JPS622781Y2 - - Google Patents
Info
- Publication number
- JPS622781Y2 JPS622781Y2 JP1984200828U JP20082884U JPS622781Y2 JP S622781 Y2 JPS622781 Y2 JP S622781Y2 JP 1984200828 U JP1984200828 U JP 1984200828U JP 20082884 U JP20082884 U JP 20082884U JP S622781 Y2 JPS622781 Y2 JP S622781Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- base
- emitter
- region
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 7
- 239000009719 polyimide resin Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984200828U JPS622781Y2 (US07714131-20100511-C00038.png) | 1984-12-26 | 1984-12-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1984200828U JPS622781Y2 (US07714131-20100511-C00038.png) | 1984-12-26 | 1984-12-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6151757U JPS6151757U (US07714131-20100511-C00038.png) | 1986-04-07 |
| JPS622781Y2 true JPS622781Y2 (US07714131-20100511-C00038.png) | 1987-01-22 |
Family
ID=30762039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1984200828U Expired JPS622781Y2 (US07714131-20100511-C00038.png) | 1984-12-26 | 1984-12-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS622781Y2 (US07714131-20100511-C00038.png) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123170A (en) * | 1976-04-09 | 1977-10-17 | Internatl Rectifier Corp Japan Ltd | Insulation method of electrodes of semiconductor elements |
-
1984
- 1984-12-26 JP JP1984200828U patent/JPS622781Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123170A (en) * | 1976-04-09 | 1977-10-17 | Internatl Rectifier Corp Japan Ltd | Insulation method of electrodes of semiconductor elements |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6151757U (US07714131-20100511-C00038.png) | 1986-04-07 |
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