JPS6232088A - Preparation of optical recording medium - Google Patents

Preparation of optical recording medium

Info

Publication number
JPS6232088A
JPS6232088A JP17121185A JP17121185A JPS6232088A JP S6232088 A JPS6232088 A JP S6232088A JP 17121185 A JP17121185 A JP 17121185A JP 17121185 A JP17121185 A JP 17121185A JP S6232088 A JPS6232088 A JP S6232088A
Authority
JP
Japan
Prior art keywords
optical recording
compound
recording layer
metal
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17121185A
Other languages
Japanese (ja)
Inventor
Hidekazu Fujii
英一 藤井
Norio Hashimoto
典夫 橋本
Junichiro Kanbe
純一郎 神辺
Yoshio Takasu
高須 義雄
Yoichi Osato
陽一 大里
Ichiro Saito
一郎 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP17121185A priority Critical patent/JPS6232088A/en
Publication of JPS6232088A publication Critical patent/JPS6232088A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/249Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing organometallic compounds
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24304Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318Non-metallic elements
    • G11B2007/24324Sulfur
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318Non-metallic elements
    • G11B2007/24326Halides (F, CI, Br...)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318Non-metallic elements
    • G11B2007/24328Carbon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、レーザー光などの光(ここで言う光とは、上
記レーザー光を含む各種のエネルギー線のことである)
によって情報の記録、再生を行なう光記録媒体の製造法
に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light such as laser light (light here refers to various energy rays including the above-mentioned laser light).
The present invention relates to a method of manufacturing an optical recording medium for recording and reproducing information.

[従来の技術] 基体上に形成された薄膜層にレーザー光を照射して、情
報の記録、再生を行なう光記録媒体が種々提案されてい
る。
[Prior Art] Various optical recording media have been proposed in which information is recorded and reproduced by irradiating a thin film layer formed on a substrate with laser light.

例えば、とスマス81、テルルTe等の低融点金属の薄
膜からなる光記録層を形成し、これにレーザー光を照射
してこれを溶融、蒸発させ、記録ビットを形成し、情報
の記録を行なうものがある。
For example, an optical recording layer made of a thin film of a low melting point metal such as Tomasu 81 or Tellurium Te is formed, and this is irradiated with laser light to melt and evaporate it to form recording bits and record information. There is something.

しかし、このような記録形態で記録ビットを形成させる
ためには、パワーの大きいレーザー光が必要であり、ま
た形成された記録ビットの形状が一様でないという欠点
がある。その結果、記録の再生を行なった際のノイズの
原因となり易く、安定した再生信号が得られない、すな
わち高密度記鋒を達成しにくいという欠点がある。
However, in order to form recording bits in this recording format, a laser beam with high power is required, and there is a drawback that the shape of the formed recording bits is not uniform. As a result, it is easy to cause noise when recording is reproduced, and it is difficult to obtain a stable reproduced signal, that is, it is difficult to achieve high-density recording.

このような光記録層の形成には、真空蒸着法、スパック
リング法、イオンブレーティング法、プラズマCVD法
、熱CVD法、光CVD法などの膜形成方法が試みられ
ており、一般にはスパッタリング法が広く用いられ、企
業化もされている。
To form such an optical recording layer, film forming methods such as vacuum evaporation method, spuckling method, ion blating method, plasma CVD method, thermal CVD method, and photoCVD method have been tried, and generally, sputtering method is used. is widely used and even commercialized.

これらの膜形成方法によって得られる光記録層は、S/
N比、光学的特性、使用環境特性及び保存環境特性、更
には均一性、再現性等の光記録媒体としての緒特性を含
め、生産性あるいは量産性の点においでも、更に総合的
な特性の向上が必要である。
The optical recording layer obtained by these film forming methods is S/
In terms of productivity and mass production, we are developing more comprehensive characteristics, including N ratio, optical characteristics, usage environment characteristics, storage environment characteristics, and even characteristics as an optical recording medium such as uniformity and reproducibility. Improvement is needed.

しかしながら、従来から一般化されているスパッタリン
グによる光記録層の形成法においては、以下のような問
題があった。
However, the conventional method of forming an optical recording layer by sputtering has had the following problems.

すなわち、スパッタリングによる方法においでは、形成
パラメーク−が多く(例えば、基体、スパッタ圧、高周
波電力、ターゲット−基体間距離、排気速度、基体回転
数など)これら多くのバラメーク−による組合せによる
ため、時にはプラズマが不安定な状態になり、形成され
た光記録層に著しい悪影1#を与えることが少なくなか
った。
In other words, in the sputtering method, there are many formation parameters (e.g. substrate, sputtering pressure, high frequency power, target-substrate distance, pumping speed, substrate rotation speed, etc.). becomes unstable and often gives a significant bad shadow 1# to the formed optical recording layer.

そのうえ、製雪特有のパラメーターを装置ごとに選定し
なければならなかった。また、光記録層の表面が荒れた
り、また光記録層および基体界面の膜質が特に劣化しや
すいといった問題、更には成膜中に基体温度が上昇して
膜質の低下を招くといった問題もあった。
In addition, snowmaking-specific parameters had to be selected for each device. In addition, there were other problems such as the surface of the optical recording layer becoming rough, and the film quality at the interface between the optical recording layer and the substrate being particularly susceptible to deterioration, and furthermore, the temperature of the substrate rose during film formation, leading to a decrease in film quality. .

このように、従来法では、光記録層の品質の均一性や環
境特性を満足させつつ、再現性に優れた量産化を行なう
ことができなかった。
As described above, with the conventional method, mass production with excellent reproducibility cannot be achieved while satisfying uniformity of quality and environmental characteristics of the optical recording layer.

