JPS6229397B2 - - Google Patents
Info
- Publication number
- JPS6229397B2 JPS6229397B2 JP56044164A JP4416481A JPS6229397B2 JP S6229397 B2 JPS6229397 B2 JP S6229397B2 JP 56044164 A JP56044164 A JP 56044164A JP 4416481 A JP4416481 A JP 4416481A JP S6229397 B2 JPS6229397 B2 JP S6229397B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- single crystal
- silicon
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4416481A JPS57160993A (en) | 1981-03-27 | 1981-03-27 | Heteroepitaxial growing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4416481A JPS57160993A (en) | 1981-03-27 | 1981-03-27 | Heteroepitaxial growing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57160993A JPS57160993A (en) | 1982-10-04 |
| JPS6229397B2 true JPS6229397B2 (enExample) | 1987-06-25 |
Family
ID=12683947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4416481A Granted JPS57160993A (en) | 1981-03-27 | 1981-03-27 | Heteroepitaxial growing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57160993A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196757A (ja) † | 1992-06-10 | 1994-07-15 | Nichia Chem Ind Ltd | 窒化インジウムガリウム半導体の成長方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4156970A (en) * | 1977-08-12 | 1979-06-05 | Hope Henry F | Apparatus for area measurement of elongated strips |
-
1981
- 1981-03-27 JP JP4416481A patent/JPS57160993A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06196757A (ja) † | 1992-06-10 | 1994-07-15 | Nichia Chem Ind Ltd | 窒化インジウムガリウム半導体の成長方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57160993A (en) | 1982-10-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5735949A (en) | Method of producing electronic, electrooptical and optical components | |
| EP0159252B1 (en) | Process for the production of semiconductor devices by using silicon-on-isolation techniques | |
| JPH01289108A (ja) | ヘテロエピタキシャル成長方法 | |
| JPH11147794A (ja) | 単結晶SiC及びその製造方法 | |
| Zorman et al. | Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon | |
| JP2009543946A (ja) | ワイドバンドギャップ半導体材料 | |
| JP4301592B2 (ja) | 窒化物半導体層付き基板の製造方法 | |
| US5205871A (en) | Monocrystalline germanium film on sapphire | |
| US5753040A (en) | Method for the growth of epitaxial metal-insulator-metal-semiconductor structures | |
| US5364468A (en) | Method for the growth of epitaxial metal-insulator-metal-semiconductor structures | |
| JP2001185487A (ja) | Iii族窒化物薄膜の形成方法 | |
| JP3657036B2 (ja) | 炭化ケイ素薄膜および炭化ケイ素薄膜積層基板の製造方法 | |
| JPS6229397B2 (enExample) | ||
| US5438951A (en) | Method of growing compound semiconductor on silicon wafer | |
| JP2024500584A (ja) | 高品質なヘテロエピタキシャル単斜晶ガリウム酸化物結晶の成長方法 | |
| JPH02139918A (ja) | ヘテロ構造体の製造方法 | |
| JPS62132312A (ja) | 半導体薄膜の製造方法 | |
| JPS6012775B2 (ja) | 異質基板上への単結晶半導体層形成方法 | |
| Grundmann et al. | Antiphase-domain-free InP on Si (001): Optimization of MOCVD process | |
| JPH0660401B2 (ja) | シリコン薄膜製造方法 | |
| JPH01149483A (ja) | 太陽電池 | |
| JP3688802B2 (ja) | Soi構造体の製造方法 | |
| JPH0216720A (ja) | 固相エピタキシヤル成長方法 | |
| JPH047819A (ja) | GaAs薄膜 | |
| JPS63224213A (ja) | 薄膜単結晶シリコン基板 |