JPS63182188A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPS63182188A JPS63182188A JP62013650A JP1365087A JPS63182188A JP S63182188 A JPS63182188 A JP S63182188A JP 62013650 A JP62013650 A JP 62013650A JP 1365087 A JP1365087 A JP 1365087A JP S63182188 A JPS63182188 A JP S63182188A
- Authority
- JP
- Japan
- Prior art keywords
- recording medium
- film
- recording
- substrate
- atomic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 16
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 11
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 16
- 229910052714 tellurium Inorganic materials 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 2
- 239000004033 plastic Substances 0.000 abstract description 2
- 229920003023 plastic Polymers 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- 230000032683 aging Effects 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 32
- 239000007789 gas Substances 0.000 description 26
- 230000035945 sensitivity Effects 0.000 description 12
- 239000011669 selenium Substances 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 4
- -1 chlorotrifluoroethylene, ethylene Chemical group 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 238000005422 blasting Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- LMDVZDMBPZVAIV-UHFFFAOYSA-N selenium hexafluoride Chemical compound F[Se](F)(F)(F)(F)F LMDVZDMBPZVAIV-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ABQLAMJAQZFPJI-UHFFFAOYSA-N 3-heptyloxolan-2-one Chemical compound CCCCCCCC1CCOC1=O ABQLAMJAQZFPJI-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- PYVHTIWHNXTVPF-UHFFFAOYSA-N F.F.F.F.C=C Chemical compound F.F.F.F.C=C PYVHTIWHNXTVPF-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910018152 SeF6 Inorganic materials 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- GPGMRSSBVJNWRA-UHFFFAOYSA-N hydrochloride hydrofluoride Chemical compound F.Cl GPGMRSSBVJNWRA-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VMTCKFAPVIWNOF-UHFFFAOYSA-N methane tetrahydrofluoride Chemical compound C.F.F.F.F VMTCKFAPVIWNOF-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- NNCGPRGCYAWTAF-UHFFFAOYSA-N tellurium hexafluoride Chemical compound F[Te](F)(F)(F)(F)F NNCGPRGCYAWTAF-UHFFFAOYSA-N 0.000 description 1
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2572—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of organic materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24326—Halides (F, CI, Br...)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2532—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising metals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は光学的記録用媒体に関する。詳しくは、レーザ
ービームを照射して局部的に加熱し、その加熱部に穴も
しくは変形部を形成することによって記録する光学的記
録用媒体に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical recording medium. Specifically, the present invention relates to an optical recording medium in which recording is performed by irradiating a laser beam to locally heat the area and forming holes or deformed areas in the heated area.
（従来の技術及びその問題点）
基板上に形成された薄膜にレーザービームを照射して、
穴もしくは変形部（ビット）を形成するようにした光学
的記録用媒体として、従来よｌ）Ｔｅを使用することが
知られている。Ｔｅは光吸収係数が大きく低融点、低熱
伝導度であるために上記方法による記録において高い感
度を示す。しかし、Ｔｏは酸化され易く酸化されると光
吸収の効率が悪化し、記録感度が低下するという問題が
ある。(Prior art and its problems) A thin film formed on a substrate is irradiated with a laser beam,
It is conventionally known to use Te as an optical recording medium in which holes or deformed portions (bits) are formed. Since Te has a large optical absorption coefficient, low melting point, and low thermal conductivity, it exhibits high sensitivity in recording by the above method. However, To is easily oxidized, and when it is oxidized, there is a problem that the light absorption efficiency deteriorates and the recording sensitivity decreases.
上記問題点を改良したものとして、Ｔｏの他にＢｅを含
ませ合金化したもの、Ｔｏの低酸化物、Ｔｅを有機物重
合膜中に分散させ次もの等がある。（例えば、特開昭ｊ
Ｊ−Ｊ／１０≠号公報、特開昭５ｒ−ｓ４ｃｓＪｒ号公
報、特開昭ｊ７−タ？３２参号公報）
上記記録媒体は、真空蒸着法、イオンブレーティング法
、スパッタリング法により作製が可能である。To improve the above-mentioned problems, there are the following alloys containing Be in addition to To, low oxides of To, and dispersing Te in an organic polymer film. (For example,
J-J/10≠ publication, JP-A-5R-S4CSJr, JP-A-J7-TA? (No. 32 Publication) The recording medium described above can be manufactured by a vacuum evaporation method, an ion blating method, or a sputtering method.
