JPS6228789Y2 - - Google Patents
Info
- Publication number
- JPS6228789Y2 JPS6228789Y2 JP908780U JP908780U JPS6228789Y2 JP S6228789 Y2 JPS6228789 Y2 JP S6228789Y2 JP 908780 U JP908780 U JP 908780U JP 908780 U JP908780 U JP 908780U JP S6228789 Y2 JPS6228789 Y2 JP S6228789Y2
- Authority
- JP
- Japan
- Prior art keywords
- power supply
- electrodes
- gate electrode
- junction gate
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP908780U JPS6228789Y2 (enrdf_load_stackoverflow) | 1980-01-29 | 1980-01-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP908780U JPS6228789Y2 (enrdf_load_stackoverflow) | 1980-01-29 | 1980-01-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56112955U JPS56112955U (enrdf_load_stackoverflow) | 1981-08-31 |
| JPS6228789Y2 true JPS6228789Y2 (enrdf_load_stackoverflow) | 1987-07-23 |
Family
ID=29605740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP908780U Expired JPS6228789Y2 (enrdf_load_stackoverflow) | 1980-01-29 | 1980-01-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6228789Y2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0793321B2 (ja) * | 1985-08-13 | 1995-10-09 | 松下電子工業株式会社 | 半導体装置 |
| JP5438947B2 (ja) * | 2007-11-27 | 2014-03-12 | 株式会社東芝 | 半導体装置 |
-
1980
- 1980-01-29 JP JP908780U patent/JPS6228789Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56112955U (enrdf_load_stackoverflow) | 1981-08-31 |