[発明が解決しようとする問題点] 本発明の目的は、上述した従来の光記録媒体の製造法の
欠点、殊にスパックリング法の欠点を除去すると同時に
、従来の光記録媒体の形成法によらない新規な光記録媒
体の製造法を提供することにある。         
               1本発明の他の目的は
、光記録媒体の緒特性を向上させることができ、特に媒
体雑音(ノイズ)が少なく、また保存環境特性に優れた
光記録媒体の量産化を容易に達成することのできる光記
録媒体の製造法を提供することにある。
[Problems to be Solved by the Invention] It is an object of the present invention to eliminate the above-mentioned drawbacks of the conventional optical recording medium manufacturing method, particularly the drawbacks of the sputtering method, and at the same time to solve the problems of the conventional optical recording medium manufacturing method. The object of the present invention is to provide a novel method for manufacturing an optical recording medium that does not require the following steps.
1. Another object of the present invention is to easily mass-produce optical recording media that can improve the storage characteristics of optical recording media, particularly have low media noise, and have excellent storage environment characteristics. The object of the present invention is to provide a method for manufacturing an optical recording medium that allows the following.

[問題点を解決するための手段] 上記目的を達成する本発明は、基体上に光記録層を形成
する為の成膜空間に、光記録層形成用の原料となる下記
一般式(^)で表わされる少なくとも一種の化合物と、
該化合物と化学反応する活性種とを導入するとともに、
該光記録層形成用の更に別の原料である金属硫化物を該
成膜空間でほぼ同時に蒸発させることによって、前記基
体上に金属硫化物中に一般式(A)の化合物に由来する
金属Mが分散された光記録層を形成することを特徴とす
る光記録媒体の製造法である。
[Means for Solving the Problems] The present invention achieves the above object by applying the following general formula (^), which is a raw material for forming an optical recording layer, into a film forming space for forming an optical recording layer on a substrate. At least one compound represented by
Introducing an active species that chemically reacts with the compound,
By evaporating metal sulfide, which is still another raw material for forming the optical recording layer, in the film forming space almost simultaneously, a metal M derived from the compound of general formula (A) is added to the metal sulfide on the substrate. This is a method for producing an optical recording medium characterized by forming an optical recording layer in which are dispersed.

RnMm ・・・(A) (但し、mは日の価数に等しいか、または整数倍の正整
数、nはMの価数に等しいか、または整数倍の正整数、
Mは金属元素、日は水素、ハロゲンまたは炭化水素基を
表わす、) [発明の実施態様コ 本発明の方法によって形成される光記録媒体の典型的な
例を第2図に示す。
RnMm...(A) (However, m is a positive integer equal to the valence of day or an integral multiple, n is a positive integer equal to the valence of M or an integral multiple,
M represents a metal element, and H represents hydrogen, halogen, or a hydrocarbon group. Embodiments of the Invention A typical example of an optical recording medium formed by the method of the present invention is shown in FIG.

第2図の光記録媒体において、1はガラス、プラスチッ
ク等の各種材質からなる基体である。
In the optical recording medium shown in FIG. 2, reference numeral 1 denotes a substrate made of various materials such as glass and plastic.

4が本発明の方法によって形成された光記録層であり、
該光記録層4は金属硫化物2中に上記一般式(A)の化
合物に由来する金属3(すなわち式(A)の化合物の「
M」)が分散されたものとなっている。
4 is an optical recording layer formed by the method of the present invention,
The optical recording layer 4 has a metal 3 derived from the compound of the general formula (A) in the metal sulfide 2 (i.e., a metal 3 derived from the compound of the formula (A)).
M”) are dispersed.

金属3としては、具体的にはTe、 Bi、 Sn、 
In、Pb、 Cu、 Ti、 Zr、 Ta、 Au
、 Pt、 Ss、 znなどが挙げられ、これら金属
の一種以上が、SnS、 5b2S、Gem、 Asp
SA、 WS2 、An2s3、In2S3、A92S
Specifically, the metal 3 includes Te, Bi, Sn,
In, Pb, Cu, Ti, Zr, Ta, Au
, Pt, Ss, zn, etc., and one or more of these metals include SnS, 5b2S, Gem, Asp.
SA, WS2, An2s3, In2S3, A92S
.

CrS、  Cod、  TaS2、CLI2S、  
PbS、 Bi253、MnS、  MoSなどの一種
以上からなる金属硫化物2に分散されて、光記録層4が
形成されている。
CrS, Cod, TaS2, CLI2S,
An optical recording layer 4 is formed by being dispersed in a metal sulfide 2 made of one or more of PbS, Bi253, MnS, MoS, etc.

このような光記録層4に、例えばAr−Neレーザー、
半導体レーザーなどのレーザー光を含む各種波長の記録
光が照射されると、金属硫化物2F3よび金属3かうな
る光記録層4の光学的特性(例えば、反射率、透過率、
屈折率等)が変化し、記録光が照射された部分と照射さ
れなかった部分に光学的な差異が生じることによって、
記録が行なわれる。記録の再生は、上記レーザー光のよ
うな再生用の光を記録部分に照射して、光記録層におけ
る光学的差異を検知することによって行なう。
For example, Ar-Ne laser,
When irradiated with recording light of various wavelengths including laser light from a semiconductor laser, the optical properties of the optical recording layer 4 made of metal sulfide 2F3 and metal 3 (for example, reflectance, transmittance,
(refractive index, etc.) changes, creating an optical difference between the areas irradiated with the recording light and the areas that are not irradiated.
Recording is done. Reproduction of recording is performed by irradiating the recorded portion with reproduction light such as the laser beam described above and detecting optical differences in the optical recording layer.

このような光記録層を有する光記録媒体では、記録、再
生が記録ビットの形成によらないので、高密度記録が可
能である。しかも、光記録層を形成する金属硫化物は保
存安定性に優れているため、光記録層の経時変化が防止
され、耐久性に優れた光記録媒体を得ることができる。
In an optical recording medium having such an optical recording layer, high-density recording is possible because recording and reproduction do not depend on the formation of recording bits. Moreover, since the metal sulfide forming the optical recording layer has excellent storage stability, the optical recording layer is prevented from deteriorating over time, and an optical recording medium with excellent durability can be obtained.