本発明者らは、Ｔｅ ｉたはτθを含む金！！Ｉ４を薄
膜化したＴｅ系記録媒体について検討した結果、これら
の媒体には基板上の膜全面において数千裏から数μｍの
大きさの結晶グレインが発生しやすいことがｘＲ及び電
子線回折、さらには透過電子凹微銅像によって確認され
、これゆえに膜の平滑性、ビット形状、記録感度が悪く
、レーザー光による信号再生時のノイズが高いことを見
い出した。また、上記結晶グレインを有する堆積膜の反
射率は温度６５℃、相対湿度？θチの加速試験において
２１１一時間以内に、初期反射率の７．３倍近くにまで
増加し、経時安定性が極めて悪いことも明らかになった
。The inventors discovered that gold containing Te i or τθ! ! As a result of examining Te-based recording media with thinned I4 films, it was found that crystal grains ranging from several thousand to several micrometers in size are likely to occur in these media over the entire surface of the film on the substrate, using xR and electron diffraction analysis. This was confirmed by a transmission electron concave micro-copper image, and it was found that the smoothness of the film, bit shape, and recording sensitivity were poor, and the noise during signal reproduction by laser light was high. Also, the reflectance of the deposited film with the above crystal grains at a temperature of 65°C and relative humidity? In the θ-chi accelerated test, the reflectance increased to nearly 7.3 times the initial reflectance within one hour, and it was also revealed that the stability over time was extremely poor.
（問題を解決するための手段）
本発明者らは、この様な結果をふまえて更に種々検討し
た結果、イオンブレーティング法又は反応性スパッタリ
ング法によシ基板上に結晶粒及び結晶粒界がなく、従っ
て感度、ピット形状共に良好で場所による記録感度のむ
らがなく、しかも経時安定性の優れた光学的記録媒体が
得られる事を見出し本発明に到達した。(Means for Solving the Problem) As a result of further various studies based on these results, the inventors of the present invention discovered that crystal grains and grain boundaries were formed on a substrate by an ion blasting method or a reactive sputtering method. Therefore, the present inventors have discovered that an optical recording medium with good sensitivity and pit shape, no unevenness in recording sensitivity depending on location, and excellent stability over time can be obtained, resulting in the present invention.
すなわち、本発明の要旨は基板上に記録膜を形成し、記
録膜にレーザー光ビームを照射し穴もしくは変形部を形
成して情報を記録する光学的記録用媒体において、前記
記録膜が少なくともＴｅ、 Ｂｅ及びｙを含む特定組成
の記録膜であることにある。That is, the gist of the present invention is an optical recording medium in which a recording film is formed on a substrate, and information is recorded by irradiating the recording film with a laser beam to form holes or deformed portions, wherein the recording film is made of at least Te. , Be, and y.
（発明の構成） 以下、本発明の詳細な説明する。(Structure of the invention) The present invention will be explained in detail below.
まず本発明に係る記録媒体の基板としては、アクリル樹
脂、ポリカーボネート樹脂等のプラスチック、アルミニ
ウム等の金属又はガラスさらにはこれら基板上に熱硬化
性あるいは光硬化性樹脂を塗布したもの等が挙げられる
。First, the substrate of the recording medium according to the present invention includes plastics such as acrylic resin and polycarbonate resin, metals such as aluminum, or glass, as well as substrates coated with thermosetting or photocurable resins.
本発明においては、この基板上に反応性イオンブレーテ
ィング法又は反応性スパッタリング法によシ、少なくと
もＴｅ、Ｓｅ及びＦの３元素を含む堆積膜を形成させる
。In the present invention, a deposited film containing at least three elements, Te, Se, and F, is formed on this substrate by a reactive ion blasting method or a reactive sputtering method.
