JPS62260375A - Hall element and manufacture thereof - Google Patents

Abstract

PURPOSE:To prevent the cleavage of the peripheral section of a unit mica board, which is bonded with a unit element substrate, such as a ferrite board, a ceramic board, etc. and to which a Hall element pattern is formed, to increase mechanical strength and to obtain a Hall element having a high Hall effect by fusing the peripheral section of the unit mica board through laser scribing. CONSTITUTION:A Hall element pattern 6 consisting of a unit element substrate 1, a semiconductor thin-film 4 bonded onto the unit element substrate 1 and electrodes 5 is shaped, and a Hall element has a unit mica board 3 with a peripheral section 7 fused through laser scribing. A mica substrate 3a on which a large number of Hall element patterns 6 composed of the semiconductor thin-films 4 and the electrodes 5 are formed is bonded onto an element substrate la, and the mica substrate 3a is fused through laser scribing at every Hall element unit using one Hall element pattern 6 as a unit while divisible kerfs 10 are shaped to the element substrate la, thus manufacturing Hall elements. Accordingly, fusing sections in the mica substrate are heat-sealed to prevent cleavage while being welded to adhesive layers and the element substrates by fusing and being unified, thus increasing mechanical strength.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a Hall element using laser scribing to cut a mica substrate and a method for manufacturing the same.

(Prior art) In5biF for Hall elements! As a substrate on which the film is deposited,
Mica substrates are often used, but as is well known, mica is extremely fragile and has significantly inferior mechanical strength in the direction perpendicular to the surface. Therefore, it is not preferable to leave mica as it is in the Hall element product, so there is a method in which the deposited InSb thin film is transferred onto a ferrite plate or ceramic plate by a transfer method and the mica substrate is removed, or it is used as a thermal bonding substrate. A method has been adopted in which mica is not used, and the material is deposited directly on a ferrite plate or ceramic plate, or on a surface of which SiO or the like has been previously deposited.

However, when a substrate other than mica is used, the electron mobility, which is important for the performance of the InSb vapor-deposited thin film, especially the performance of the Hall element, is extremely low compared to when mica is used as the substrate, and the Hall output voltage is extremely low. It is practically disadvantageous. On the other hand, even when deposited on a mica substrate, the electron mobility of the double-deposited In5b7a film is very high (
μ > 40.000o+f /V, S ) is highly crystalline and has a high degree of adhesion to the mica substrate, so mica flakes tend to remain on the InSb thin film surface when transferred to a ferrite plate or ceramic plate. Practically μ≦40.000c!
It is manufactured under conditions that keep it to i/V, S.

(Problems to be Solved by the Invention) As described above, when a substrate other than mica is used, the electron mobility of the deposited In5bi film is extremely low, and even when mica is used, the electron mobility of the In5bi film with high electron mobility is Films are difficult to use because they are difficult to transfer.

On the other hand, if a mechanical method (dicing saw) is used to cut out individual elements after adhering a mica substrate on which an In5biJ film has been deposited to a ferrite plate or ceramic plate, the mica will easily open up and scatter, resulting in no damage. I couldn't cut it off as it was.

The present invention provides a Hall element with a high Hall effect by preventing damage to the peripheral edge of a unit mica plate bonded to a unit element substrate such as a ferrite plate or a ceramic plate and forming a Hall element pattern, thereby improving mechanical strength. This is what I am trying to do.

Furthermore, the present invention cuts the mica substrate bonded onto the element substrate without creating folds or damaging the Hall element pattern for each Hall element, and further divides the element substrate at the same time as cutting the mica substrate. The purpose of this invention is to provide a method for manufacturing a Hall element that makes it possible.

[Structure of the invention]

(Means for Solving the Problems) The present invention has a unit element substrate, a Hall element pattern made of a semiconductor thin film and an electrode bonded on the intermediate element substrate, and a peripheral portion which is cut by laser scribing. Unit mica plate 1 has a unit mica plate having a unit element substrate, and the peripheral edge of the plate is melt-sealed by laser scribing to prevent the mechanical strength of the unit mica plate from being opened. By leaving it as is, it is possible to use a semiconductor thin film with high electron mobility and improve the Hall effect.

(Function) Next, the present invention adheres a mica substrate on which a large number of Hall element patterns each consisting of a semiconductor thin film and an electrode are formed on an element substrate, and attaches this mica substrate to a hole in which each Hall element pattern is a unit. By fusing each element by laser scribing, the fusing edges of the mica substrate are melt-sealed, preventing creases, increasing the mechanical strength of the mica substrate, and at the same time forming divisible grooves in the element substrate. There is no need to separately form a dividing groove on the element substrate, and the opening edge of this groove and the fusing edge of the mica substrate are welded together, making it possible to further improve the mechanical strength of the cloud l1f1 substrate. Furthermore, since the width of the cut groove can be made sufficiently narrow by laser scribing, the Hall element pattern will not be damaged.

