JPS6228518B2 - - Google Patents
Info
- Publication number
- JPS6228518B2 JPS6228518B2 JP362283A JP362283A JPS6228518B2 JP S6228518 B2 JPS6228518 B2 JP S6228518B2 JP 362283 A JP362283 A JP 362283A JP 362283 A JP362283 A JP 362283A JP S6228518 B2 JPS6228518 B2 JP S6228518B2
- Authority
- JP
- Japan
- Prior art keywords
- floating gate
- transistor
- fet
- cell
- programming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007667 floating Methods 0.000 claims description 63
- 239000003990 capacitor Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 210000004027 cell Anatomy 0.000 description 55
- 239000000463 material Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 241001459819 Carassius gibelio Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/350,530 US4486859A (en) | 1982-02-19 | 1982-02-19 | Electrically alterable read-only storage cell and method of operating same |
| US350530 | 1994-12-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58143498A JPS58143498A (ja) | 1983-08-26 |
| JPS6228518B2 true JPS6228518B2 (en, 2012) | 1987-06-20 |
Family
ID=23377116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58003622A Granted JPS58143498A (ja) | 1982-02-19 | 1983-01-14 | メモリ・アレイ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4486859A (en, 2012) |
| EP (1) | EP0087012B1 (en, 2012) |
| JP (1) | JPS58143498A (en, 2012) |
| DE (1) | DE3380330D1 (en, 2012) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4656729A (en) * | 1985-03-25 | 1987-04-14 | International Business Machines Corp. | Dual electron injection structure and process with self-limiting oxidation barrier |
| US4758988A (en) * | 1985-12-12 | 1988-07-19 | Motorola, Inc. | Dual array EEPROM for high endurance capability |
| US5153684A (en) * | 1988-10-19 | 1992-10-06 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device with offset transistor |
| US5171469A (en) * | 1989-08-22 | 1992-12-15 | Merck Patent Gesellschaft Mit Beschraenkter Haftung | Liquid-crystal matrix display |
| EP0757835A1 (en) * | 1994-04-29 | 1997-02-12 | Atmel Corporation | High-speed, non-volatile electrically programmable and erasable cell and method |
| US5581502A (en) * | 1995-05-02 | 1996-12-03 | Advanced Micro Devices, Inc. | Method for reading a non-volatile memory array |
| WO2002056316A1 (fr) * | 2001-01-12 | 2002-07-18 | Hitachi, Ltd. | Memoire remanente a semi-conducteur |
| US6721204B1 (en) * | 2003-06-17 | 2004-04-13 | Macronix International Co., Ltd. | Memory erase method and device with optimal data retention for nonvolatile memory |
| US7755941B2 (en) * | 2007-02-23 | 2010-07-13 | Panasonic Corporation | Nonvolatile semiconductor memory device |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| DE102010049503B4 (de) * | 2010-10-27 | 2012-05-31 | Texas Instruments Deutschland Gmbh | Elektronische Schaltung mit einem Transistor mit potentialfreiem Gate und Verfahren zum vorübergehenden Deaktivieren eines Transistors mit potentialfreiem Gate |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4051464A (en) * | 1975-09-08 | 1977-09-27 | Honeywell Inc. | Semiconductor memory cell |
| JPS5457875A (en) * | 1977-10-17 | 1979-05-10 | Hitachi Ltd | Semiconductor nonvolatile memory device |
| US4185319A (en) * | 1978-10-04 | 1980-01-22 | Rca Corp. | Non-volatile memory device |
| US4314265A (en) * | 1979-01-24 | 1982-02-02 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory devices with four layer electrodes |
| IT1224062B (it) * | 1979-09-28 | 1990-09-26 | Ates Componenti Elettron | Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile |
| US4434478A (en) * | 1981-11-27 | 1984-02-28 | International Business Machines Corporation | Programming floating gate devices |
-
1982
- 1982-02-19 US US06/350,530 patent/US4486859A/en not_active Expired - Lifetime
-
1983
- 1983-01-14 JP JP58003622A patent/JPS58143498A/ja active Granted
- 1983-02-01 DE DE8383100925T patent/DE3380330D1/de not_active Expired
- 1983-02-01 EP EP83100925A patent/EP0087012B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US4486859A (en) | 1984-12-04 |
| EP0087012A2 (en) | 1983-08-31 |
| EP0087012B1 (en) | 1989-08-02 |
| JPS58143498A (ja) | 1983-08-26 |
| EP0087012A3 (en) | 1986-03-05 |
| DE3380330D1 (en) | 1989-09-07 |
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