JPS62288191A - 単結晶成長方法及びその装置 - Google Patents

単結晶成長方法及びその装置

Info

Publication number
JPS62288191A
JPS62288191A JP61132034A JP13203486A JPS62288191A JP S62288191 A JPS62288191 A JP S62288191A JP 61132034 A JP61132034 A JP 61132034A JP 13203486 A JP13203486 A JP 13203486A JP S62288191 A JPS62288191 A JP S62288191A
Authority
JP
Japan
Prior art keywords
single crystal
diameter
crystal
small diameter
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61132034A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0565477B1 (enExample
Inventor
Mitsuhiro Maruyama
光弘 丸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KYUSHU DENSHI KINZOKU KK
Original Assignee
KYUSHU DENSHI KINZOKU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KYUSHU DENSHI KINZOKU KK filed Critical KYUSHU DENSHI KINZOKU KK
Priority to JP61132034A priority Critical patent/JPS62288191A/ja
Publication of JPS62288191A publication Critical patent/JPS62288191A/ja
Publication of JPH0565477B1 publication Critical patent/JPH0565477B1/ja
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP61132034A 1986-06-06 1986-06-06 単結晶成長方法及びその装置 Expired - Lifetime JPS62288191A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61132034A JPS62288191A (ja) 1986-06-06 1986-06-06 単結晶成長方法及びその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61132034A JPS62288191A (ja) 1986-06-06 1986-06-06 単結晶成長方法及びその装置

Publications (2)

Publication Number Publication Date
JPS62288191A true JPS62288191A (ja) 1987-12-15
JPH0565477B1 JPH0565477B1 (enExample) 1993-09-17

Family

ID=15071951

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61132034A Expired - Lifetime JPS62288191A (ja) 1986-06-06 1986-06-06 単結晶成長方法及びその装置

Country Status (1)

Country Link
JP (1) JPS62288191A (enExample)

