JPS6230358U - - Google Patents
Info
- Publication number
- JPS6230358U JPS6230358U JP12245785U JP12245785U JPS6230358U JP S6230358 U JPS6230358 U JP S6230358U JP 12245785 U JP12245785 U JP 12245785U JP 12245785 U JP12245785 U JP 12245785U JP S6230358 U JPS6230358 U JP S6230358U
- Authority
- JP
- Japan
- Prior art keywords
- reference resistor
- integrated circuit
- wiring
- polycrystalline silicon
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Analogue/Digital Conversion (AREA)
Description
第１図は本考案の一実施例の回路図、第２図は
第１図に示す実施例のレイアウト図、第３図は第
２図に示す半導体集積回路のＸ―Ｘ′線断面図で
ある。
１…Ｐ型半導体基板、２…Ｎ＋埋込み領域、３
…エピタキシアル領域、４…ベース領域、５，６
…酸化膜、７…多結晶シリコン層、８…白金珪化
物層、Ｒ１，〜，Ｒ７…基準抵抗、Ｑ１，〜，Ｑ
１６…ＮＰＮトランジスタ、Ａ…ベース領域、Ｂ
…ベース電極、Ｃ…基準抵抗、Ｄ…配線層。
Fig. 1 is a circuit diagram of an embodiment of the present invention, Fig. 2 is a layout diagram of the embodiment shown in Fig. 1, and Fig. 3 is a cross-sectional view taken along line X-X' of the semiconductor integrated circuit shown in Fig. 2. be. 1...P-type semiconductor substrate, 2...N + buried region, 3
...Epitaxial region, 4...Base region, 5, 6
...Oxide film, 7...Polycrystalline silicon layer, 8...Platinum silicide layer, R1 , ~, R7 ...Reference resistance, Q1 ,~,Q
16 ...NPN transistor, A...base region, B
...Base electrode, C...Reference resistance, D...Wiring layer.
Claims (1)
―１」（但し、ｎは正の整数）個の比較器と２ｎ
個の基準抵抗とで構成されるｎビツトの並列比較
型のＡ／Ｄ変換器を有する半導体集積回路におい
て、前記基準抵抗及び前記基準抵抗の端子と前記
比較器の基準電圧端子との間を結ぶ配線とが多結
晶シリコン層と金属珪化物層とから成る複合層で
形成されていることを特徴とする半導体集積回路
。 By using polycrystalline silicon for electrodes and wiring ,
-1" (where n is a positive integer) comparators and 2 n
In a semiconductor integrated circuit having an n-bit parallel comparison type A/D converter configured with a reference resistor, a connection is made between the reference resistor and a terminal of the reference resistor and a reference voltage terminal of the comparator. A semiconductor integrated circuit characterized in that wiring is formed of a composite layer consisting of a polycrystalline silicon layer and a metal silicide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12245785U JPS6230358U (en) | 1985-08-08 | 1985-08-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12245785U JPS6230358U (en) | 1985-08-08 | 1985-08-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6230358U true JPS6230358U (en) | 1987-02-24 |
Family
ID=31012661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12245785U Pending JPS6230358U (en) | 1985-08-08 | 1985-08-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6230358U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01303840A (en) * | 1988-05-31 | 1989-12-07 | Toshiba Corp | Portable radiotelephony system |
| JP2007287899A (en) * | 2006-04-17 | 2007-11-01 | Oki Electric Ind Co Ltd | Semiconductor device |
-
1985
- 1985-08-08 JP JP12245785U patent/JPS6230358U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01303840A (en) * | 1988-05-31 | 1989-12-07 | Toshiba Corp | Portable radiotelephony system |
| JP2007287899A (en) * | 2006-04-17 | 2007-11-01 | Oki Electric Ind Co Ltd | Semiconductor device |
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