JPS5764937A - Annealing device - Google Patents

Annealing device

Info

Publication number
JPS5764937A
JPS5764937A JP14047680A JP14047680A JPS5764937A JP S5764937 A JPS5764937 A JP S5764937A JP 14047680 A JP14047680 A JP 14047680A JP 14047680 A JP14047680 A JP 14047680A JP S5764937 A JPS5764937 A JP S5764937A
Authority
JP
Japan
Prior art keywords
wafer
mirror
lamps
discharge lamps
surround
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14047680A
Other languages
English (en)
Other versions
JPS6226572B2 (ja
Inventor
Tatsumi Hiramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP14047680A priority Critical patent/JPS5764937A/ja
Priority to DE19813139712 priority patent/DE3139712C2/de
Publication of JPS5764937A publication Critical patent/JPS5764937A/ja
Publication of JPS6226572B2 publication Critical patent/JPS6226572B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP14047680A 1980-10-09 1980-10-09 Annealing device Granted JPS5764937A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14047680A JPS5764937A (en) 1980-10-09 1980-10-09 Annealing device
DE19813139712 DE3139712C2 (de) 1980-10-09 1981-10-06 Glüheinrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14047680A JPS5764937A (en) 1980-10-09 1980-10-09 Annealing device

Publications (2)

Publication Number Publication Date
JPS5764937A true JPS5764937A (en) 1982-04-20
JPS6226572B2 JPS6226572B2 (ja) 1987-06-09

Family

ID=15269487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14047680A Granted JPS5764937A (en) 1980-10-09 1980-10-09 Annealing device

Country Status (2)

Country Link
JP (1) JPS5764937A (ja)
DE (1) DE3139712C2 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593934A (ja) * 1982-06-30 1984-01-10 Ushio Inc 半導体ウエハ−を光照射で加熱する方法
JPS593933A (ja) * 1982-06-30 1984-01-10 Ushio Inc 半導体ウエハ−を光照射で加熱する方法
JPS59177937U (ja) * 1983-05-16 1984-11-28 富士通株式会社 赤外線熱処理装置
JPS6049625U (ja) * 1983-09-13 1985-04-08 ニチデン機械株式会社 赤外線加熱装置
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
JPH01319934A (ja) * 1988-05-09 1989-12-26 Siemens Ag 電磁放射照射による半導体円板の急速熱処理方法
JP2006261695A (ja) * 2006-05-22 2006-09-28 Toshiba Corp 半導体装置の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4109956A1 (de) * 1991-03-26 1992-10-01 Siemens Ag Verfahren zum kurzzeittempern einer halbleiterscheibe durch bestrahlung
JPH0618668U (ja) * 1992-03-27 1994-03-11 吉則 高田 油圧の圧力流量変換器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4824179U (ja) * 1971-07-29 1973-03-20
JPS5334302U (ja) * 1976-08-26 1978-03-25

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217216B2 (ja) * 1972-02-20 1977-05-13
JPS5575224A (en) 1978-12-01 1980-06-06 Ushio Inc Annealing furnace
JPS5750427A (en) * 1980-09-12 1982-03-24 Ushio Inc Annealing device and annealing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4824179U (ja) * 1971-07-29 1973-03-20
JPS5334302U (ja) * 1976-08-26 1978-03-25

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593934A (ja) * 1982-06-30 1984-01-10 Ushio Inc 半導体ウエハ−を光照射で加熱する方法
JPS593933A (ja) * 1982-06-30 1984-01-10 Ushio Inc 半導体ウエハ−を光照射で加熱する方法
JPS6331095B2 (ja) * 1982-06-30 1988-06-22 Ushio Electric Inc
JPS6331093B2 (ja) * 1982-06-30 1988-06-22 Ushio Electric Inc
JPS59177937U (ja) * 1983-05-16 1984-11-28 富士通株式会社 赤外線熱処理装置
JPS6049625U (ja) * 1983-09-13 1985-04-08 ニチデン機械株式会社 赤外線加熱装置
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
JPH01319934A (ja) * 1988-05-09 1989-12-26 Siemens Ag 電磁放射照射による半導体円板の急速熱処理方法
JP2006261695A (ja) * 2006-05-22 2006-09-28 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6226572B2 (ja) 1987-06-09
DE3139712A1 (de) 1982-05-13
DE3139712C2 (de) 1984-10-18

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