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63252991A (ja) * 1987-04-09 1988-10-20 Mitsubishi Metal Corp 落下防止保持部を有するｃｚ単結晶
JPH02267195A (ja) * 1989-04-05 1990-10-31 Nippon Steel Corp 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JPH03285893A (ja) * 1990-03-30 1991-12-17 Shin Etsu Handotai Co Ltd 結晶引上装置
US5173270A (en) * 1987-04-09 1992-12-22 Mitsubishi Materials Corporation Monocrystal rod pulled from a melt
JPH0543379A (ja) * 1991-08-19 1993-02-23 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法
US5295853A (en) * 1991-03-11 1994-03-22 Hewlett-Packard Company Mechanism for removably mounting dut board on test head
EP0834607A1 (en) * 1996-09-26 1998-04-08 Shin-Etsu Handotai Company Limited Crystal pulling method and apparatus
EP0837160A1 (en) * 1996-10-18 1998-04-22 Shin-Etsu Handotai Company Limited Crystal pulling method
EP0826796A4 (en) * 1995-04-21 1998-07-15 Shinetsu Handotai Kk PROCESS AND INSTALLATION FOR CRYSTALLOGENESIS OF SINGLE CRYSTALS
US5843229A (en) * 1995-12-27 1998-12-01 Shin-Etsu Handotai Co., Ltd. Crystal holding apparatus
EP0887443A1 (en) * 1997-06-23 1998-12-30 Shin-Etsu Handotai Company Limited Method of manufacturing a silicon monocrystal, and method of holding the same
US5871578A (en) * 1996-08-30 1999-02-16 Shin-Etsu Handotai Co., Ltd. Methods for holding and pulling single crystal
US5910216A (en) * 1996-09-18 1999-06-08 Shin-Etsu Handotai Co., Ltd. Crystal holding apparatus
US5911821A (en) * 1996-09-18 1999-06-15 Shin-Etsu Handotai Co., Ltd. Method of holding a monocrystal, and method of growing the same
US6022411A (en) * 1997-03-28 2000-02-08 Super Silicon Crystal Research Institute Corp. Single crystal pulling apparatus
US6033472A (en) * 1997-03-28 2000-03-07 Super Silicon Crystal Research Institute Corp. Semiconductor single crystal manufacturing apparatus
US6053975A (en) * 1997-03-17 2000-04-25 Shin-Etsu Handotai Co., Ltd. Crystal holding apparatus
US6077348A (en) * 1997-03-31 2000-06-20 Super Silicon Crystal Research Institute Corp. Single crystal pulling apparatus, single crystal support mechanism, and single crystal pulling method
US6130500A (en) * 1997-12-03 2000-10-10 Lg Electronics Inc. Doming effect resistant shadow mask for cathode ray tube and its fabricating method
US6197108B1 (en) 1997-05-21 2001-03-06 Shin-Etsu Handotai, Co. Ltd. Silicon seed crystal, method of manufacturing the same, and method of manufacturing silicon monocrystal through use of the seed crystal
US6315827B1 (en) 1998-10-02 2001-11-13 Komatsu Electronics Metals Co., Ltd. Apparatus for producing single crystal
US6423135B1 (en) 1999-05-18 2002-07-23 Sumitomo Metal Industries, Ltd. Method for manufacturing a single crystal
EP0940484A4 (en) * 1997-09-22 2004-06-09 Super Silicon Crystal Res Inst APPARATUS FOR DRAWING A SINGLE CRYSTAL
JP2008184374A (ja) * 2007-01-31 2008-08-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
JP2013139388A (ja) * 2013-04-08 2013-07-18 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
JP2013144641A (ja) * 2013-04-08 2013-07-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
DE19781967B3 (de) * 1996-08-30 2016-05-12 Sumitomo Mitsubishi Silicon Corp. Verfahren und Vorrichtung zum Ziehen eines Einkristalls
WO2021132136A1 (ja) * 2019-12-24 2021-07-01 株式会社Sumco シリコン単結晶の製造方法、シリコン単結晶及びシリコンウェーハ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109505004B (zh) * 2017-09-15 2021-07-13 银川隆基硅材料有限公司 一种避免拉晶过程中单晶硅棒掉落的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179096A (en) * 1981-04-28 1982-11-04 Tohoku Metal Ind Ltd Manufacture of single crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179096A (en) * 1981-04-28 1982-11-04 Tohoku Metal Ind Ltd Manufacture of single crystal

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4973518A (en) * 1987-04-09 1990-11-27 Mitsubishi Kinzoku Kabushiki Kaisha Monocrystal rod pulled from a melt
US5173270A (en) * 1987-04-09 1992-12-22 Mitsubishi Materials Corporation Monocrystal rod pulled from a melt
JPS63252991A (ja) * 1987-04-09 1988-10-20 Mitsubishi Metal Corp 落下防止保持部を有するｃｚ単結晶
JPH02267195A (ja) * 1989-04-05 1990-10-31 Nippon Steel Corp 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JPH03285893A (ja) * 1990-03-30 1991-12-17 Shin Etsu Handotai Co Ltd 結晶引上装置
US5295853A (en) * 1991-03-11 1994-03-22 Hewlett-Packard Company Mechanism for removably mounting dut board on test head
JPH0543379A (ja) * 1991-08-19 1993-02-23 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法
EP0826796A4 (en) * 1995-04-21 1998-07-15 Shinetsu Handotai Kk PROCESS AND INSTALLATION FOR CRYSTALLOGENESIS OF SINGLE CRYSTALS
US5843229A (en) * 1995-12-27 1998-12-01 Shin-Etsu Handotai Co., Ltd. Crystal holding apparatus
US5871578A (en) * 1996-08-30 1999-02-16 Shin-Etsu Handotai Co., Ltd. Methods for holding and pulling single crystal
DE19781967B3 (de) * 1996-08-30 2016-05-12 Sumitomo Mitsubishi Silicon Corp. Verfahren und Vorrichtung zum Ziehen eines Einkristalls
US5910216A (en) * 1996-09-18 1999-06-08 Shin-Etsu Handotai Co., Ltd. Crystal holding apparatus
US5911821A (en) * 1996-09-18 1999-06-15 Shin-Etsu Handotai Co., Ltd. Method of holding a monocrystal, and method of growing the same
EP0834607A1 (en) * 1996-09-26 1998-04-08 Shin-Etsu Handotai Company Limited Crystal pulling method and apparatus
US5964941A (en) * 1996-09-26 1999-10-12 Shin-Etsu Handotai., Ltd. Crystal pulling method and apparatus
EP0837160A1 (en) * 1996-10-18 1998-04-22 Shin-Etsu Handotai Company Limited Crystal pulling method
US5882397A (en) * 1996-10-18 1999-03-16 Shin Etsu Handotai Co., Ltd. Crystal pulling method
US6053975A (en) * 1997-03-17 2000-04-25 Shin-Etsu Handotai Co., Ltd. Crystal holding apparatus
US6033472A (en) * 1997-03-28 2000-03-07 Super Silicon Crystal Research Institute Corp. Semiconductor single crystal manufacturing apparatus
US6022411A (en) * 1997-03-28 2000-02-08 Super Silicon Crystal Research Institute Corp. Single crystal pulling apparatus
US6077348A (en) * 1997-03-31 2000-06-20 Super Silicon Crystal Research Institute Corp. Single crystal pulling apparatus, single crystal support mechanism, and single crystal pulling method
US6197108B1 (en) 1997-05-21 2001-03-06 Shin-Etsu Handotai, Co. Ltd. Silicon seed crystal, method of manufacturing the same, and method of manufacturing silicon monocrystal through use of the seed crystal
EP0887443A1 (en) * 1997-06-23 1998-12-30 Shin-Etsu Handotai Company Limited Method of manufacturing a silicon monocrystal, and method of holding the same
US6056818A (en) * 1997-06-23 2000-05-02 Shin-Etsu Handotai Co., Ltd. Method of manufacturing a silicon monocrystal, and method of holding the same
EP0940484A4 (en) * 1997-09-22 2004-06-09 Super Silicon Crystal Res Inst APPARATUS FOR DRAWING A SINGLE CRYSTAL
US6130500A (en) * 1997-12-03 2000-10-10 Lg Electronics Inc. Doming effect resistant shadow mask for cathode ray tube and its fabricating method
US6315827B1 (en) 1998-10-02 2001-11-13 Komatsu Electronics Metals Co., Ltd. Apparatus for producing single crystal
US6423135B1 (en) 1999-05-18 2002-07-23 Sumitomo Metal Industries, Ltd. Method for manufacturing a single crystal
JP2008184374A (ja) * 2007-01-31 2008-08-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
US9181631B2 (en) 2007-01-31 2015-11-10 Sumco Techxiv Corporation Silicon crystalline material and method for manufacturing the same
EP2112255A4 (en) * 2007-01-31 2010-12-22 Sumco Techxiv Corp CRYSTALLINE SILICON MATERIAL AND MANUFACTURING METHOD THEREFOR
JP2013139388A (ja) * 2013-04-08 2013-07-18 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
JP2013144641A (ja) * 2013-04-08 2013-07-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びその製造方法
WO2021132136A1 (ja) * 2019-12-24 2021-07-01 株式会社Sumco シリコン単結晶の製造方法、シリコン単結晶及びシリコンウェーハ
JP2021102526A (ja) * 2019-12-24 2021-07-15 株式会社Sumco シリコン単結晶の製造方法、シリコン単結晶
US12297560B2 (en) 2019-12-24 2025-05-13 Sumco Corporation Method for manufacturing monocrystalline silicon by the Czochralski process by pulling a first straight body having a first diameter and a second straight body having a second diameter larger than the first diameter

Also Published As

Publication number Publication date
JPH0565477B1 (enExample) 1993-09-17

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