JPS635559A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To enable formation of an SOI.FET and a single crystal FET at the same time on the same substrate by a method wherein the pattern of an LOCOS film is formed on the silicon substrate, a poly-silicon film is formed thereon, the poly-silicon film is recrystallized, and the recrystallized silicon film is removed excluding the part to be used as the active region of the SOI.FET. CONSTITUTION:The manufacturing process of the titled device is constructed of a process to form an LOCOS film 2 and channel stopper regions 3 on the surface of a silicon substrate 1, a process to form a poly-silicon film thereon and to recrystallize 4 the poly-silicon film thereof, a process to remove selectively the recrystallized silicon film 4 thereof according to etching, and a process to form an MOS.FET. Accordingly, are SOI (Silicon On Insulator) .FET and a single crystal FET can be formed at the same time on the same substrate l, and formation of a high speed circuit, etc. utilizing the SOI.FET can be attained.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to SOI (Silicon On In
This invention relates to a method for manufacturing a semiconductor device that can simultaneously form FICT and single crystal FKT.

Conventional technology In recent years, SO trench structure MOS) transistors have been
Because the drain is isolated from the silicon substrate,
It has attracted a lot of attention because of its many features, such as low parasitic capacitance in the source and drain, and resistance to alpha rays and light.

Problems to be Solved by the Invention However, the conventional manufacturing method is a method for manufacturing only SOI/FKT, and there is no manufacturing method for forming SOI/FET and single crystal FIT on the same substrate.

In view of the above drawbacks, the present invention provides SOI and FI on the same substrate.
The present invention provides a method for manufacturing a semiconductor device that can simultaneously form a T and a single crystal FET.

Means for Solving the Problems In order to solve the above problems, the method for manufacturing a semiconductor device of the present invention includes a step of forming a LOGO3 film and a channel stop region on the surface of a silicon substrate, and a step of forming a polysilicon film on the surface of the silicon substrate. The process consists of a process of forming a polysilicon film and recrystallizing the polysilicon, a process of selectively removing the recrystallized silicon by hair cutting, and a process of forming a MOSFET.

Function: According to this configuration, 1csOI and FI can be simultaneously installed on the same substrate.
T and single crystal FIT can be formed.

Therefore, it becomes possible to create high-speed circuits using SOX FETs.

EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings.

FIG. 1 to FIG. 4 show SOI/FIG. 4 in one embodiment of the present invention.
1 is a process cross-sectional view of a method for manufacturing a semiconductor device in which an FET and a single-crystal FIT are simultaneously formed. In FIG. 1, 1 is a Si substrate, 2 is a LOCO3 film made of SiO□, 3 is a channel stop region, 4 is recrystallized silicon,
5 is a seed region necessary for the lateral seed epitaxy technique, 7 is a single crystal FIT, and 8 is a 5OIFKT.

The steps of this example will be explained below. As shown in FIG. 1, according to the conventional LOGO5 process, a transistor region 6 and a seed region 5 are formed according to the LOGO32 pattern, and a p+ channel stop region is further formed under the L,0CO817)SiO□2 film. form 3. S of L000S film
The appropriate thickness of the iO2 film is 300° to 60° so that recrystallization in the next step can be performed stably.

Next, as shown in FIG. 2, a polysilicon film is formed to a thickness of 3000 to 5000 Å. Thereafter, the polysilicon is melted using, for example, a laser beam or an electron beam to form four recrystallized silicon films. At that time, LO
Recrystallized silicon 4 with excellent crystallinity can also be obtained on the GO3 film 2.

Next, as shown in Figure 3, the recrystallized silicon 4 is left only in the area where SOI/FX'I' will be formed using photolithography, and the other areas are removed by a silicon dry etching process. do.

Next, by making the gate electrode, source/drain, etc. in the process of making a conventional n-channel MO3FET, a single crystal FET 7 and an SOI FET 8 can be made at the same time, as shown in FIG.

Further, in this embodiment, an n-channel MoS transistor is used as an example, but it goes without saying that a p-channel MOS transistor may also be used.

Effects of the Invention As described above, the present invention enables SOI/FIT and single crystal F
Since ICT and ICT can be formed at the same time, the practical effects are great.

[Brief explanation of the drawing]

1 to 4 are process cross-sectional views of a method for manufacturing a semiconductor device according to an embodiment of the present invention. 1...Si substrate, 2...LOGO5 film, 3...channel stop region, 4...
・Recrystallized silicon, 5... Seed region, 6.
...Transistor region, 7...Single crystal M
O3) transistor, 8...SOrMOS transistor.

Claims (1)

[Claims] A step of forming a LOCOS film pattern on a silicon substrate, a step of forming polysilicon on the silicon substrate and recrystallizing the polysilicon, and the recrystallized silicon becomes an active region of an SOI/FET. A method for manufacturing a semiconductor device, comprising the steps of: removing a portion of the silicon substrate; and forming a MOS/FET on the silicon substrate.