JPS6226578B2 - - Google Patents
Info
- Publication number
- JPS6226578B2 JPS6226578B2 JP56068532A JP6853281A JPS6226578B2 JP S6226578 B2 JPS6226578 B2 JP S6226578B2 JP 56068532 A JP56068532 A JP 56068532A JP 6853281 A JP6853281 A JP 6853281A JP S6226578 B2 JPS6226578 B2 JP S6226578B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- wafer
- holding member
- photoelectric
- alignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 70
- 238000001514 detection method Methods 0.000 claims description 25
- 238000012546 transfer Methods 0.000 claims description 19
- 238000010894 electron beam technology Methods 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- 229910001385 heavy metal Inorganic materials 0.000 description 11
- 238000003860 storage Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000012937 correction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 241000562569 Riodinidae Species 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000005461 Bremsstrahlung Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56068532A JPS57183034A (en) | 1981-05-07 | 1981-05-07 | Electron bean transfer device |
DE8282103628T DE3270064D1 (en) | 1981-05-07 | 1982-04-28 | Electron beam pattern transfer device and method for aligning mask and semiconductor wafer |
EP82103628A EP0065143B1 (en) | 1981-05-07 | 1982-04-28 | Electron beam pattern transfer device and method for aligning mask and semiconductor wafer |
US06/374,724 US4469949A (en) | 1981-05-07 | 1982-05-04 | Electron beam pattern transfer device and method for aligning mask and semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56068532A JPS57183034A (en) | 1981-05-07 | 1981-05-07 | Electron bean transfer device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57183034A JPS57183034A (en) | 1982-11-11 |
JPS6226578B2 true JPS6226578B2 (enrdf_load_stackoverflow) | 1987-06-09 |
Family
ID=13376433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56068532A Granted JPS57183034A (en) | 1981-05-07 | 1981-05-07 | Electron bean transfer device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4469949A (enrdf_load_stackoverflow) |
EP (1) | EP0065143B1 (enrdf_load_stackoverflow) |
JP (1) | JPS57183034A (enrdf_load_stackoverflow) |
DE (1) | DE3270064D1 (enrdf_load_stackoverflow) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4572956A (en) * | 1982-08-31 | 1986-02-25 | Tokyo Shibaura Denki Kabushiki Kaisha | Electron beam pattern transfer system having an autofocusing mechanism |
JPS59220922A (ja) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | 位置合わせ方法 |
GB2155201B (en) * | 1984-02-24 | 1988-07-13 | Canon Kk | An x-ray exposure apparatus |
GB2157069A (en) * | 1984-04-02 | 1985-10-16 | Philips Electronic Associated | Step and repeat electron image projector |
US4749867A (en) * | 1985-04-30 | 1988-06-07 | Canon Kabushiki Kaisha | Exposure apparatus |
US4861162A (en) * | 1985-05-16 | 1989-08-29 | Canon Kabushiki Kaisha | Alignment of an object |
US5029222A (en) * | 1987-09-02 | 1991-07-02 | Fujitsu Limited | Photoelectron image projection apparatus |
US4928018A (en) * | 1989-06-29 | 1990-05-22 | Texas Instruments, Incorporated | Thermo-enhanced electron image projector |
JPH07263308A (ja) * | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | 電子ビーム露光方法及び装置 |
JPH09320931A (ja) * | 1996-05-28 | 1997-12-12 | Nikon Corp | 結像特性計測方法及び該方法を使用する転写装置 |
JP2000003847A (ja) * | 1998-06-15 | 2000-01-07 | Canon Inc | 荷電粒子線縮小転写装置及びデバイス製造方法 |
US6437347B1 (en) | 1999-04-13 | 2002-08-20 | International Business Machines Corporation | Target locking system for electron beam lithography |
JP3805565B2 (ja) * | 1999-06-11 | 2006-08-02 | 株式会社日立製作所 | 電子線画像に基づく検査または計測方法およびその装置 |
US6952255B2 (en) | 2003-08-06 | 2005-10-04 | Lam Research Corporation | System and method for integrated multi-use optical alignment |
JP6200224B2 (ja) * | 2012-09-13 | 2017-09-20 | 日本メクトロン株式会社 | フォトマスク、フォトマスク組、露光装置および露光方法 |
US9984943B2 (en) * | 2016-05-16 | 2018-05-29 | Massachusetts Institute Of Technology | Systems and methods for aligning and coupling semiconductor structures |
EP3706262B1 (en) * | 2019-02-15 | 2022-01-26 | Nichia Corporation | Method of manufacturing light emitting device, light emitting device, and base member |
US20250183074A1 (en) * | 2023-12-01 | 2025-06-05 | Applied Materials, Inc. | Sensor substrate and integrated sensing surfaces |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1533755A (fr) * | 1966-08-16 | 1968-07-19 | Jeol Ltd | Dispositif pour le réglage du point de traitement dans un appareil à faisceau électrique ou analogue |
US3679497A (en) * | 1969-10-24 | 1972-07-25 | Westinghouse Electric Corp | Electron beam fabrication system and process for use thereof |
US3710101A (en) * | 1970-10-06 | 1973-01-09 | Westinghouse Electric Corp | Apparatus and method for alignment of members to electron beams |
US3683195A (en) * | 1971-03-22 | 1972-08-08 | Kasper Instruments | Apparatus for the automatic alignment of two superimposed objects,e.g. a semiconductor wafer and mask |
US3745358A (en) * | 1971-05-10 | 1973-07-10 | Radiant Energy Systems | Alignment method and apparatus for electron projection systems |
FR2146106B1 (enrdf_load_stackoverflow) * | 1971-07-16 | 1977-08-05 | Thomson Csf | |
DE2722958A1 (de) * | 1977-05-20 | 1978-11-23 | Siemens Ag | Verfahren zur justierung einer halbleiterscheibe relativ zu einer bestrahlungsmaske bei der roentgenstrahl-fotolithografie |
US4335313A (en) * | 1980-05-12 | 1982-06-15 | The Perkin-Elmer Corporation | Method and apparatus for aligning an opaque mask with an integrated circuit wafer |
-
1981
- 1981-05-07 JP JP56068532A patent/JPS57183034A/ja active Granted
-
1982
- 1982-04-28 EP EP82103628A patent/EP0065143B1/en not_active Expired
- 1982-04-28 DE DE8282103628T patent/DE3270064D1/de not_active Expired
- 1982-05-04 US US06/374,724 patent/US4469949A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0065143A2 (en) | 1982-11-24 |
EP0065143B1 (en) | 1986-03-26 |
DE3270064D1 (en) | 1986-04-30 |
EP0065143A3 (en) | 1983-11-09 |
US4469949A (en) | 1984-09-04 |
JPS57183034A (en) | 1982-11-11 |
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