JPS6227732B2 - - Google Patents
Info
- Publication number
- JPS6227732B2 JPS6227732B2 JP12471183A JP12471183A JPS6227732B2 JP S6227732 B2 JPS6227732 B2 JP S6227732B2 JP 12471183 A JP12471183 A JP 12471183A JP 12471183 A JP12471183 A JP 12471183A JP S6227732 B2 JPS6227732 B2 JP S6227732B2
- Authority
- JP
- Japan
- Prior art keywords
- stacking faults
- wafer
- annealing
- silicon
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 235000012431 wafers Nutrition 0.000 description 27
- 238000000034 method Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 13
- 238000000137 annealing Methods 0.000 description 12
- 239000002344 surface layer Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12471183A JPS5925231A (ja) | 1983-07-11 | 1983-07-11 | シリコンウエ−ハ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12471183A JPS5925231A (ja) | 1983-07-11 | 1983-07-11 | シリコンウエ−ハ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11770675A Division JPS6019144B2 (ja) | 1975-10-01 | 1975-10-01 | シリコンウエ−ハの製造法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5925231A JPS5925231A (ja) | 1984-02-09 |
JPS6227732B2 true JPS6227732B2 (enrdf_load_html_response) | 1987-06-16 |
Family
ID=14892210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12471183A Granted JPS5925231A (ja) | 1983-07-11 | 1983-07-11 | シリコンウエ−ハ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5925231A (enrdf_load_html_response) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020217326A1 (ja) * | 2019-04-23 | 2020-10-29 | マクセル株式会社 | ヘッドマウントディスプレイ装置 |
US11077096B2 (en) | 2003-08-29 | 2021-08-03 | Veloxis Pharmaceuticals Inc. | Modified release compositions comprising tacrolimus |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4078822B2 (ja) * | 2001-10-10 | 2008-04-23 | 株式会社Sumco | シリコンウェーハの製造方法 |
-
1983
- 1983-07-11 JP JP12471183A patent/JPS5925231A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11077096B2 (en) | 2003-08-29 | 2021-08-03 | Veloxis Pharmaceuticals Inc. | Modified release compositions comprising tacrolimus |
US11129815B2 (en) | 2003-08-29 | 2021-09-28 | Veloxis Pharmaceuticals Inc. | Solid dispersions comprising tacrolimus |
WO2020217326A1 (ja) * | 2019-04-23 | 2020-10-29 | マクセル株式会社 | ヘッドマウントディスプレイ装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5925231A (ja) | 1984-02-09 |
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