反応性イオンブレーティング法においては、フッ化物ガ
スあるいはフッ化物ガスとＡｒガスとの混合ガスからな
る反応性ガスを導入した真空容器中でグロー放電プラズ
マを発生させ、該プラズマ中にＴｏ及びｓｅを含む合金
を蒸発させ、Ｔｅ％Ｓｅ及びＦを含む堆積膜を形成する
。グロー放電の発生方法としては、コイル状電極を用い
た誘導結合高周波放電が一般的である。In the reactive ion blating method, a glow discharge plasma is generated in a vacuum container into which a reactive gas consisting of fluoride gas or a mixed gas of fluoride gas and Ar gas is introduced, and To and se are added to the plasma. The alloy containing Te%Se and F is evaporated to form a deposited film containing Te%Se and F. A common method for generating glow discharge is inductively coupled high-frequency discharge using a coiled electrode.
一方反応性スバッタリング法においては、Ｔｅ及びＳｓ
を含む金属をターゲツト材としてフッ化物ガスとＡｒガ
スとの混合ガスを導入した真空容器中でグロー放電を行
なう事により基板上にＴｅ、 Ｓｅ及びＦを含む堆積膜
を形成する。On the other hand, in the reactive sputtering method, Te and Ss
A deposited film containing Te, Se, and F is formed on the substrate by performing glow discharge in a vacuum container into which a mixed gas of fluoride gas and Ar gas is introduced using a metal containing Te, Se, and F as a target material.
放電に際しては、平行平板型電極を用い、高周波法又は
直流法の常法を用いることができる。For discharging, parallel plate type electrodes can be used and conventional methods such as a high frequency method or a direct current method can be used.
また、上記フッ化物ガスとして、フッ化セレンガスを用
いれば、蒸着源あるいはターゲツト材として、Ｔｏ金金
属るいはＢｅを含まないＴｅ系合金を用いることもでき
る。Furthermore, if selenium fluoride gas is used as the fluoride gas, To gold metal or a Be-free Te alloy can be used as the vapor deposition source or target material.
蒸着源あるいは、ターゲツト材としては、Ｔｅ又はＴｏ
及びＢｅを母材としてＰｂ、 Ｂｉ、ｓｂ、Ｓｎ、 Ｇ
ｅ、 Ａｓ等を含む金属合金が挙げられる。As a vapor deposition source or target material, Te or To is used.
and Be as a base material, Pb, Bi, sb, Sn, G
Examples include metal alloys containing e, As, and the like.
該金属がＴｅ、 Ｂｅ及びＦを含む堆積膜中に含まれる
ことにより、該堆積膜の結晶性、結晶化温度、表面張力
あるいは粘度を制御することができる。By including the metal in the deposited film containing Te, Be, and F, the crystallinity, crystallization temperature, surface tension, or viscosity of the deposited film can be controlled.
７ツ化物ガスとしては例えば四フッ化メタン、四フッ化
エチレン、クロロトリフルオロエチレン、三フッ化エチ
レン、六フッ化プロピレン、７ツ化ビニル、７ツ化ビニ
リデンなどの７ツ化炭素ガス、７ツ化炭化水素ガス、フ
ッ化塩化炭ｆｆｉガｘ６るいは六７ツ化硫黄、六フッ化
セレン、六７ツ化テルルなどのフッ化カル；ゲンガス、
三７ツ化窒素などの７ツ化窒素ガス、四フッ化シリコン
、四フッ化ゲルマニウム等のフッ化金属ガス、さらには
フッ素ガスが用いられる。Examples of the heptadide gas include carbon heptatonide gases such as methane tetrafluoride, ethylene tetrafluoride, chlorotrifluoroethylene, ethylene trifluoride, propylene hexafluoride, vinyl heptatonide, vinylidene heptatide, etc. Fluoride hydrocarbon gas, fluoride chloride carbonffi gas, sulfur hexafluoride, selenium hexafluoride, tellurium hexafluoride; Gengas;
Nitrogen trisulfide gas such as nitrogen trisulfide, metal fluoride gas such as silicon tetrafluoride, germanium tetrafluoride, and even fluorine gas are used.
上記反応性ガスの導入量は得られる堆積膜が非晶質とな
シ、かつ、基板に多大なダメージを与えないように選ば
れる。The amount of the reactive gas introduced is selected so that the resulting deposited film is not amorphous and does not cause significant damage to the substrate.
結果として、堆積膜中に５〜２ｊ原子−のＥｔｅ原子及
びｌ−弘０原子チのＦ原子を含んで耐酸化性が弱く、経
時安定性が悪くなる。また、λ！原子チを越えると穴も
しくは変形部を生じさせるに必要なエネルギーが大きく
なる。すなわち、記録感度が悪くなる。As a result, the deposited film contains 5 to 2j atoms of Ete and 1 to 0 atoms of F, resulting in poor oxidation resistance and poor stability over time. Also, λ! When the number of atoms exceeds 1, the energy required to create a hole or a deformed portion increases. That is, recording sensitivity deteriorates.
一方、Ｆ含有量が／原子チ未満では、該堆積膜は非晶質
と々らず、参〇原子チを越えると、基板にダメージを与
えやすく、また、記録感度が悪くなる。On the other hand, if the F content is less than /atom, the deposited film will not be completely amorphous, and if it exceeds 30,000 atoms, the substrate will be easily damaged and the recording sensitivity will deteriorate.
本発明において、上記Ｔｅ、 Ｂｅ及びＦを含む堆積膜
の厚みは十分な光学的特性（反射率あるいは透過率）が
得られ、かつ、記録感度とピット形状を劣化させない範
囲に選ばれ、通常５０久〜／μｍ、望ましくはコθθ〜
／θθ０Ａとする。In the present invention, the thickness of the deposited film containing Te, Be, and F is selected within a range that provides sufficient optical properties (reflectance or transmittance) and does not deteriorate recording sensitivity and pit shape, and is usually 50 mm thick. long~/μm, preferably θθ~
/θθ0A.
本発明における堆積膜はＸ線及び電子線回折法により一
様な非晶質構造であることが確認された。単なる蒸着法
あるいはＡｒガスのみによるスパッタリング法による堆
積膜は多結晶となるのに対し本発明における堆積膜が一
様な非晶質となる理白は必ずしも明らかではないが、本
発明における反応性ガス分子がフッ素原子を含むために
、グロー放電プラズマ中においてフッ素イオン及びフッ
素ラジカルさらには、Ｓｅ及びＴｅのフン化物が生成し
、基板上においてＴｅ及びＳｅ原子の他に、これらのフ
ッ化物が堆積され、また同時にエツチングが行なわれる
ため、結晶粒の成長が妨げられるためと考えられる。The deposited film in the present invention was confirmed to have a uniform amorphous structure by X-ray and electron diffraction methods. The reason why the deposited film in the present invention is uniformly amorphous is not necessarily clear, whereas the film deposited by a simple vapor deposition method or the sputtering method using only Ar gas becomes polycrystalline. Because the molecules contain fluorine atoms, fluorine ions and fluorine radicals as well as Se and Te fluorides are generated in the glow discharge plasma, and these fluorides are deposited on the substrate in addition to Te and Se atoms. This is also thought to be because the growth of crystal grains is hindered because etching is performed at the same time.
さらに、上述のフッ素イオン又はフッ素ラジカルによる
基板表面の軽いエツチングには基板と堆積膜との間の付
着力を均一化する効果もある。Furthermore, the above-mentioned light etching of the substrate surface by fluorine ions or fluorine radicals also has the effect of uniformizing the adhesion between the substrate and the deposited film.
該非晶質性堆積膜では結晶粒及び結晶粒界が殆んど存在
しないため、これを記録媒体として用いれば、記録感度
及びピット形状を均一化でき、さらに、レーザー光によ
る再生時の反射率ムラがなく、ノイズを低くおさえるこ
とができ従って、高０／Ｎ比（ｃａｒｒｉｅｒ ｔｏ
ｎｏｌｅｓ ｒａｔｌｏ ）を達成することができる。Since there are almost no crystal grains or grain boundaries in the amorphous deposited film, if this is used as a recording medium, recording sensitivity and pit shape can be made uniform, and reflectance unevenness during reproduction by laser light can be made uniform. There is no noise, and noise can be suppressed to a low level. Therefore, a high 0/N ratio (carrier to
noles ratlo) can be achieved.
ま±、Ｓｓを含有することによりＴｅ単独では不可能な
耐酸化性が得られ、経時安定性が大幅に改善される。Furthermore, by containing Ss, oxidation resistance that is not possible with Te alone can be obtained, and the stability over time is significantly improved.
本発明に係る記録媒体は上記のように基板上にＴｅ、Ｓ
ｅ及びＦを含む金属化合物の堆積膜を形成させているが
、さらに基板と該堆積膜との間に記録感度の向上、ピッ
ト形状の改善等のために下引き層を設けることもでき、
さらには、記録媒体保護のために該記録媒体上に保護膜
を設けることもできる。As described above, the recording medium according to the present invention has Te, S and
Although a deposited film of a metal compound containing e and F is formed, an undercoat layer may be further provided between the substrate and the deposited film in order to improve recording sensitivity, pit shape, etc.
Furthermore, a protective film can be provided on the recording medium to protect the recording medium.
以下実施例をもって詳細に説明を行う。A detailed explanation will be given below using examples.
（実施例／）
第１図は反応性スパッタリング法による光学的記録媒体
の製造のための装置の一例である。(Example/) FIG. 1 is an example of an apparatus for manufacturing an optical recording medium by a reactive sputtering method.
図中（１）は真空容器、（２）は電極、（３）はＴｅ又
はＴｅ。In the figure, (1) is a vacuum vessel, (2) is an electrode, and (3) is Te or Te.
Ｓｅを含む合金ターゲット、（４）は基板、（５）はガ
た後、Ａｒガスを導入口（５）よシ導入し、真空容器（
１）の内圧をｓ Ｘ ／ ＯＴｏｒｒとする、引き続き
電極（２）の間に高周波電圧を印加し放電を起こさせる
。この状態を７０分間程度保持しターゲット（３）表面
を清浄にする。その後真空気内を再び／θ Ｔｏｒｒ台
まで排気し、 Ａｒガスと体積比でｊチのＮＦ３ガスを
混合して導入口（５）よシ導入し、全圧を！Ｘ１０
Ｔｏｒｒとし、基板側電極（４）とターゲット側電極（
３）間に／ Ｊ、５４ ＭＢ２．１００Ｎの高周波電力
を印加してグロー放電を生じせしめスパッタリングを行
なった。ターゲットには、原子比Ｔｏｒｊチ、Ｅｅｌ！
チの合金を用い、基板上に４Ｌ Ｏｎｍのスパッタ膜を
堆積させた。該堆積膜中のＢｅ含有量は／３原子チ、Ｆ
含有量は／！原子チであった。ついで、この光学的記録
媒体に波長？３θｎｍのＧａＡｅ半導体レーサーで記録
と再生を行なったところ、感度３ｍｗ。After the alloy target containing Se, (4) is the substrate, and (5) is the gap, Ar gas is introduced through the inlet (5), and the vacuum vessel (
The internal pressure of 1) is set to s x /OTorr, and then a high frequency voltage is applied between the electrodes (2) to cause discharge. This state is maintained for about 70 minutes to clean the surface of the target (3). After that, the vacuum was again evacuated to the /θ Torr range, and NF3 gas of 1/2 volume ratio was mixed with Ar gas and introduced through the inlet (5) to raise the total pressure! X10
Torr, and the substrate side electrode (4) and the target side electrode (
3) A high frequency power of /J, 54MB2.100N was applied between the two to generate a glow discharge and perform sputtering. The targets include atomic ratio Torj, Eel!
A sputtered film of 4 L Onm was deposited on the substrate using the alloy of 1. The Be content in the deposited film is /3 atoms, F
The content is /! It was atomic chi. Next, does this optical recording medium have a wavelength? When recording and reproducing with a 3θnm GaAe semiconductor laser, the sensitivity was 3mW.
０／Ｎ比（ｃａｒｒｉｅｒ ｔｏ ｎｏｉｓｅ ｒａｔ
ｉｏ ） ｓ ２ ｄＢが得られた。0/N ratio (carrier to noise rat
io ) s 2 dB was obtained.