尚、第2図には示さなかったが、基体1には記録肥度の
向上をはかる等の目的で、必要に応じていわゆる案内溝
を設けてもよい、また、ti着層、反射防止層あるいは
保護層など、この種の技術で広く知られている各種の機
能層を、基体と光記録層の間に、あるいは光記録層上に
設けてもよい。
Although not shown in FIG. 2, the substrate 1 may be provided with so-called guide grooves as necessary for the purpose of improving recording efficiency, etc. Also, a Ti adhesion layer and an antireflection layer may be provided on the substrate 1. Alternatively, various functional layers widely known in this type of technology, such as a protective layer, may be provided between the substrate and the optical recording layer or on the optical recording layer.

次に、本発明の方法を詳細に説明する。Next, the method of the present invention will be explained in detail.

本発明で云う「活性種」とは、前記化合物(A)と化学
的相互作用を起して例えば化合物(A)にエネルギーを
与えたり、化合物(A)と化学的に反応したりして、化
合物(A)に由来する金属rMJを、光記録層に分散す
ることが出来る状態にする役目を荷うものを云う、従っ
て、「活性種」としでは、形成される光記録層を構成す
る成分を含んでいても良く、或いはその様な成分を含ん
でぃなくとも良い。
The "active species" as used in the present invention refers to species that chemically interact with the compound (A) and, for example, give energy to the compound (A) or chemically react with the compound (A). It refers to a substance that plays a role in making the metal rMJ derived from compound (A) into a state in which it can be dispersed in an optical recording layer.Therefore, as an "active species", it refers to a component constituting the optical recording layer to be formed. It may contain or may not contain such components.

本発明において使用される一般式(A)で示される化合
物(A)は、その金属部分、すなわち「M」が光記録層
の構成成分となり得る化合物である。
The compound (A) represented by the general formula (A) used in the present invention is a compound whose metal portion, ie, "M", can be a constituent of an optical recording layer.

これら化合物としでは、成膜される基体が存在する空間
においで、前記の活性種と分子的衝突を起して化学反応
を起し、基体上に形成される光記録層の成分である金属
rMJの形成に寄与する化学種を自発的に発生するもの
を選択するのがより望ましいものである。しかし、通常
の存在状態では、前記の活性種とは不活性であったり、
或は、     !それ程の活性々がない場合には、化
合物(^)に、その構成成分である金属「MJを完全解
離しない程度の強さの励起エネルギーを成膜前又は成膜
時に与えで、化合物(A) !活性種と化学反応し得る
励起状態にすることが必要であり、又、その様な励起状
t@1こし得る化合物を、本発明の方法に使用される化
合物(A)として採用するものである。
These compounds cause a chemical reaction by molecular collision with the above-mentioned active species in the space where the substrate on which the film is formed exists, and metal rMJ, which is a component of the optical recording layer formed on the substrate, is produced. It is more desirable to select one that spontaneously generates a chemical species that contributes to the formation of. However, in their normal state of existence, the above-mentioned active species may be inactive or
Or! If the compound (A) does not have such activity, excitation energy strong enough to not completely dissociate the metal MJ, which is its constituent component, is applied to the compound (A) before or during film formation. !It is necessary to bring the compound into an excited state capable of chemically reacting with the active species, and a compound capable of producing such an excited state t@1 is employed as the compound (A) used in the method of the present invention. be.

尚、本発明においては、化合物(A)が上記の励起状態
になってりするものを以後「励起種」と呼称することに
する。
In the present invention, compounds in which the compound (A) is in the above-mentioned excited state will hereinafter be referred to as "excited species."

本発明にあいで、一般式(A)で示される化合物(A)
  rRnMm」として、有効に使用されるものとしで
は以下の化合物を挙げることが出来る。
In the present invention, the compound (A) represented by the general formula (A)
Examples of compounds that can be effectively used as "rRnMm" include the following compounds.

即ち「M」は、金属元素、具体的にはTe、 8L、S
n、In、 Pb、 Cu、 Ti%Zr、 Ta、 
Au、 Pt%Se、 2nなどの一種以上が用いられ
る。
That is, "M" is a metal element, specifically Te, 8L, S
n, In, Pb, Cu, Ti%Zr, Ta,
One or more types of Au, Pt%Se, 2n, etc. are used.

rRJとしては、[11[状及び側鎖状の飽和炭化水素
や不飽和炭化水素から誘導される一価、二価及び三価の
炭化水素基、或いは、飽和又は不飽和の単環状の及び多
環状の炭化水素より誘導される一価、二価及び三価の炭
化水素基を挙げることが出来る。
rRJ includes monovalent, divalent and trivalent hydrocarbon groups derived from [11[]-like and side chain saturated hydrocarbons and unsaturated hydrocarbons, or saturated or unsaturated monocyclic and polyvalent hydrocarbon groups. Mention may be made of monovalent, divalent and trivalent hydrocarbon groups derived from cyclic hydrocarbons.

不飽和の炭化水素基としては、炭素・炭素の結合は単一
種の結合だけでなく、−重結合、二重結合、及び二重結
合の中の少なくとも2flの結合を有しでいるものも本
発明の目的の達成に適うものであれば有効に採用され得
る。
The unsaturated hydrocarbon group includes not only a single type of carbon-carbon bond, but also those having at least 2 fl of the - double bond, double bond, and double bond. Any method can be effectively adopted as long as it is suitable for achieving the purpose of the invention.

又、二重結合を複数有する不飽和炭化水素基の場合、非
集積二重結合であっても集積二重結合であっても差支え
ない。
Further, in the case of an unsaturated hydrocarbon group having a plurality of double bonds, it does not matter whether the double bonds are non-integrated double bonds or integrated double bonds.

