JPS648754U - - Google Patents
Info
- Publication number
- JPS648754U JPS648754U JP10172587U JP10172587U JPS648754U JP S648754 U JPS648754 U JP S648754U JP 10172587 U JP10172587 U JP 10172587U JP 10172587 U JP10172587 U JP 10172587U JP S648754 U JPS648754 U JP S648754U
- Authority
- JP
- Japan
- Prior art keywords
- mosfet
- gate
- source
- heating element
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 210000000746 body region Anatomy 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
第１図は本考案の一実施例の回路図、第２図及
び第３図はそれぞれ本考案の一実施例の構造断面
図、第４図は薄膜感温抵抗の温度特性図、第５図
は本考案の他の実施例図、第６〜８図は従来装置
の一例図である。
＜符号の説明＞、Ｍ１……メインＭＯＳＦＥＴ
、Ｍ２……カレントミラーＭＯＳＦＥＴ、ＲＳ…
…発熱抵抗体、Ｒｉ……入力抵抗、ＲＴ……薄膜
感温抵抗、ＲＬ……負荷、ＶＢ……電源電圧、１
……ｎ＋基板、２……ｎ基板、３……ｐボデイ領
域、４……ｎ＋ソース領域、５……Ｐ＋ボデイ領
域、６……層間絶縁膜、７……ポリＳｉ、８……
金属配線、９……ゲート酸化膜、１０……フイー
ルド酸化膜、１１……β−ＳｉＣ多結晶薄膜。
Fig. 1 is a circuit diagram of an embodiment of the present invention, Figs. 2 and 3 are structural sectional views of an embodiment of the invention, Fig. 4 is a temperature characteristic diagram of a thin film temperature-sensitive resistor, and Fig. 5 1 is a diagram showing another embodiment of the present invention, and FIGS. 6 to 8 are diagrams showing an example of a conventional device. <Explanation of symbols>, M 1 ... Main MOSFET
, M2 ...Current mirror MOSFET, RS...
...heating resistor, R i ...input resistance, RT ...thin film temperature-sensitive resistor, RL ...load, VB ...power supply voltage, 1
... n + substrate, 2 ... n substrate, 3 ... p body region, 4 ... n + source region, 5 ... P + body region, 6 ... interlayer insulating film, 7 ... poly-Si, 8 ... …
Metal wiring, 9... Gate oxide film, 10... Field oxide film, 11... β-SiC polycrystalline thin film.
Claims (1)
、ドレインが上記第１のＭＯＳＦＥＴのドレイン
と共通に接続され、ゲートが入力端子に接続され
た上記第１のＭＯＳＦＥＴよりセル数の小さいカ
レントミラー用の第２のＭＯＳＦＥＴと、上記第
１のＭＯＳＦＥＴのソースと上記第２のＭＯＳＦ
ＥＴのソースとの間に接続された抵抗発熱体と、
上記第１のＭＯＳＦＥＴのゲートと上記第２のＭ
ＯＳＦＥＴのゲートとの間に接続された入力抵抗
と、一端が上記第１のＭＯＳＦＥＴのゲートと上
記入力抵抗との接続点に接続され、他端が上記第
１のＭＯＳＦＥＴのソースに接続され、かつ上記
抵抗発熱体の近傍に配設された薄膜感温抵抗とを
具備することを特徴とする過温度保護機能を備え
たＭＯＳＦＥＴ。 A first MOSFET for switching the load, and a second MOSFET for current mirror having a smaller number of cells than the first MOSFET whose drain is commonly connected to the drain of the first MOSFET and whose gate is connected to the input terminal. a MOSFET, a source of the first MOSFET, and a second MOSFET;
a resistive heating element connected between the source of the ET;
The gate of the first MOSFET and the second MOSFET
an input resistor connected between the gate of the OSFET, one end connected to a connection point between the gate of the first MOSFET and the input resistor, and the other end connected to the source of the first MOSFET, and A MOSFET equipped with an overtemperature protection function, characterized by comprising a thin film temperature-sensitive resistor disposed near the resistance heating element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10172587U JPS648754U (en) | 1987-07-03 | 1987-07-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10172587U JPS648754U (en) | 1987-07-03 | 1987-07-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS648754U true JPS648754U (en) | 1989-01-18 |
Family
ID=31330980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10172587U Pending JPS648754U (en) | 1987-07-03 | 1987-07-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS648754U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018049912A (en) * | 2016-09-21 | 2018-03-29 | 三菱電機株式会社 | Semiconductor device and power conversion device |
-
1987
- 1987-07-03 JP JP10172587U patent/JPS648754U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018049912A (en) * | 2016-09-21 | 2018-03-29 | 三菱電機株式会社 | Semiconductor device and power conversion device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4142115A (en) | Semiconductor device with a thermal protective device | |
| JPS62161600U (en) | ||
| JPS648754U (en) | ||
| JPH0518127U (en) | Drive circuit for semiconductor switching element | |
| JPH0328517Y2 (en) | ||
| JPH0722515A (en) | Semiconductor integrated circuit | |
| JPS61104786U (en) | ||
| JPS6230358U (en) | ||
| JPH0227752U (en) | ||
| JPS60258904A (en) | Current limiting element | |
| JPS6038038U (en) | Rush current protection device | |
| JPS57210662A (en) | Semiconductor memory device | |
| JPS5839058A (en) | Semiconductor element for temperature sensor | |
| JPS63112355U (en) | ||
| SU1557674A1 (en) | Semiconductor switch | |
| JPS62106165U (en) | ||
| JPH10229222A (en) | Semiconductor temperature switch element | |
| JPS63292654A (en) | Semiconductor device | |
| JPS5516558A (en) | Voltage selective switching circuit | |
| JPS6234828U (en) | ||
| JPS60192627U (en) | transistor protection circuit | |
| JPH0743409B2 (en) | Method for measuring junction temperature of insulated gate bipolar transistor | |
| JPS61193379U (en) | ||
| JPS6071915U (en) | temperature control device | |
| JPH0221826U (en) |