（実施例２）
第２図は反応性イオンブレーティング法による光学記録
媒体製造のための装置の一例であり図中（１）は反応容
器、（２）はガス導入口、（３）は基板、（４）は高周
波コイル、（５）は蒸着用抵抗加熱器、（６）は膜厚モ
ニター、（７）はシャッター、（８）は排気口である。(Example 2) Figure 2 shows an example of an apparatus for manufacturing an optical recording medium by the reactive ion blating method. In the figure, (1) is a reaction vessel, (2) is a gas inlet, and (3) is a substrate. , (4) is a high frequency coil, (5) is a resistance heater for vapor deposition, (6) is a film thickness monitor, (7) is a shutter, and (8) is an exhaust port.
まず真空容器をコＸ ／ ＯＴｏｒｒまで排気した後、
ＳθＦ６ガスを導入し、コイル状の電極に／ Ｊ、！
４ ＭＢＫの高周波電圧を印加してグロー放電を行なう
。ＳｅＦ６ガス流ｔ ／ ０８Ｃｃｍ、 −ｂ”電圧ｊ
Ｘ ／ ＯＴｏｒｒ 、放電電力２０θＷでグロー放
電をおこすと同時に、Ｔｅを抵抗加熱で蒸発させ、基板
上にｊ Ｏｎｍの堆積膜を形成した。First, after evacuating the vacuum container to COX/OTorr,
Introduce SθF6 gas to the coiled electrode / J,!
Glow discharge is performed by applying a high frequency voltage of 4 MBK. SeF6 gas flow t/08Ccm, -b” voltage j
A glow discharge was generated at X/OTorr and a discharge power of 20θW, and at the same time, Te was evaporated by resistance heating to form a deposited film of j Onm on the substrate.
該堆積膜中のＦ３ｅ含有量は７原子チ、Ｆ含有量はＩＯ
原子チであった。実施例／と同様に、半導体レーザーに
よる記録再生を行なつ九ところ感度ｊｍＷ、ａ／Ｎ比ｊ
ＯｄＢ ｆ得た。The F3e content in the deposited film is 7 atoms, and the F content is IO
It was atomic chi. Similarly to Example/, when recording and reproducing using a semiconductor laser, sensitivity jmW, a/N ratio j
I got OdB f.
上記実施例／及び実施例λの堆積膜は非晶質であり、加
速試験において酸化による光学的特性及びＣ／Ｎの劣下
はほとんど見られなかった。The deposited films of Examples/Example λ were amorphous, and almost no deterioration in optical properties and C/N due to oxidation was observed in accelerated tests.
（比較例）
真空容器をｊ Ｘ ／ ＯＴｏｒｒまで排気した後、Ａ
ｒガスｆ！×１０ Ｔｏｒｒまで導入し、／ ３．ｊ
ｔＭＨ２の高周波電力ＳＯＷで基板とターゲットの間
にグロー放電を起こす。(Comparative example) After evacuating the vacuum container to j
r gas f! Introduce up to ×10 Torr, / 3. j
A glow discharge is generated between the substrate and the target using a high frequency power SOW of tMH2.
ターゲットに原子比Ｔｏ ｒ ｓ ％、Ｓｅ ／ ｊチ
の合金を用い、基板上に弘ＯｎｍのＴｅ５ｓ堆積膜を形
成させた。得られた光学的記録媒体は多結晶でろシ半導
体レーザーによる記録読み出し試験を行なったところＣ
／Ｎ比弘ｊ ｄＢであった。An alloy with an atomic ratio of Tor s % and a Se/j ratio was used as a target, and a Te5s deposited film of 10 nm was formed on the substrate. The obtained optical recording medium was polycrystalline, and when a recording readout test was performed using a laser diode laser, it showed C.
/Nhihiroj dB.
（発明の効果）
本発明によれば経時安定性、Ｃ／Ｎ比（ｃａｒｒｉｅｒ
ｔｏ ｎｏｉ１３ｅ ｒａｔｉｏ ）、ビット形状を更
に向上しえた記録媒体を得ることができる。(Effects of the Invention) According to the present invention, stability over time, C/N ratio (carrier
Therefore, it is possible to obtain a recording medium with a further improved bit shape.
