JPS63112355U - - Google Patents
Info
- Publication number
- JPS63112355U JPS63112355U JP462687U JP462687U JPS63112355U JP S63112355 U JPS63112355 U JP S63112355U JP 462687 U JP462687 U JP 462687U JP 462687 U JP462687 U JP 462687U JP S63112355 U JPS63112355 U JP S63112355U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- temperature sensor
- utility
- model registration
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000013021 overheating Methods 0.000 claims description 3
- 230000002265 prevention Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 1
Landscapes
- Emergency Protection Circuit Devices (AREA)
Description
第１図、第２図及び第４図は本考案の半導体素
子の過熱防止装置において半導体素子がＭＯＳＦ
ＥＴの場合の、また第３図は前記装置において半
導体素子がバイポーラトランジスタの場合の実施
例を表わす。
１，１１，２１，３１…半導体素子、３，１３
，２３，３３…温度センサ。
1, 2, and 4 show that in the overheating prevention device for a semiconductor device of the present invention, the semiconductor device is a MOSFET.
In the case of ET, FIG. 3 also shows an embodiment in which the semiconductor element in the device is a bipolar transistor. 1, 11, 21, 31... semiconductor element, 3, 13
, 23, 33...Temperature sensor.
Claims (1)
熱防止装置において、前記半導体素子の温度が所
定の値を越えた場合にその電気抵抗値が変化し前
記半導体素子の駆動端子電圧あるいは駆動端子電
流を制御してその負荷電流を抑制する如くに動作
し得る適宣の温度センサを、前記半導体素子に対
し熱的には良伝導になる如くまた電気的には絶縁
して設ける如くにしてなることを特徴とする半導
体素子の過熱防止装置。 (2) 実用新案登録請求の範囲第１項に記載の装
置において、前記温度センサがサーミスタからな
ることを特徴とする半導体素子の過熱防止装置。[Claims for Utility Model Registration] (1) In a device for preventing overheating of a semiconductor element in a power conversion device or the like, when the temperature of the semiconductor element exceeds a predetermined value, the electric resistance value changes and the semiconductor element is driven. An appropriate temperature sensor capable of operating to control the terminal voltage or drive terminal current to suppress its load current is provided with a temperature sensor that is thermally well conductive and electrically insulated from the semiconductor element. 1. An overheating prevention device for a semiconductor device, characterized in that the device is configured as follows. (2) Utility Model Registration The device according to claim 1, wherein the temperature sensor is a thermistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP462687U JPS63112355U (en) | 1987-01-16 | 1987-01-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP462687U JPS63112355U (en) | 1987-01-16 | 1987-01-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63112355U true JPS63112355U (en) | 1988-07-19 |
Family
ID=30785461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP462687U Pending JPS63112355U (en) | 1987-01-16 | 1987-01-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63112355U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014034052A1 (en) * | 2012-09-03 | 2014-03-06 | パナソニック株式会社 | Lighting device and illumination device equipped with same |
-
1987
- 1987-01-16 JP JP462687U patent/JPS63112355U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014034052A1 (en) * | 2012-09-03 | 2014-03-06 | パナソニック株式会社 | Lighting device and illumination device equipped with same |