication Critical patent/JPS6237537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP4097978A 1978-04-06 1978-04-06 Complementary insulating gate field effect semiconductor device Granted JPS54132179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4097978A JPS54132179A (en) 1978-04-06 1978-04-06 Complementary insulating gate field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4097978A JPS54132179A (en) 1978-04-06 1978-04-06 Complementary insulating gate field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS54132179A JPS54132179A (en) 1979-10-13
JPS6237537B2 true JPS6237537B2 (cs) 1987-08-13

Family

ID=12595549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4097978A Granted JPS54132179A (en) 1978-04-06 1978-04-06 Complementary insulating gate field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS54132179A (cs)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1234924B (it) * 1982-09-20 1992-06-02 Semi Processes Inc Circuito integrato cmos con banda di guardia per la protezione contro il 'latch-up'.
JPS632370A (ja) * 1986-06-23 1988-01-07 Nissan Motor Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPS54132179A (en) 1979-10-13

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