JPS62296508A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To improve the yield of a semiconductor device by providing an Si scatter preventive strip formed by removing SiO2 and bringing polysilicon into contact with an Si substrate between device regions. CONSTITUTION:If Si is scattered at a point D due to certain reason when a laser 3 is scanned, the Si is continuously scattered after the point D. However, when the laser scanning is introduced to an Si scatter preventive strip 2, since polysilicon 7 is in contact with an Si substrate 5, the heat of a laser light is escaped to the substrate. Thus, the melting state of the Si is suppressed to eliminate the scatter of the Si. After a point E, a stable recrystallization can be achieved. Thus, the yield of an SI integrated circuit can be improved.

Description

Detailed Description of the Invention 3. Detailed Description of the Invention Industrial Field of Application The present invention is directed to SOI (Silicon on In5
The present invention relates to a semiconductor integrated circuit device having an ulator structure.

BACKGROUND OF THE INVENTION In recent years, SOI integrated circuits have attracted much attention because they have many features such as no latch-up and high-speed operation.

Hereinafter, with reference to the drawings, the conventional SO
A method for laser recrystallization of industrial integrated circuits will be explained.

2<- FIG. 3 shows a top view of a conventional SOI integrated circuit. 5i
In order to recrystallize the Po1y-Si film formed on 02, laser scanning 10 is performed as shown in FIG.

Problems to be Solved by the Invention However, in the conventional structure, for some reason during laser scanning in the laser recrystallization process, 5102''28i
Once scattering occurs (for example, point 0 in Figure 3), the Po1y-Si will not be recrystallized until the laser scanning stops, and the Si in the scanned area will scatter and disappear. There is a problem.

When the Si in the device region 1 is scattered and lost in the laser recrystallization process, an SOI transistor cannot be formed there, resulting in a defective integrated circuit.

In view of the above points, the present invention provides a semiconductor integrated circuit device that can prevent scattering of 81 during the laser recrystallization process.

Means for Solving the Problems In order to solve the above problems, the semiconductor integrated circuit device of the present invention has three bases of 5102 removed between the device regions to separate the Poly-Si and the Si substrates. Equipped with a Si scattering prevention band made by contact.

Effect: With this configuration, even if Si scattering occurs for some reason during the laser recrystallization step, the S1 scattering will stop as soon as the laser scan reaches the S1 scattering prevention zone.

Therefore, in subsequent laser scanning, stable recrystallization can be performed again. Therefore, the yield of semiconductor devices can be greatly improved.

EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.

FIG. 1 shows a plan view of a semiconductor integrated circuit device according to a first embodiment of the present invention. FIG. 2 shows a sectional view taken between A and A' in FIG.

In FIG. 1, an S1 anti-scattering band 2 is formed between device regions 10. As shown in Figure 2, the device area is
For example, 5i026 and P as an insulating film are formed on the Si substrate 3.
It has a structure in which o1y-3i7 is stacked. On the other hand, in the Si anti-scattering zone, 5102 is removed and Po1
The structure is such that the y-8i is brought into direct contact with the Si substrate, allowing the heat of the laser beam to easily escape toward the substrate.

Next, the principle by which scattering of 81 can be prevented by the S1 anti-scattering band in the laser recrystallization process will be described below.

When performing laser scanning (indicated by 3 in FIG. 1), if 81 scattering occurs at 9 points shown in the figure for some reason, the scattering of Sl continues after point D. However, when the laser scan comes to S1 anti-scattering zone 2, there,
Since the Po1y-Si and the S1 substrate are in contact with each other as shown in FIG. 2, the heat of the laser beam escapes to the 81 substrate. Therefore, the molten state of Sl is suppressed, and the scattering of Si is eliminated. Therefore, after point E shown in the figure, very stable recrystallization can be performed.

In this example, a recrystallization process using a laser beam was explained, but the 81 anti-scattering band of the present invention has the same effect in a recrystallization process using an electron beam or a thin melt method. be.

According to the present invention, by providing the S1 anti-scattering band, the scattering of Si can be suppressed to the minimum range, and the SO
The yield of integrated circuits can be greatly improved, and its practical effects are significant.

[Brief explanation of drawings]

FIG. 1 is a plan view of the SOI integrated circuit of the present invention, FIG. 2 is a sectional view of the S1 anti-scattering band, and FIG. 3 is a plan view of a conventional SOI integrated circuit. 1...Device area, 2...Si scattering prevention zone, 3.10.11...Laser scanning, 6.
...Si substrate, 6---SiO2, 7--
-Poly-3i. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure □ Figure 3

Claims (1)

[Claims] A plurality of insulating film regions separated from each other are formed on a substrate, a semiconductor thin film is formed on the substrate, and an element is formed in each of the semiconductor thin films on the plurality of insulating film regions. A semiconductor integrated circuit device characterized by: