JPS622705B2 - - Google Patents
Info
- Publication number
- JPS622705B2 JPS622705B2 JP3770280A JP3770280A JPS622705B2 JP S622705 B2 JPS622705 B2 JP S622705B2 JP 3770280 A JP3770280 A JP 3770280A JP 3770280 A JP3770280 A JP 3770280A JP S622705 B2 JPS622705 B2 JP S622705B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- resistance layer
- drain
- source
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000005669 field effect Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3770280A JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
| US07/277,440 US4947232A (en) | 1980-03-22 | 1988-11-28 | High voltage MOS transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3770280A JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56133870A JPS56133870A (en) | 1981-10-20 |
| JPS622705B2 true JPS622705B2 (de) | 1987-01-21 |
Family
ID=12504852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3770280A Granted JPS56133870A (en) | 1980-03-22 | 1980-03-22 | Mos field effect semiconductor device with high breakdown voltage |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56133870A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0618251B2 (ja) * | 1983-02-23 | 1994-03-09 | 株式会社東芝 | 半導体装置 |
| US5374843A (en) * | 1991-05-06 | 1994-12-20 | Silinconix, Inc. | Lightly-doped drain MOSFET with improved breakdown characteristics |
| JPH0788141A (ja) * | 1993-06-30 | 1995-04-04 | San Beam:Kk | 回転椅子 |
-
1980
- 1980-03-22 JP JP3770280A patent/JPS56133870A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56133870A (en) | 1981-10-20 |
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