JPS6226572B2 - - Google Patents
Info
- Publication number
- JPS6226572B2 JPS6226572B2 JP55140476A JP14047680A JPS6226572B2 JP S6226572 B2 JPS6226572 B2 JP S6226572B2 JP 55140476 A JP55140476 A JP 55140476A JP 14047680 A JP14047680 A JP 14047680A JP S6226572 B2 JPS6226572 B2 JP S6226572B2
- Authority
- JP
- Japan
- Prior art keywords
- flash discharge
- annealing
- semiconductor wafer
- discharge lamp
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 30
- 238000000137 annealing Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14047680A JPS5764937A (en) | 1980-10-09 | 1980-10-09 | Annealing device |
DE19813139712 DE3139712C2 (de) | 1980-10-09 | 1981-10-06 | Glüheinrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14047680A JPS5764937A (en) | 1980-10-09 | 1980-10-09 | Annealing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5764937A JPS5764937A (en) | 1982-04-20 |
JPS6226572B2 true JPS6226572B2 (de) | 1987-06-09 |
Family
ID=15269487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14047680A Granted JPS5764937A (en) | 1980-10-09 | 1980-10-09 | Annealing device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5764937A (de) |
DE (1) | DE3139712C2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0618668U (ja) * | 1992-03-27 | 1994-03-11 | 吉則 高田 | 油圧の圧力流量変換器 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS593934A (ja) * | 1982-06-30 | 1984-01-10 | Ushio Inc | 半導体ウエハ−を光照射で加熱する方法 |
JPS593933A (ja) * | 1982-06-30 | 1984-01-10 | Ushio Inc | 半導体ウエハ−を光照射で加熱する方法 |
JPS59177937U (ja) * | 1983-05-16 | 1984-11-28 | 富士通株式会社 | 赤外線熱処理装置 |
JPS6049625U (ja) * | 1983-09-13 | 1985-04-08 | ニチデン機械株式会社 | 赤外線加熱装置 |
US4560420A (en) * | 1984-06-13 | 1985-12-24 | At&T Technologies, Inc. | Method for reducing temperature variations across a semiconductor wafer during heating |
US4981815A (en) * | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
DE4109956A1 (de) * | 1991-03-26 | 1992-10-01 | Siemens Ag | Verfahren zum kurzzeittempern einer halbleiterscheibe durch bestrahlung |
JP2006261695A (ja) * | 2006-05-22 | 2006-09-28 | Toshiba Corp | 半導体装置の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4824179U (de) * | 1971-07-29 | 1973-03-20 | ||
JPS5334302B2 (de) * | 1972-02-20 | 1978-09-20 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5715814Y2 (de) * | 1976-08-26 | 1982-04-02 | ||
JPS5575224A (en) | 1978-12-01 | 1980-06-06 | Ushio Inc | Annealing furnace |
JPS5750427A (en) * | 1980-09-12 | 1982-03-24 | Ushio Inc | Annealing device and annealing method |
-
1980
- 1980-10-09 JP JP14047680A patent/JPS5764937A/ja active Granted
-
1981
- 1981-10-06 DE DE19813139712 patent/DE3139712C2/de not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4824179U (de) * | 1971-07-29 | 1973-03-20 | ||
JPS5334302B2 (de) * | 1972-02-20 | 1978-09-20 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0618668U (ja) * | 1992-03-27 | 1994-03-11 | 吉則 高田 | 油圧の圧力流量変換器 |
Also Published As
Publication number | Publication date |
---|---|
JPS5764937A (en) | 1982-04-20 |
DE3139712A1 (de) | 1982-05-13 |
DE3139712C2 (de) | 1984-10-18 |
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