第１図及び第２図は本発明の記録用媒体を調造するに用
いる装置の一例の概略図である。
図中／は真空容器、コは電極、３はターゲット、弘は基
板をそれぞれ示す。
出 願 人 三菱化成工業株式会社
代 理 人 弁理士 長径用 −（ほか７名）FIGS. 1 and 2 are schematic diagrams of an example of an apparatus used for preparing the recording medium of the present invention. In the figure, / indicates a vacuum vessel, C indicates an electrode, 3 indicates a target, and Hiroshi indicates a substrate. Applicant: Mitsubishi Chemical Industries, Ltd. Agent: Patent attorney For long diameters - (and 7 others)
Claims (1)
ムを照射し穴もしくは変形部を形成して情報を記録する
光学的記録用媒体において、前記記録膜が少なくともＴ
ｅ、Ｓｅ及びＦを含むものであつて、その含有量がＴｅ
３５〜９４．９原子％、Ｓｅ５〜２５原子％、Ｆ０．１
〜４０原子％であることを特徴とする光学的記録用媒体
。(1) In an optical recording medium in which a recording film is formed on a substrate and information is recorded by irradiating the recording film with a laser beam to form holes or deformed portions, the recording film has at least T
containing e, Se and F, the content of which is Te
35-94.9 at%, Se5-25 at%, F0.1
An optical recording medium characterized in that the content is 40 atomic %.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62013650A JPS63182188A (en) | 1987-01-23 | 1987-01-23 | Optical recording medium |
| EP87301046A EP0242942B1 (en) | 1986-04-24 | 1987-02-05 | Optical recording medium and process for producing the same |
| KR1019870000966A KR910009072B1 (en) | 1986-04-24 | 1987-02-05 | Optical recording carrier and manufacturing process therefor |
| DE8787301046T DE3776386D1 (en) | 1986-04-24 | 1987-02-05 | OPTICAL RECORDING MEDIUM AND METHOD FOR THE PRODUCTION THEREOF. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62013650A JPS63182188A (en) | 1987-01-23 | 1987-01-23 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63182188A true JPS63182188A (en) | 1988-07-27 |
| JPH0462556B2 JPH0462556B2 (en) | 1992-10-06 |
Family
ID=11839100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62013650A Granted JPS63182188A (en) | 1986-04-24 | 1987-01-23 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63182188A (en) |
-
1987
- 1987-01-23 JP JP62013650A patent/JPS63182188A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0462556B2 (en) | 1992-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0195532B1 (en) | An information recording medium | |
| JPS6034897A (en) | Rewritable optical recording medium | |
| JP2003500783A (en) | Hybrid disc manufacturing method and hybrid disc | |
| US4839207A (en) | Optical recording medium and process for producing the same | |
| JPH02171286A (en) | Information recording medium | |
| JPH01196743A (en) | Information recording medium | |
| JPS63182188A (en) | Optical recording medium | |
| EP0242942B1 (en) | Optical recording medium and process for producing the same | |
| JPS6395983A (en) | Optical recording medium | |
| JPH0444812B2 (en) | ||
| JPH0444811B2 (en) | ||
| JPS62154241A (en) | Medium for optical recording | |
| JP2673281B2 (en) | Manufacturing method of optical recording medium | |
| JPS6232087A (en) | Preparation of optical recording medium | |
| KR0121185B1 (en) | Optical recording medium of phase changing type | |
| JPH0562259A (en) | Optical information recording medium and production thereof | |
| CA1258974A (en) | Optical recording medium and process for producing the same | |
| JPH02171289A (en) | Information recording medium | |
| JPS59198543A (en) | Medium for optical recording and manufacture thereof | |
| JPH0793807A (en) | Information recording medium and its production | |
| JP2731202B2 (en) | Information recording medium | |
| JPS6374139A (en) | Optical recording medium | |
| JPS62154247A (en) | Production of recording material | |
| JPS6233349A (en) | Production of optical recording medium | |
| JPH0530195B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |