JPS6232609B2 - - Google Patents

Info

Publication number
JPS6232609B2
JPS6232609B2 JP12854380A JP12854380A JPS6232609B2 JP S6232609 B2 JPS6232609 B2 JP S6232609B2 JP 12854380 A JP12854380 A JP 12854380A JP 12854380 A JP12854380 A JP 12854380A JP S6232609 B2 JPS6232609 B2 JP S6232609B2
Authority
JP
Japan
Prior art keywords
transition layer
layer
inp
transition
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12854380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5753928A (en
Inventor
Noryuki Shimano
Yasuhiro Ishii
Yoshimoto Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP12854380A priority Critical patent/JPS5753928A/ja
Publication of JPS5753928A publication Critical patent/JPS5753928A/ja
Publication of JPS6232609B2 publication Critical patent/JPS6232609B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3418—
    • H10P14/2905—
    • H10P14/3211—
    • H10P14/3254—
    • H10P14/3446—

Landscapes

  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP12854380A 1980-09-18 1980-09-18 Compound semiconductor device Granted JPS5753928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12854380A JPS5753928A (en) 1980-09-18 1980-09-18 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12854380A JPS5753928A (en) 1980-09-18 1980-09-18 Compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS5753928A JPS5753928A (en) 1982-03-31
JPS6232609B2 true JPS6232609B2 (OSRAM) 1987-07-15

Family

ID=14987354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12854380A Granted JPS5753928A (en) 1980-09-18 1980-09-18 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5753928A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58191421A (ja) * 1982-05-04 1983-11-08 Nec Corp 化合物半導体成長用基板と化合物半導体の製造方法
JPS61107719A (ja) * 1984-10-31 1986-05-26 Matsushita Electric Ind Co Ltd ３−５化合物単結晶薄膜をそなえたＳｉ基板およびその製造方法
US5011550A (en) * 1987-05-13 1991-04-30 Sharp Kabushiki Kaisha Laminated structure of compound semiconductors
JPH01120012A (ja) * 1987-11-02 1989-05-12 Matsushita Electric Ind Co Ltd 化合物半導体装置

Also Published As

Publication number Publication date
JPS5753928A (en) 1982-03-31

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