非環状炭化水素基としてはアルキル基、アルケニル基、
アルキニル基、アルキリデン基、アルキリデン基、アル
キニル基ン基、アルキニル基、アルキリデン基、アルキ
ニル基ン基V!を好ましいものとして挙1プることが出
来、殊に、炭素数としては、好ましくは1〜10、より
好ましくは炭素数1〜7、最適には炭素数1〜5のもの
が望ましい。
Examples of acyclic hydrocarbon groups include alkyl groups, alkenyl groups,
Alkynyl group, alkylidene group, alkylidene group, alkynyl group, alkynyl group, alkylidene group, alkynyl group V! In particular, the number of carbon atoms is preferably 1 to 10, more preferably 1 to 7, and most preferably 1 to 5.

本発明においては、有効に使用される化合物(A)とし
て、標準状態で気体状であるか或いは使用環境下におい
て容易に気化し得るものが選択される様に、上記に列挙
した「R」と「M」との選択において、適宜所望に従っ
て、「8」と「M」との組合せの選択がなされる。
In the present invention, the above-listed "R" and "R" are selected so that a compound (A) that is effectively used is selected to be a compound that is gaseous in a standard state or that can be easily vaporized in the usage environment. In selecting "M", a combination of "8" and "M" is selected as desired.

本発明において、化合物(^)−として、有効に使用さ
れる具体的なものとしては、2nMe3.7nEt3、
Me、 Se、 Me2Te、 Eb Se、 Et2
Te、5eX2.5eXn、SeX、、TeX、 、H
,、Se。
In the present invention, specific compounds that can be effectively used as the compound (^)- include 2nMe3.7nEt3,
Me, Se, Me2Te, Eb Se, Et2
Te, 5eX2.5eXn, SeX, , TeX, ,H
,,Se.

8 iX3、SnX* 、PbEt*、CuX3、Ti
X4.2rL、 TaX5、(PtX2)2(Go)3
、H2Te等を挙げることが出来る。上記において、X
はハロゲン(F、C1,8r、I)、Meはメチル基、
Etはエチル基を示す。
8 iX3, SnX*, PbEt*, CuX3, Ti
X4.2rL, TaX5, (PtX2)2(Go)3
, H2Te, etc. In the above, X
is halogen (F, C1,8r, I), Me is methyl group,
Et represents an ethyl group.

本発明において、光記録層の構成成分である金属硫化物
として、有効に使用されるものとしては、SnS、 5
b2S、  GeS、 AS2S3 、ws2、kl、
Sj。
In the present invention, metal sulfides which are constituents of the optical recording layer include SnS, 5
b2S, GeS, AS2S3, ws2, kl,
Sj.

In、S3、A9.S、  CrS、  CoS、  
TaS2、Cu>S。
In, S3, A9. S, CrS, CoS,
TaS2, Cu>S.

PbS、8i2S3、MnS、  MoSなどが挙げら
れる。これら金属硫化物は、その一種以上が適宜選択さ
れで、成膜空間内で蒸発され、前述した金属「M」とと
もに光記録層を形成する。
Examples include PbS, 8i2S3, MnS, MoS, etc. One or more of these metal sulfides are appropriately selected and evaporated in the film forming space to form an optical recording layer together with the metal "M" described above.

本発明の光記録媒体の製造法は、光記録層が形成される
基体がセットされた成膜空間内に、上記した化合物(A
)と活性種を導入するとともに、上記金属硫化物を該成
膜空間内でほぼ同時に蒸発させることにより達成される
。すなわち、成膜空間内で蒸発した金属硫化物が基体に
蒸着するとともに、該空間内に導入された化合物(A)
と活性種との反応によってもたらされる金属「M」の基
体へのほぼ同時の堆積によって、金属硫化物中に化合物
(A)に由来する金属rMJが分散された光記録層が形
成される。
In the method for producing an optical recording medium of the present invention, the above-mentioned compound (A
) and active species are introduced, and the metal sulfide is evaporated almost simultaneously within the film forming space. That is, the metal sulfide evaporated in the film forming space is deposited on the substrate, and the compound (A) introduced into the film forming space is
The nearly simultaneous deposition of metal "M" onto the substrate caused by the reaction between the compound (A) and the active species forms an optical recording layer in which the metal rMJ derived from the compound (A) is dispersed in the metal sulfide.

この方法によって、成膜空間に導入される化合物(A)
及び活′I!種として、そのままでも分子レベル的相互
衝突によって化学反応を生起し、光記録層中に化合物(
A)に由来する金属「M」を生成させることか出来るも
のを前記に列挙したものの中より夫々選択した場合は、
金属「M」が光記録層中に分散された光記録媒体を得る
ことが出来る。しかし、化合物(A)及び活性種の夫々
の選択    :の仕方によって、上記の化学反応性に
乏しい場合、或いは一層効果的に化学反応を行わせて、
効率良く金属「M」を光記録層中に生成させる場合には
、成膜空間において、化合物(A)及び/又は活性種に
作用する反応促進エネルギー、例えば徒述の活性化空間
において使用されると同様な活性化エネルギーを使用し
ても差支えないのである。
Compound (A) introduced into the film forming space by this method
And live'I! Even as a species, a chemical reaction occurs due to mutual collisions at the molecular level, and a compound (
When each of the metals capable of producing the metal "M" derived from A) is selected from among those listed above,
It is possible to obtain an optical recording medium in which metal "M" is dispersed in the optical recording layer. However, depending on the selection of the compound (A) and the active species, the above chemical reactivity may be poor, or the chemical reaction may be carried out more effectively.
In order to efficiently generate the metal "M" in the optical recording layer, the reaction promoting energy acting on the compound (A) and/or the active species in the film forming space, for example, is used in the activation space mentioned above. There is no problem in using the same activation energy as .

