JPS6229400B2 - - Google Patents

Info

Publication number
JPS6229400B2
JPS6229400B2 JP57148660A JP14866082A JPS6229400B2 JP S6229400 B2 JPS6229400 B2 JP S6229400B2 JP 57148660 A JP57148660 A JP 57148660A JP 14866082 A JP14866082 A JP 14866082A JP S6229400 B2 JPS6229400 B2 JP S6229400B2
Authority
JP
Japan
Prior art keywords
thin film
single crystal
crystal thin
znse
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57148660A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5939798A (ja
Inventor
Kyoshi Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP57148660A priority Critical patent/JPS5939798A/ja
Publication of JPS5939798A publication Critical patent/JPS5939798A/ja
Publication of JPS6229400B2 publication Critical patent/JPS6229400B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57148660A 1982-08-26 1982-08-26 ＺｎＳｅ単結晶薄膜の製造方法 Granted JPS5939798A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57148660A JPS5939798A (ja) 1982-08-26 1982-08-26 ＺｎＳｅ単結晶薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57148660A JPS5939798A (ja) 1982-08-26 1982-08-26 ＺｎＳｅ単結晶薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS5939798A JPS5939798A (ja) 1984-03-05
JPS6229400B2 true JPS6229400B2 (enExample) 1987-06-25

Family

ID=15457769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57148660A Granted JPS5939798A (ja) 1982-08-26 1982-08-26 ＺｎＳｅ単結晶薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS5939798A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128098U (enExample) * 1986-02-01 1987-08-13

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2625416B2 (ja) * 1985-09-30 1997-07-02 株式会社東芝 化合物半導体結晶の製造方法
JPH0719783B2 (ja) * 1986-05-20 1995-03-06 松下電器産業株式会社 結晶成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128098U (enExample) * 1986-02-01 1987-08-13

Also Published As

Publication number Publication date
JPS5939798A (ja) 1984-03-05

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