JPS6234466Y2 - - Google Patents
Info
- Publication number
- JPS6234466Y2 JPS6234466Y2 JP1981015267U JP1526781U JPS6234466Y2 JP S6234466 Y2 JPS6234466 Y2 JP S6234466Y2 JP 1981015267 U JP1981015267 U JP 1981015267U JP 1526781 U JP1526781 U JP 1526781U JP S6234466 Y2 JPS6234466 Y2 JP S6234466Y2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- silver
- layer
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- 229910052709 silver Inorganic materials 0.000 claims description 21
- 239000004332 silver Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 230000005012 migration Effects 0.000 description 7
- 238000013508 migration Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
【考案の詳細な説明】
本考案は信頼性が高く、廉価な発光ダイオード
基台に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a highly reliable and inexpensive light emitting diode base.
従来、例えば第１図に示すようなプリントパタ
ーン１５，１５を有した基板１１上に発光ダイオ
ード１８を載置する場合には、特開昭53−114071
号公報にされる如く、プリントパターン１５，１
５は銅箔層１２，１２の上にニツケル層１３，１
３をメツキし、されにその上に金層１４，１４を
メツキしていた。このような多層構造にする理由
は銅箔層１２，１２の銅が表面に析出して腐食
が接触不良を生じないためと、配線に用いる金
属細線１９のワイヤボンド特性を良くするため
と、少しでも反射器の役目をさせて、発光ダイ
オード１８から放出された光を有効に用いようと
するものである。そして最表層を金属とするのは
このうちワイヤボンド特性が最も重要な理由
で、例えば特開昭54−146960号公報の如く金属片
を別途用いるよりも生産性よく確実に配線できる
からである。 Conventionally, when mounting a light emitting diode 18 on a substrate 11 having printed patterns 15, 15 as shown in FIG.
As disclosed in the publication, print pattern 15,1
5 is a nickel layer 13,1 on the copper foil layer 12,12.
3 was plated, and gold layers 14 and 14 were plated on top of that. The reason for such a multilayer structure is to prevent the copper of the copper foil layers 12, 12 from depositing on the surface and cause corrosion to cause poor contact, and to improve the wire bonding characteristics of the thin metal wire 19 used for wiring. However, it is intended to effectively use the light emitted from the light emitting diode 18 by making it function as a reflector. The reason why the outermost layer is made of metal is that wire bonding properties are the most important among these, and it is because wiring can be performed more productively and more reliably than by using a separate metal piece, as disclosed in, for example, Japanese Patent Laid-Open No. 54-146960.
ところが、金は貴金属であるため、特開昭48−
88884号公報や実開昭52−129465号公報の如く部
分メツキ法を用いてその量を少なくしても、基台
は高価となる。そこで貴金属の中でも比較的安価
でワイヤボンド特性もほぼ良好な銀を、金のかわ
りに用いることが時々なされている。しかしこの
場合には特公昭54−33919号公報の如く使用中に
銀の流れ出し、いわゆる銀マイグレーシヨン現象
が生じ、短絡事故が生じる。このため後処理を施
こしたり、実開昭48−79253号公報の如く銀に添
加物を入れているが、銀マイグレーシヨン現象は
完全にはなくならないし、対応の仕方によつて工
程が煩雑になつたりワイヤボンド特性や光反射率
が低下するのでなかなか実用にならなかつた。 However, since gold is a precious metal,
Even if the amount is reduced by using a partial plating method as disclosed in Japanese Utility Model No. 88884 and Japanese Utility Model Application Publication No. 52-129465, the base becomes expensive. Therefore, silver, which is relatively inexpensive among noble metals and has generally good wire bonding properties, is sometimes used instead of gold. However, in this case, as disclosed in Japanese Patent Publication No. 54-33919, silver flows out during use, causing a so-called silver migration phenomenon, resulting in a short circuit accident. For this reason, post-treatment is performed or additives are added to silver as in Japanese Utility Model Application Publication No. 48-79253, but the silver migration phenomenon cannot be completely eliminated and the process becomes complicated depending on how to deal with it. It was difficult to put it into practical use because the wire bond properties and light reflectance deteriorated.
本考案はこのような欠点を改めるためになされ
たもので、特に銀マイグレーシヨン現象は電圧が
印加され電流が流れない時に生じやすく、その時
負電圧側から正電圧側に枝状に銀析出がおきると
いう実験結果をもとになされたもので、以下本考
案を実施例に基づいて詳細に説明する。 The present invention was developed to correct these shortcomings. In particular, the silver migration phenomenon is likely to occur when voltage is applied but no current flows, and at that time, branch-like silver precipitation occurs from the negative voltage side to the positive voltage side. This invention was made based on the experimental results, and the present invention will be explained in detail below based on examples.
第２図は本考案の発光ダイオード基台の一実施
例を示すもので、基台として銅張積層樹脂基板
（プリント基板）を例にとつてある。基板１は紙
エポキシ、ガラスエポキシ等の樹脂からなり、厚
さ18〜35μｍの銅箔層２，２が15〜500μｍの間
隔で対向させて積層してある。その上に厚さ３〜
15μｍのニツケル層３，３がメツキしてある。そ
してその一部分に厚さ１〜５μｍの銀層４が選択
メツキしてある。このように対向して設けられた
導電部５，５の銀のない方には、導電性接着剤６
によつて、GaP等のPN接合７を有した発光ダイ
オード８が、ｎ層側を下にして載置固着してあ
る。９はアルミニウム又は金の金属細線で、発光
ダイオード８のＰ層側と導電部５の銀層４とを配
線している。 FIG. 2 shows an embodiment of the light emitting diode base of the present invention, using a copper-clad laminated resin board (printed board) as an example of the base. The substrate 1 is made of a resin such as paper epoxy or glass epoxy, and has copper foil layers 2, 2 with a thickness of 18 to 35 μm stacked facing each other at an interval of 15 to 500 μm. On top of that, the thickness is 3~
A nickel layer 3, 3 of 15 μm is plated. A silver layer 4 having a thickness of 1 to 5 .mu.m is selectively plated on a portion thereof. A conductive adhesive 6 is applied to the side of the conductive parts 5, 5, which are provided facing each other in this way, and which does not have silver.
Accordingly, a light emitting diode 8 having a PN junction 7 made of GaP or the like is mounted and fixed with the n-layer side facing down. Reference numeral 9 denotes a thin metal wire of aluminum or gold, which connects the P layer side of the light emitting diode 8 and the silver layer 4 of the conductive part 5.
上述の例で２つの導電部５，５は近接している
が、発光ダイオード８に順方向に電圧が加わる
と、電流が流れるので銀マイグレーシヨン現象は
生じない。また発光ダイオード８に逆方向に電圧
が加わると、電流は流れないが、銀層４側は正電
圧になるのでやはり銀マイグレーシヨン現象は生
じない。この例で発光ダイオード８のＰ層を下側
にして固着する場合は、導電部５，５の発光ダイ
オード８側は銀メツキ、金属細線９をワイヤボン
ドする側は金メツキにすれば銀マイグレーシヨン
対策としては同等の効果を有する。しかし、ニツ
ケル層３，３のメツキ層を10〜15μｍと厚くして
おけば、前述の銅析出や光反射率の条件は満足さ
れるので上述のようにワイヤボンド側に銀メツキ
をし金メツキを省く方が好ましい。尚、プリント
基板を例にとつて説明したが、リードフレームを
用いた場合にも適用できる。 In the above example, the two conductive parts 5, 5 are close to each other, but when a voltage is applied to the light emitting diode 8 in the forward direction, a current flows, so that the silver migration phenomenon does not occur. Further, when a voltage is applied in the reverse direction to the light emitting diode 8, no current flows, but a positive voltage is applied to the silver layer 4 side, so that no silver migration phenomenon occurs. In this example, when fixing the light emitting diode 8 with the P layer on the lower side, silver plating can be performed on the conductive parts 5, 5 on the light emitting diode 8 side, and gold plating on the side to which the thin metal wire 9 is wire bonded, to prevent silver migration. As a countermeasure, it has the same effect. However, if the plating layer of the nickel layers 3 and 3 is made thick to 10 to 15 μm, the above-mentioned conditions for copper precipitation and light reflectance are satisfied, so the wire bond side is plated with silver and then gold plated as described above. It is preferable to omit . Although the explanation has been given using a printed circuit board as an example, the present invention can also be applied to a case where a lead frame is used.