更には、成膜空間に導入する前に化合物(^)を他の活
性化空間において、化合物(A)を前述した励起状態f
こする為1こ励起エネルギーを作用させても良い。
Furthermore, before introducing the compound (^) into the film forming space, the compound (A) is brought into the above-mentioned excited state f in another activation space.
For rubbing, one excitation energy may be applied.

化合物(A)の成膜空間への導入は、上述のようにこれ
を励起状態にして導入してもよいし、何ら励起状態にせ
ずに導入してもよい。
The compound (A) may be introduced into the film forming space in an excited state as described above, or may be introduced without being in an excited state at all.

一方、活性種は成膜空間に導入された時には既に活性を
有している必要があるので、次のようにしてその導入を
行なう、すなわち、活性f!そ生成させる原料に、成膜
空間とは異なる活性化空間で熱、光、放電などの活性化
エネルギーを加えることにより、活性flを生成し、こ
の活性種を成膜空間へ導入することにより行なう。
On the other hand, since the active species must already have activity when introduced into the film-forming space, the introduction is carried out as follows, that is, the activity f! By applying activation energy such as heat, light, or electric discharge to the raw material to be generated in an activation space different from the film-forming space, activated fl is generated, and this active species is introduced into the film-forming space. .

活性化空間に導入され、活性f!そ生成させる原料とl
、 T 1et−好士l −< 1.t ’IC−a 
tt (r) V If ”IR111754にし得る
物質で、水素ラジカルを生成する物質を挙げることが出
来、具体的ζこはH2、D2 、 HD等が挙げられ、
その他、He、 Ar等の稀ガスも挙(プることが出来
る。
Introduced into the activation space, the activation f! The raw materials to produce it and l
, T 1et-Koshil -< 1. t'IC-a
tt (r) V If ” Substances that can be used as IR111754 can include substances that generate hydrogen radicals, and specific examples include H2, D2, HD, etc.
In addition, rare gases such as He and Ar can also be used.

活性化空間において活性種生成物質に活性化作用を起す
活性化エネルギーとしては、具体的には抵抗加熱、赤外
線加熱等による熱エネルギー、レーザー光、水銀ランプ
光、ハロゲンランプ光等の光エネルギー、マイクロ波、
RF、低周波、OC等の放電を利用する電気エネルギー
等々を挙げることが出来、これ等の活性化エネルギーは
活性化空間において単独で活性種生成物質に作用させて
も良く、又、2種以上を併用して作用させても良い。
Specifically, the activation energy that causes an activation effect on the active species generating substance in the activation space includes thermal energy such as resistance heating and infrared heating, light energy such as laser light, mercury lamp light, and halogen lamp light, and microscopic energy. wave,
RF, low frequency, electrical energy using discharge such as OC, etc. can be mentioned, and these activation energies may be applied alone to the active species generating substance in the activation space, or two or more types of activation energy may be applied to the active species generating substance. may be used in combination.

尚、本発明において活性化空間で生成される活性種は上
述のように放電、光、熱等のエネルギーで或いはそれ等
の併用によって励起されて活性化されるばかりではなく
、触媒などとの接触、あるいは添加により生成されても
よい。
In addition, in the present invention, the activated species generated in the activation space are not only excited and activated by energy such as electric discharge, light, heat, etc., or a combination thereof, as described above, but also by contact with a catalyst, etc. Alternatively, it may be generated by addition.

本発明において成膜空間に導入される化合物(A)の総
量と活性化空間から導入される活性種の量の割合は、成
膜条件、化合物(A)及び活性種の種類、所望される光
記録層の特性などで適宜所望に従って決められるが好ま
しくは1000:1〜1:1(導入流量比)が適当であ
り、より好ましくは500:1〜]:5とされるのが望
ましい。
In the present invention, the ratio between the total amount of compound (A) introduced into the film forming space and the amount of active species introduced from the activation space depends on the film forming conditions, the types of compound (A) and active species, and the desired light intensity. Although it can be determined as desired depending on the characteristics of the recording layer, it is preferably 1000:1 to 1:1 (introduction flow rate ratio), and more preferably 500:1 to ]:5.

活性種が化合物(A)との連鎖的化学反応を起さない場
合には、上記の導入量の割合は、好ましくは10:1〜
1:10、より好ましくは4:1〜2:3とされるの望
ましい、成膜時における成膜空間の内圧としては、化合
物(A)及び活性種の選択される種類及び成膜条件等に
従って適宜決定されるが、好ましくはlXl0−2〜5
xlO3Pa、より好ましくは5xlO’ 〜1 xl
O3Pa、最適にはlXl0”〜5XI02Paとされ
るのが望ましい。
When the active species does not cause a chain chemical reaction with compound (A), the ratio of the introduced amount is preferably 10:1 to 1.
The internal pressure of the film formation space during film formation, which is preferably 1:10, more preferably 4:1 to 2:3, is determined according to the selected types of compound (A) and active species, film formation conditions, etc. Although determined appropriately, preferably lXl0-2-5
xlO3Pa, more preferably 5xlO' to 1 xl
O3Pa, most preferably 1X10'' to 5XI02Pa.

又、本発明においては、膜質の均質化を高める等の種々
の目的で、必要に応じて成膜時に基体を加熱することが
可能であるが、成膜時に基体を加熱する必要がある場合
には基体温度としては好ましくは、50〜1000℃、
より好ましくは 100〜900℃、最適には100〜
750℃とされるのが望ましい。
In addition, in the present invention, it is possible to heat the substrate during film formation as necessary for various purposes such as increasing the homogeneity of film quality. The substrate temperature is preferably 50 to 1000°C,
More preferably 100-900°C, optimally 100-900°C
Desirably, the temperature is 750°C.

本発明においで使用される活性種が、化合物(A)との
化学反応が連鎖的に起こる場合には所謂開始剤(in 
it 1ater)としての働きを最小限にすれば良い
ことから、成膜空間に導入されるその導入量としでは、
化学反応が連鎖的に効率良く起こる程度の量が確保され
れば良い。
When the active species used in the present invention undergoes a chain reaction with compound (A), a so-called initiator (initiator) is used.
Since it is sufficient to minimize its function as a 1ater), the amount introduced into the film forming space is as follows:
It is sufficient to secure an amount sufficient to efficiently cause a chain reaction of chemical reactions.

