JPS6229889B2 - - Google Patents

Info

Publication number
JPS6229889B2
JPS6229889B2 JP57200959A JP20095982A JPS6229889B2 JP S6229889 B2 JPS6229889 B2 JP S6229889B2 JP 57200959 A JP57200959 A JP 57200959A JP 20095982 A JP20095982 A JP 20095982A JP S6229889 B2 JPS6229889 B2 JP S6229889B2
Authority
JP
Japan
Prior art keywords
oxide film
film
region
silicon
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57200959A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58108737A (ja
Inventor
Kunio Aomura
Fujiki Tokuyoshi
Masahiko Nakamae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57200959A priority Critical patent/JPS58108737A/ja
Publication of JPS58108737A publication Critical patent/JPS58108737A/ja
Publication of JPS6229889B2 publication Critical patent/JPS6229889B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0121—
    • H10W10/13—

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP57200959A 1982-11-15 1982-11-15 半導体装置の製造方法 Granted JPS58108737A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57200959A JPS58108737A (ja) 1982-11-15 1982-11-15 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57200959A JPS58108737A (ja) 1982-11-15 1982-11-15 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP51114052A Division JPS6035818B2 (ja) 1976-09-22 1976-09-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58108737A JPS58108737A (ja) 1983-06-28
JPS6229889B2 true JPS6229889B2 (index.php) 1987-06-29

Family

ID=16433150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57200959A Granted JPS58108737A (ja) 1982-11-15 1982-11-15 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58108737A (index.php)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50154077A (index.php) * 1974-05-22 1975-12-11
GB1492447A (en) * 1974-07-25 1977-11-16 Siemens Ag Semiconductor devices

Also Published As

Publication number Publication date
JPS58108737A (ja) 1983-06-28

Similar Documents

Publication Publication Date Title
JPH0693461B2 (ja) 半導体デバイスの製造方法
US4191595A (en) Method of manufacturing PN junctions in a semiconductor region to reach an isolation layer without exposing the semiconductor region surface
JPS62179764A (ja) 壁スペ−サを有するバイポ−ラ半導体装置の製造方法
JPH0828424B2 (ja) 半導体装置およびその製造方法
JP2565162B2 (ja) バイポ−ラトランジスタおよびその製造方法
JPS6229889B2 (index.php)
JPS61135136A (ja) 半導体装置の製造方法
JPS61172346A (ja) 半導体集積回路装置
JPS628939B2 (index.php)
JPS6229891B2 (index.php)
JP3252385B2 (ja) バイポーラトランジスタの製造方法
JPS6229890B2 (index.php)
JP2817184B2 (ja) 半導体装置の製造方法
JPH03131037A (ja) 半導体装置の製造方法
JPH0136709B2 (index.php)
JPS5984543A (ja) バイポ−ラ集積回路装置およびその製造方法
JPS60244036A (ja) 半導体装置とその製造方法
JPS59134868A (ja) 半導体装置の製造方法
JPS60170258A (ja) 半導体装置の製造方法
JPS61290763A (ja) 半導体装置の製造方法
JPS60103640A (ja) 半導体装置
JPS6312380B2 (index.php)
JPS61172369A (ja) 半導体装置の製造方法
JPS639150A (ja) 半導体装置の製造方法
JPH0766214A (ja) バイポーラ型半導体集積回路装置の製造方法