JPS62290204A - カスケ−ド回路を含む電子回路 - Google Patents

カスケ−ド回路を含む電子回路

Info

Publication number
JPS62290204A
JPS62290204A JP61134473A JP13447386A JPS62290204A JP S62290204 A JPS62290204 A JP S62290204A JP 61134473 A JP61134473 A JP 61134473A JP 13447386 A JP13447386 A JP 13447386A JP S62290204 A JPS62290204 A JP S62290204A
Authority
JP
Japan
Prior art keywords
transistor
source
drain
circuit
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61134473A
Other languages
English (en)
Japanese (ja)
Other versions
JPH044768B2 (enExample
Inventor
Osamu Kobayashi
修 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61134473A priority Critical patent/JPS62290204A/ja
Priority to US07/057,194 priority patent/US4806877A/en
Priority to KR8705763A priority patent/KR900007276B1/ko
Priority to DE3751867T priority patent/DE3751867D1/de
Priority to EP87305036A priority patent/EP0257736B1/en
Publication of JPS62290204A publication Critical patent/JPS62290204A/ja
Publication of JPH044768B2 publication Critical patent/JPH044768B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
JP61134473A 1986-06-10 1986-06-10 カスケ−ド回路を含む電子回路 Granted JPS62290204A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61134473A JPS62290204A (ja) 1986-06-10 1986-06-10 カスケ−ド回路を含む電子回路
US07/057,194 US4806877A (en) 1986-06-10 1987-06-03 Amplifier having a cascade circuit
KR8705763A KR900007276B1 (en) 1986-06-10 1987-06-08 Amplifier having a cascade circuit
DE3751867T DE3751867D1 (de) 1986-06-10 1987-06-08 Verstärker in Kaskodeschaltung
EP87305036A EP0257736B1 (en) 1986-06-10 1987-06-08 An amplifier having a cascade circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61134473A JPS62290204A (ja) 1986-06-10 1986-06-10 カスケ−ド回路を含む電子回路

Publications (2)

Publication Number Publication Date
JPS62290204A true JPS62290204A (ja) 1987-12-17
JPH044768B2 JPH044768B2 (enExample) 1992-01-29

Family

ID=15129141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61134473A Granted JPS62290204A (ja) 1986-06-10 1986-06-10 カスケ−ド回路を含む電子回路

Country Status (5)

Country Link
US (1) US4806877A (enExample)
EP (1) EP0257736B1 (enExample)
JP (1) JPS62290204A (enExample)
KR (1) KR900007276B1 (enExample)
DE (1) DE3751867D1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000151296A (ja) * 1998-10-06 2000-05-30 Texas Instr Inc <Ti> アクティブ補償容量性の増加
JP2011059840A (ja) * 2009-09-08 2011-03-24 New Japan Radio Co Ltd カレントミラー回路
KR20170069923A (ko) * 2015-12-11 2017-06-21 에스아이아이 세미컨덕터 가부시키가이샤 증폭 회로 및 볼티지 레귤레이터

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1217373B (it) * 1988-03-28 1990-03-22 Sgs Thomson Microelectronics Stadio ad alta resistenza d'uscita in tecnologia mos,particolarmente per circuiti integrati
US4990799A (en) * 1989-12-26 1991-02-05 Weiss Frederick G Low-hysteresis regenerative comparator
JPH0454724A (ja) * 1990-06-22 1992-02-21 Sumitomo Electric Ind Ltd 論理回路
JP2022048651A (ja) * 2020-09-15 2022-03-28 株式会社東芝 半導体回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943613A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd Ｍｏｓ演算増幅器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449682A (en) * 1967-01-20 1969-06-10 Hitachi Ltd Integrated-cascode amplifier with improved frequency characteristic
JPS56655Y2 (enExample) * 1976-11-11 1981-01-09
US4284959A (en) * 1979-11-13 1981-08-18 Rca Corporation Folded-cascode amplifier arrangement with cascode load means
US4518926A (en) * 1982-12-20 1985-05-21 At&T Bell Laboratories Gate-coupled field-effect transistor pair amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943613A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd Ｍｏｓ演算増幅器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000151296A (ja) * 1998-10-06 2000-05-30 Texas Instr Inc <Ti> アクティブ補償容量性の増加
JP2011059840A (ja) * 2009-09-08 2011-03-24 New Japan Radio Co Ltd カレントミラー回路
KR20170069923A (ko) * 2015-12-11 2017-06-21 에스아이아이 세미컨덕터 가부시키가이샤 증폭 회로 및 볼티지 레귤레이터

Also Published As

Publication number Publication date
US4806877A (en) 1989-02-21
KR900007276B1 (en) 1990-10-06
DE3751867D1 (de) 1996-09-19
KR880001100A (ko) 1988-03-31
EP0257736B1 (en) 1996-08-14
JPH044768B2 (enExample) 1992-01-29
EP0257736A1 (en) 1988-03-02

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