本発明で使用される活性種の寿命は、化合物(A)との
反応性を考慮すれば短い方が良く、成膜時の取扱い易さ
及び成膜空間への輸送等を考慮すれば長い方が良い、又
、活性種の寿命は、成膜空間の内圧にも依存する。
The lifetime of the active species used in the present invention is preferably shorter in consideration of reactivity with compound (A), and longer in consideration of ease of handling during film formation and transport to the film formation space. The lifetime of the active species also depends on the internal pressure of the film forming space.

従って使用される活性種は、所望する特性を有する光記
録層が生産効率も加味して効果的に得られる様に選択さ
れて決定される他の成膜条件との関連性において、適当
な寿命を有する活性種が適     i宜選択されて使
用される。
Therefore, the active species used should be selected and determined in such a way that an optical recording layer with the desired characteristics can be effectively obtained, taking production efficiency into account. An active species having the following properties is appropriately selected and used.

本発明において使用される活性種は、その寿命としで、
上記の点を鑑みて適宜選択された寿命を有する活性種が
具体的に使用される化合物(A)との化学的親和性の適
合範囲内の中より所望に従って適宜選択されるが、好ま
しくは、その寿命としては、本発明の適合範囲の環境下
においで1×10゛4秒以上、より好ましくはlXl0
’秒以上、最適にはlXl0’秒以上であるのが望まし
い。
The active species used in the present invention has a lifetime of
The active species having a lifespan appropriately selected in view of the above points is appropriately selected as desired from within the compatible range of chemical affinity with the compound (A) specifically used, but preferably, Its lifespan is 1 x 10゛4 seconds or more, more preferably 1
It is desirable that the time be at least 10' seconds, most preferably at least 1X10' seconds.

その様な寿命を有することで、成膜空間に導入される化
合物(A)との化学反応の効率を増す。
Having such a long life increases the efficiency of the chemical reaction with the compound (A) introduced into the film forming space.

成膜空間に化合物(A)、及び活性種を導入する際の導
入の仕方は、例えば成膜空間に連結した輸送管を設け、
該輸送管を通じて導入しても良いし、或いは成膜空間に
設置した基体の成膜表面近くまで前記の輸送管を延在さ
せて、先端をノズル状となしで導入しても良いし、輸送
管を二重にして内側の管で一方を、外側の管で他方を、
すなわち例えば内側の管で活性種を、外側の管で少なく
とも一種以上の化合物(A)を夫々輸送して成膜空間中
てこ導入しても良い。
The method of introducing the compound (A) and active species into the film forming space is, for example, by providing a transport pipe connected to the film forming space,
The transport pipe may be introduced through the transport pipe, or the transport pipe may be extended to near the film forming surface of the substrate installed in the film forming space, and the transport pipe may be introduced with a nozzle-shaped tip. Double the tubes and use the inner tube for one side and the outer tube for the other side.
That is, for example, the active species may be transported in the inner pipe and at least one compound (A) may be transported in the outer pipe to be introduced into the film forming space.

本発明の方法においで、前述した金属「M」とともに光
記録層を形成する金属硫化物は、化合物(A)および活
性種が成膜空間内に導入されると(まぼ同時に該空間内
で蒸発される。
In the method of the present invention, the metal sulfide that forms the optical recording layer together with the metal "M" described above, when the compound (A) and the active species are introduced into the film-forming space (almost simultaneously within the space). evaporated.

金属硫化物の蒸発は、成膜空間内に例えばクヌードセン
・セル等の蒸発原水設置し、金属硫化物の蒸着が金属「
M」と金属硫化物とで構成される光記録層の生成速度で
0.01〜1騨/分となるように行なうとよい。
For the evaporation of metal sulfides, the evaporation raw water such as a Knudsen cell is installed in the film formation space, and the metal sulfide is evaporated.
It is preferable to carry out the process so that the production rate of the optical recording layer composed of "M" and metal sulfide is 0.01 to 1 m/min.

本発明の方法を実施するための装置の一例の模式図を第
1図に示す。
A schematic diagram of an example of an apparatus for carrying out the method of the present invention is shown in FIG.

この装置は、成膜室9(成膜空間に相当する)と、該室
9内に股Nされた蒸発源8と、活性化室10(活性化室
間に相当する)とを主要部として構成されている。5お
よび6はガス導入管であって、化合物(A)はガス導入
管5によって成膜室9に導入される。また、活性種原料
がガス導入管6によって活性化室10へ導入され、該室
10内で活性化されたのち活性種が成膜室9に入る。尚
、7は成膜室9内に設置した基体であり、11は成膜室
9内を所望の圧力に保持するための真空ポンプ等からな
るガス排気系である。
The main parts of this device include a film forming chamber 9 (corresponding to a film forming space), an evaporation source 8 disposed within the chamber 9, and an activation chamber 10 (corresponding to between the activation chambers). It is configured. 5 and 6 are gas introduction pipes, and the compound (A) is introduced into the film forming chamber 9 through the gas introduction pipe 5. Further, the active species raw material is introduced into the activation chamber 10 through the gas introduction pipe 6, and after being activated in the chamber 10, the active species enters the film forming chamber 9. Note that 7 is a base body installed in the film forming chamber 9, and 11 is a gas exhaust system including a vacuum pump and the like for maintaining the inside of the film forming chamber 9 at a desired pressure.

[作用] 本発明において使用される活性種は成膜空間で光記録層
を形成する際に、はぼ同時に成膜空間に導入され、且つ
形成される光記録層の成分となる金属「MJを含む前記
化合物(A)及び該化合物(A)の励起種(A)と化学
的に相互作用する。こうしてできた所望の金属「M」が
蒸発源8で使られた金属硫化物の蒸気とともに基体7上
に堆積する。その結果所望の基体上に金属硫化物中に金
属「M」が分散された所望の光記録層4が容易に形成さ
れる。
[Function] The active species used in the present invention is introduced into the film forming space at the same time when forming the optical recording layer in the film forming space, and the active species is introduced into the film forming space at the same time as the metal "MJ" which is a component of the formed optical recording layer. chemically interacts with the compound (A) containing the compound (A) and the excited species (A) of the compound (A). Deposited on 7. As a result, a desired optical recording layer 4 in which metal "M" is dispersed in metal sulfide is easily formed on a desired substrate.

本発明の方法では、光記録層を、該光記録層の1つの成
分である金属硫化物を成膜空間内で蒸発することによっ
て、また、もう1つの成分である金属「MJを上記金属
硫化物の蒸発とほぼ同時に成層空間内に導入される「M
Jを含む化合物(A)とこれと反応する活性種とを反応
させるという別個の方法をほぼ同時に作用させて形成す
るため、金属rMJが金属硫化物中に均一に分散された
光記録層を再現性よく作成することができる。これに加
えて、膜品質の安定した、膜特性の管理された光記録層
を有する光記録媒体を、量産性よく製造することができ
る。
In the method of the present invention, the optical recording layer is formed by evaporating a metal sulfide, which is one component of the optical recording layer, in a film-forming space, and by evaporating the metal ``MJ'', which is another component, into the metal sulfide. “M” is introduced into the stratified space almost simultaneously with the evaporation of matter.
Since the compound (A) containing J is reacted with an active species that reacts with the J-containing compound (A), it is formed by using separate methods almost simultaneously, thereby reproducing an optical recording layer in which the metal rMJ is uniformly dispersed in the metal sulfide. can be easily created. In addition, it is possible to mass-produce an optical recording medium having an optical recording layer with stable film quality and controlled film properties.

[実施例] 以下に本発明の実施例を示す。[Example] Examples of the present invention are shown below.

(実施例) 第1図に示した装置を使用し、以下の如き操作により、
第2図に示した光記録媒体を作成した。
(Example) Using the apparatus shown in Figure 1, the following operations were carried out:
An optical recording medium shown in FIG. 2 was prepared.

基体1としては、予めインジェクション法によって案内
溝を設けた厚ざ1.2mm、 M径200mmのポリカ
ーボネイト基板を用いた。案内溝はピッチ1.6μ、深
さ700人でラセン状に形成した。
As the substrate 1, a polycarbonate substrate with a thickness of 1.2 mm and an M diameter of 200 mm was used, on which guide grooves were previously provided by an injection method. The guide grooves were formed in a spiral shape with a pitch of 1.6μ and a depth of 700.

この基板1を成膜室9内にセ・ントした後、蒸発源8(
本例では、クヌードセン・セルとした)を1200℃に
加熱して、該蒸発源8に予め入れてあいた金属硫化物で
あるSnSを蒸発させた。これとほぼ同時に、化合物(
A)である(CH3)zTet石英ガラ    iス製
のガス導入管5から流入速度60 SCCMで活性化室
10に導入するとともに、H2ガスを石英ガラス製のガ
ス導入管6から活性化室10に導入することによって発
生させた活性種であるところのHラジカルを2003C
CMの流入速度で反応室9に導入した。尚、活性化室1
0では、300WのマイクOat作用させてHラジカル
を発生させた。また、成膜中の成膜室9内の圧力は、ガ
ス排気系11によって25Paとなるように調整した。
After setting this substrate 1 into the film forming chamber 9, the evaporation source 8 (
In this example, a Knudsen cell) was heated to 1200° C. to evaporate SnS, which is a metal sulfide, which had been placed in the evaporation source 8 in advance. At about the same time, the compound (
A) (CH3)zTet is introduced into the activation chamber 10 from the gas introduction pipe 5 made of quartz glass at an inflow rate of 60 SCCM, and H2 gas is introduced into the activation chamber 10 from the gas introduction pipe 6 made of quartz glass. H radicals, which are active species generated by introducing 2003C
CM was introduced into the reaction chamber 9 at an inflow rate. In addition, activation chamber 1
0, a 300 W microphone Oat was applied to generate H radicals. Further, the pressure inside the film forming chamber 9 during film forming was adjusted to 25 Pa by the gas exhaust system 11.

上記操作を1.5分Ml1M続したところ、基板1上に
金属硫化物であるSnS中に、化合物(A)に由来する
金属であるところのTeが、To :  5nS=0.
5 : 0.5 ’の割合で分散した膜厚1000人の
光記録層を有する光記録媒体が得られた。
When the above operation was continued for 1.5 minutes in Ml1M, Te, which is a metal derived from compound (A), was formed on the substrate 1 in SnS, which is a metal sulfide, with To: 5nS=0.
An optical recording medium having an optical recording layer with a thickness of 1000 nm dispersed at a ratio of 5:0.5' was obtained.

以上のようにして作成した光記録媒体の特性を、S/N
比、媒体ノイズおよび保存環境特性によって以下のよう
にして評価した。
The characteristics of the optical recording medium created as described above are determined by the S/N
Evaluation was made in the following manner based on ratio, media noise, and storage environment characteristics.

得られた光記録媒体を、回転数1800 rpmで回転
させながら、記録レーザーパワー10mW、記録周波数
4MHzで記録を行ない、再生レーザーパワー2mWで
再生したところ、32d8のS/N比が得られた。また
、この光記録媒体を温度60℃、湿度80%の環境に1
000時間放置した後のノイズの増加は、4dBの極め
て低いレベルにあり、保存環境特性に優れたものである
ことが分った。
When the obtained optical recording medium was rotated at a rotation speed of 1800 rpm, recording was performed at a recording laser power of 10 mW and a recording frequency of 4 MHz, and reproduction was performed using a reproducing laser power of 2 mW, an S/N ratio of 32d8 was obtained. In addition, this optical recording medium was placed in an environment with a temperature of 60°C and a humidity of 80%.
The increase in noise after being left for 000 hours was at an extremely low level of 4 dB, indicating that the storage environment characteristics were excellent.

これとは別に上記同様の方法に従って、同構成の光記録
媒体を30個作成した。゛これら光記録媒体について、
上記同様の評価を行なったところ、すべての光記録媒体
で上記と同じ32dBのS/N比が得られ、また100
0時間放置した復のノイズの増加は2〜5dBの極めて
低いレベルにあり、ノイズの少ない保存環境特性に優れ
た光記録媒体が、再現性よく量産されていた。
Separately, 30 optical recording media having the same configuration were created according to the same method as above.゛About these optical recording media,
When the same evaluation as above was performed, all optical recording media obtained the same S/N ratio of 32 dB as above, and 100 dB.
The increase in noise after being left for 0 hours was at an extremely low level of 2 to 5 dB, and optical recording media with low noise and excellent storage environment characteristics were mass-produced with good reproducibility.

(比較例) 実施例と同様の構成の光記録媒体を、真空度5 X I
Q’ Paで、電子銃を用いたスパックリング法にて作
成し、実施例と同様の評価を行なった。
(Comparative example) An optical recording medium having the same configuration as that of the example was heated at a vacuum degree of 5
Q'Pa was prepared by the spuckling method using an electron gun, and the same evaluation as in the example was performed.

その結果、S/N比は30dBであり、このときのノイ
ズは実施例のものより2dB多かった。また、温度60
℃、湿度80%の環境に1000時間故直後のノイズの
増加は15dBと、実施例のものよりも著しく増加した
As a result, the S/N ratio was 30 dB, and the noise at this time was 2 dB higher than that of the example. Also, the temperature is 60
℃ and 80% humidity for 1000 hours, the noise increase was 15 dB, which was significantly higher than that of the example.

これとは別に上記同様の方法に従って、同構成の光記録
媒体ヲ30個作成した。これら光記録媒体について、上
記同様の評価を行なったところ、S/N比が、25〜3
2dBの範囲でバラつく再現性にとぼしい光記録媒体で
あった。また、1000時間放置した後のノイズの増加
も5〜20dBと英流側のものよりもかなり高いレベル
にあった。
Separately, 30 optical recording media having the same configuration were created according to the same method as above. When these optical recording media were evaluated in the same manner as above, the S/N ratio was 25 to 3.
It was an optical recording medium with poor reproducibility, which varied within a 2 dB range. Further, the increase in noise after being left for 1000 hours was 5 to 20 dB, which was considerably higher than that on the English flow side.

[発明の効果] 以上に説明した如く本発明の光記録媒体の製造法により
、形成される光記録層の光記録特性を向上させることが
可能となり、媒体ノイズの低減した、保存環境特性に優
れた光記録媒体を再現性よく量産化することができるよ
うになった。
[Effects of the Invention] As explained above, the method for producing an optical recording medium of the present invention makes it possible to improve the optical recording characteristics of the formed optical recording layer, and provides excellent storage environment characteristics with reduced media noise. It has become possible to mass-produce optical recording media with good reproducibility.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の方法を具現化するための製造装置の
模式図の一例であり、第2図は本発明の方法によって作
成した光記録媒体の一例の模式的断面図である。 5.6・・・ガス導入管
FIG. 1 is an example of a schematic diagram of a manufacturing apparatus for embodying the method of the present invention, and FIG. 2 is a schematic cross-sectional view of an example of an optical recording medium produced by the method of the present invention. 5.6...Gas introduction pipe

Claims (1)

【特許請求の範囲】[Claims] (1)基体上に光記録層を形成する為の成膜空間に、光
記録層形成用の原料となる下記一般式(A)で表わされ
る少なくとも一種の化合物と、該化合物と化学反応する
活性種とを導入するとともに、該光記録層形成用の更に
別の原料である金属硫化物を該成膜空間でほぼ同時に蒸
発させることによって、前記基体上に金属硫化物中に一
般式(A)の化合物に由来する金属Mが分散された光記
録層を形成することを特徴とする光記録媒体の製造法。 R_nM_m・・・(A) (但し、mはRの価数に等しいか、または整数倍の正整
数、nはMの価数に等しいか、または整数倍の正整数、
Mは金属元素、Rは水素、ハロゲンまたは炭化水素基を
表わす。)
(1) At least one compound represented by the following general formula (A), which is a raw material for forming the optical recording layer, is placed in the film forming space for forming the optical recording layer on the substrate, and an active substance that chemically reacts with the compound By introducing the seeds and evaporating the metal sulfide, which is another raw material for forming the optical recording layer, in the film forming space almost simultaneously, the general formula (A) is introduced into the metal sulfide onto the substrate. A method for producing an optical recording medium, comprising forming an optical recording layer in which a metal M derived from a compound of R_nM_m...(A) (However, m is a positive integer that is equal to or an integral multiple of the valence of R, n is a positive integer that is equal to or an integral multiple of the valence of M,
M represents a metal element, and R represents hydrogen, halogen, or a hydrocarbon group. )
JP17121185A 1985-08-05 1985-08-05 Preparation of optical recording medium Pending JPS6232088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17121185A JPS6232088A (en) 1985-08-05 1985-08-05 Preparation of optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17121185A JPS6232088A (en) 1985-08-05 1985-08-05 Preparation of optical recording medium

Publications (1)

Publication Number Publication Date
JPS6232088A true JPS6232088A (en) 1987-02-12

Family

ID=15919093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17121185A Pending JPS6232088A (en) 1985-08-05 1985-08-05 Preparation of optical recording medium

Country Status (1)

Country Link
JP (1) JPS6232088A (en)

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