以上の如く本考案は、相対向して設けられた２
つの導電部と、その一方の導電部にｎ側を下にし
て載置固着されたPN接合を有する発光ダイオー
ドと、発光ダイオードと他方の導電部を接続する
金属細線とを具備した発光ダイオード基台に於て
前記２つの導電部のうち、金属細線と当接する側
の導電部のみに銀メツキが施こされている発光ダ
イオード基台であるから、極めて廉価であり、し
かも銀マイグレーシヨン現象は生じないので信頼
性も高い。 As described above, the present invention provides two
A light emitting diode base comprising two conductive parts, a light emitting diode having a PN junction placed and fixed on one of the conductive parts with the n side facing down, and a thin metal wire connecting the light emitting diode and the other conductive part. Of the two conductive parts, the light emitting diode base is plated with silver only on the side that contacts the thin metal wire, so it is extremely inexpensive and does not cause the silver migration phenomenon. There is no such thing, so it is highly reliable.
第１図は従来の基板を用いた表示器の断面図、
第２図は本考案実施例の発光ダイオード基台の断
面図である。
２，２……銅箔層、３，３……ニツケル層、４
……銀層、５，５……導電部、７……PN接合、
８……発光ダイオード、９……金属細線。
Figure 1 is a cross-sectional view of a display using a conventional board.
FIG. 2 is a sectional view of a light emitting diode base according to an embodiment of the present invention. 2, 2...Copper foil layer, 3,3...Nickel layer, 4
...Silver layer, 5,5...Conductive part, 7...PN junction,
8...Light emitting diode, 9...Thin metal wire.
Claims (1)
合を有し、一方の前記導電部にＮ側を固着剤とし
て載置固着された発光ダイオードと、他方の前記
導電部のみに設けられた銀メツキ層と、発光ダイ
オードのＰ側と導電部の前記銀メツキ層とをワイ
ヤボンド配線する金属細線とを具備した事を特徴
とする発光ダイオード基台。 A light emitting diode having a PN junction and two conductive parts provided facing each other, a light emitting diode placed and fixed on one of the conductive parts with the N side as an adhesive, and a light emitting diode provided only on the other conductive part. A light emitting diode base comprising: a silver plating layer; and a thin metal wire for wire-bonding the P side of the light emitting diode and the silver plating layer of a conductive part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981015267U JPS6234466Y2 (en) | 1981-02-04 | 1981-02-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981015267U JPS6234466Y2 (en) | 1981-02-04 | 1981-02-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57128159U JPS57128159U (en) | 1982-08-10 |
| JPS6234466Y2 true JPS6234466Y2 (en) | 1987-09-02 |
Family
ID=29813269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1981015267U Expired JPS6234466Y2 (en) | 1981-02-04 | 1981-02-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6234466Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54146960A (en) * | 1978-05-10 | 1979-11-16 | Nec Corp | Semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52129465U (en) * | 1976-03-26 | 1977-10-01 |
-
1981
- 1981-02-04 JP JP1981015267U patent/JPS6234466Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54146960A (en) * | 1978-05-10 | 1979-11-16 | Nec Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57128159U (en) | 1982-08-10 |
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