JPS6232629B2 - - Google Patents
Info
- Publication number
- JPS6232629B2 JPS6232629B2 JP58090491A JP9049183A JPS6232629B2 JP S6232629 B2 JPS6232629 B2 JP S6232629B2 JP 58090491 A JP58090491 A JP 58090491A JP 9049183 A JP9049183 A JP 9049183A JP S6232629 B2 JPS6232629 B2 JP S6232629B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- transistor
- word line
- electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58090491A JPS58212165A (ja) | 1983-05-23 | 1983-05-23 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58090491A JPS58212165A (ja) | 1983-05-23 | 1983-05-23 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50071749A Division JPS6034261B2 (ja) | 1975-06-13 | 1975-06-13 | 集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58212165A JPS58212165A (ja) | 1983-12-09 |
| JPS6232629B2 true JPS6232629B2 (enrdf_load_stackoverflow) | 1987-07-15 |
Family
ID=13999995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58090491A Granted JPS58212165A (ja) | 1983-05-23 | 1983-05-23 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58212165A (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2318912A1 (de) * | 1972-06-30 | 1974-01-17 | Ibm | Integrierte halbleiteranordnung |
| GB1441004A (en) * | 1972-11-13 | 1976-06-30 | Siemens Ag | Integrated storage circuits |
-
1983
- 1983-05-23 JP JP58090491A patent/JPS58212165A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58212165A (ja) | 1983-12-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5091768A (en) | Semiconductor device having a funnel shaped inter-level connection | |
| KR950006472B1 (ko) | 반도체기억장치 | |
| JP3229665B2 (ja) | Ｍｏｓｆｅｔの製造方法 | |
| JPS6321351B2 (enrdf_load_stackoverflow) | ||
| KR100500261B1 (ko) | Dram-셀장치및그제조방법 | |
| US6040221A (en) | Semiconductor processing methods of forming a buried contact, a conductive line, an electrical connection to a buried contact area, and a field effect transistor gate | |
| JPH027471A (ja) | ポリシリコンショットキーダイオード | |
| TW465028B (en) | Semiconductor device and method of production thereof | |
| US6521942B2 (en) | Electrically programmable memory cell | |
| JPS6123360A (ja) | 半導体記憶装置およびその製造方法 | |
| JPS6227744B2 (enrdf_load_stackoverflow) | ||
| JPH07201996A (ja) | ドープ領域に対する接触孔の形成方法 | |
| JPS6232629B2 (enrdf_load_stackoverflow) | ||
| JPS6311778B2 (enrdf_load_stackoverflow) | ||
| US5221634A (en) | Method of making semiconductor device employing self diffusion of dopant from contact member for augmenting electrical connection to doped region in substrate | |
| JPH1197529A (ja) | 半導体装置の製造方法 | |
| JPH0142147B2 (enrdf_load_stackoverflow) | ||
| KR100720083B1 (ko) | 액정 표시 장치의 제조 방법 | |
| KR960006032A (ko) | 트랜지스터 및 그 제조방법 | |
| JPS6034261B2 (ja) | 集積回路 | |
| JP2531688B2 (ja) | 半導体装置の製造方法 | |
| KR100390891B1 (ko) | 고집적반도체소자의제조방법 | |
| JPS6036111B2 (ja) | 半導体装置の製造方法 | |
| JPH0120542B2 (enrdf_load_stackoverflow) | ||
| JPS58200553A (ja) | 半導体装置 |