JPS6227753B2 - - Google Patents

Info

Publication number
JPS6227753B2
JPS6227753B2 JP55115079A JP11507980A JPS6227753B2 JP S6227753 B2 JPS6227753 B2 JP S6227753B2 JP 55115079 A JP55115079 A JP 55115079A JP 11507980 A JP11507980 A JP 11507980A JP S6227753 B2 JPS6227753 B2 JP S6227753B2
Authority
JP
Japan
Prior art keywords
layer
ohmic contact
forming
electrode
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55115079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5739587A (en
Inventor
Masaki Fukaya
Seishiro Yoshioka
Yoshiaki Shirato
Shunichi Uzawa
Toshuki Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP55115079A priority Critical patent/JPS5739587A/ja
Publication of JPS5739587A publication Critical patent/JPS5739587A/ja
Publication of JPS6227753B2 publication Critical patent/JPS6227753B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Light Receiving Elements (AREA)
JP55115079A 1980-08-21 1980-08-21 Manufacture of photoelectric converter Granted JPS5739587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55115079A JPS5739587A (en) 1980-08-21 1980-08-21 Manufacture of photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55115079A JPS5739587A (en) 1980-08-21 1980-08-21 Manufacture of photoelectric converter

Publications (2)

Publication Number Publication Date
JPS5739587A JPS5739587A (en) 1982-03-04
JPS6227753B2 true JPS6227753B2 (enrdf_load_stackoverflow) 1987-06-16

Family

ID=14653653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55115079A Granted JPS5739587A (en) 1980-08-21 1980-08-21 Manufacture of photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5739587A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01284360A (ja) * 1988-05-12 1989-11-15 Banzai:Kk タイヤの潤滑剤塗布装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01284360A (ja) * 1988-05-12 1989-11-15 Banzai:Kk タイヤの潤滑剤塗布装置

Also Published As

Publication number Publication date
JPS5739587A (en) 1982-03-04

Similar Documents

Publication Publication Date Title
US4198263A (en) Mask for soft X-rays and method of manufacture
JPS6227753B2 (enrdf_load_stackoverflow)
US4855795A (en) Photosensor
JPS62179774A (ja) イメ−ジセンサの製造方法
JPH03248574A (ja) ポリシリコン抵抗の製造方法
JPH069246B2 (ja) 薄膜トランジスタの製造方法
JPH0763097B2 (ja) フオトセンサの作製法
JP2739582B2 (ja) 電気光学装置の製造方法
JPS62166562A (ja) イメ−ジセンサの製造方法
JPH02196470A (ja) 薄膜トランジスタとその製造方法
JPH0118585B2 (enrdf_load_stackoverflow)
US4705598A (en) Method of producing photosensor
JPS59181583A (ja) 光センサの製造方法
US4835507A (en) Photosensor array for image processing apparatus
JPS627537B2 (enrdf_load_stackoverflow)
JPS59181584A (ja) 光センサの製造方法
JPS62290171A (ja) アモルフアスシリコン等倍センサの製造方法
JP2999541B2 (ja) 光電変換素子、光センサおよびその製法
JPH0510831B2 (enrdf_load_stackoverflow)
JPS60149179A (ja) 半導体装置製造法
JPH0732244B2 (ja) フオトセンサ
JPS61229370A (ja) 光センサ素子の製造方法
KR950014269B1 (ko) 반도체 장치의 워드라인 형성방법
JPH03225967A (ja) 薄膜素子の製造方法
JPH03229462A (ja) イメージセンサ