JPS62282470A - メサ形半導体装置 - Google Patents

メサ形半導体装置

Info

Publication number
JPS62282470A
JPS62282470A JP62095801A JP9580187A JPS62282470A JP S62282470 A JPS62282470 A JP S62282470A JP 62095801 A JP62095801 A JP 62095801A JP 9580187 A JP9580187 A JP 9580187A JP S62282470 A JPS62282470 A JP S62282470A
Authority
JP
Japan
Prior art keywords
semiconductor layer
mesa
type
layer
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62095801A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0461508B2 (enrdf_load_stackoverflow
Inventor
Manabu Watase
渡瀬 学
Kazuhisa Takahashi
和久 高橋
Saburo Takamiya
高宮 三郎
Shigeru Mitsui
三井 茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62095801A priority Critical patent/JPS62282470A/ja
Publication of JPS62282470A publication Critical patent/JPS62282470A/ja
Publication of JPH0461508B2 publication Critical patent/JPH0461508B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Light Receiving Elements (AREA)
JP62095801A 1987-04-17 1987-04-17 メサ形半導体装置 Granted JPS62282470A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62095801A JPS62282470A (ja) 1987-04-17 1987-04-17 メサ形半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62095801A JPS62282470A (ja) 1987-04-17 1987-04-17 メサ形半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5217377A Division JPS53137688A (en) 1977-05-07 1977-05-07 Semiconductor device of mesa type

Publications (2)

Publication Number Publication Date
JPS62282470A true JPS62282470A (ja) 1987-12-08
JPH0461508B2 JPH0461508B2 (enrdf_load_stackoverflow) 1992-10-01

Family

ID=14147535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62095801A Granted JPS62282470A (ja) 1987-04-17 1987-04-17 メサ形半導体装置

Country Status (1)

Country Link
JP (1) JPS62282470A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020213436A1 (ja) * 2019-04-18 2020-10-22 日本電信電話株式会社 受光装置および光受信器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020213436A1 (ja) * 2019-04-18 2020-10-22 日本電信電話株式会社 受光装置および光受信器
JP2020178028A (ja) * 2019-04-18 2020-10-29 日本電信電話株式会社 受光装置および光受信器
US11862739B2 (en) 2019-04-18 2024-01-02 Nippon Telegraph And Telephone Corporation Photoreceiver and optical receiver having an inclined surface

Also Published As

Publication number Publication date
JPH0461508B2 (enrdf_load_stackoverflow) 1992-10-01

Similar Documents

Publication Publication Date Title
US3970486A (en) Methods of producing a semiconductor device and a semiconductor device produced by said method
US5011788A (en) Process of manufacturing semiconductor integrated circuit device and product formed thereby
US3602982A (en) Method of manufacturing a semiconductor device and device manufactured by said method
US3954523A (en) Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation
US3524113A (en) Complementary pnp-npn transistors and fabrication method therefor
JPH10284591A (ja) 半導体装置及びその製造方法
JPH05347383A (ja) 集積回路の製法
EP0076106B1 (en) Method for producing a bipolar transistor
US4191595A (en) Method of manufacturing PN junctions in a semiconductor region to reach an isolation layer without exposing the semiconductor region surface
US3758943A (en) Method for manufacturing semiconductor device
US4032373A (en) Method of manufacturing dielectrically isolated semiconductive device
GB1356710A (en) Semiconductor resistor
US3825451A (en) Method for fabricating polycrystalline structures for integrated circuits
US4579625A (en) Method of producing a complementary semiconductor device with a dielectric isolation structure
JPS62282470A (ja) メサ形半導体装置
JP3498431B2 (ja) 半導体装置の製造方法
JPS62232142A (ja) 半酸化物分離デバイスを製作するための方法
US4977107A (en) Method for manufacturing semiconductor rectifier
JPS6244430B2 (enrdf_load_stackoverflow)
KR100320677B1 (ko) 사이리스터 소자의 제조방법
JP3264401B2 (ja) 絶縁物分離ラテラルバイポーラトランジスタの製造方法及びラテラルpnpバイポーラトランジスタ
JPS61172346A (ja) 半導体集積回路装置
JPH021937A (ja) トレンチ内にベース及びエミッタ構造を有する半導体バイポーラ・トランジスタ及びその製法
GB1224802A (en) Semiconductor device and a method of manufacturing the same
JPH01143231A (ja) 半導体装置の製造方法