(Example) An example of the Hall element of the present invention will be described with reference to FIGS. 1 and 2.

Reference numeral 1 designates a unit element substrate, such as a ceramic plate or a ferrite (formerly -H type, about 300 sheets thick) plate.A unit mica plate 3 is bonded onto this unit element substrate 1 by an adhesive layer 2, and this unit A semiconductor thin film 4 made of an InSb thin film is formed in a cross pattern on the mica plate 3, and an ^i electrode 5 is formed by vapor deposition on the semiconductor IPAJ, and the semiconductor thin film 4 and the electrode 5 constitute a Hall element pattern 6. ing. Additionally, the peripheral edge 7 of the single (37 mica plate 3) is cut and melt-sealed by laser scribing, which is used to divide a large number of Hall element patterns 6 previously formed on a large mica substrate into units, and the unit element substrate 1 is melt-sealed. Rim 8
is heat welded.

Although not shown, if the unit element substrate 1 is a magnetic material such as a ferrite plate, a second ferrite plate is bonded onto the semiconductor thin film 4, and the electric current 1! Lead wires are connected to i5, respectively.

In this embodiment, the peripheral edge 7 of the unit mica plate 3 is melt-sealed because it is cut by laser scribing used for division, so that the gap between the folds of the peripheral edge 7 of the base plate 3 is prevented between the blades, and the gap between the blades is increased. There was no damage, and thermal fusion occurred between the unit mica plate 3 and the unit element substrate 1, resulting in peeling.
prevent.

Next, an example of the manufacturing method of the present invention will be explained with reference to FIGS. 3 to 6.

■ In Figures 3 and 4, 38 is the Yuki I11 board,
Using a thick untreated muscovite, an In5bii7 film is grown on the mica substrate 3a by a conventional method to form a cross pattern of the semiconductor thin film 4. Average electron transfer on the film surface of semiconductor film 4! 1! The IJ degree was 46.0OOci/V,S. This is formed into a one-letter pattern as shown in FIG. 3 by ordinary photolithography, and after masking, an AI electrode 5 is formed by vapor deposition. Next, a mica substrate 3a on which a large number of Hall element patterns 6 made up of semiconductor thin films 4 and electrodes 5 are formed is bonded onto the element substrate 1a via an adhesive layer 2 spin-coded with an epoxy fluid adhesive. The element substrate 1a is a ceramic plate or a ferrite plate (Ni-Zn
system) etc. are used.

(2) Next, as shown in FIG. 5, a resist is coated as a protective film so as to cover the mica substrate 3a as well as the Hall element pattern 6. This protective film 9 prevents cutting debris from falling on the Hall element pattern 6 and contaminating it during the next laser scribing.

[Phase] Next, as shown in FIG. 6, laser scribing is performed on the protective film 9 at the positions of the chains and lines shown in FIG. 3a is melt-cut into unit mica plates 3, and a groove 10 is cut halfway through the thickness of the element substrate 1.

Then, the peripheral edge 7 of the unit mica plate 3 cut by laser scribing is melt-sealed, and the peripheral edge 7 of the unit mica plate 3, the adhesive layer 2, and the element substrate 1a are sealed.

The fusing edge 8 of the cut groove 10 is melted, cooled, solidified, and integrated. The peel strength between the element substrate 1a and the unit mica plate 3 is 30 g/
It was 1IIvA or higher. In addition, the groove 1 of the element substrate 1a
The depth of 0 is about 40% of the thickness of the element substrate 1a, and the element substrate 1a can be manually divided into unit element substrates 1 from the grooves 10. Also, the maximum diameter of kerf 10 was 80.

Next, the element substrate 1a is cut along the kerf 10 and divided into chip-shaped ψ-position element substrates. Next, the protective film 9 on the surface is removed by cleaning with an organic solvent such as acetone, and the unit mica plate 3, the semiconductor thin film 4, and the electrode 5 are exposed.
A chip piece 11 shown in the figure is obtained. After removing the protective film 9, the unit mica plate 3, semiconductor thin film 4, and electrode 5 were all intact.

Although not shown, a second ferrite plate is bonded onto the semiconductor thin film 4, and a lead wire is connected to the electrode 5.

〔Effect of the invention〕

According to the present invention, there is provided a unit element substrate, and a unit mica plate which is bonded onto the unit element substrate and has a peripheral edge portion formed with a Hall element pattern consisting of a semiconductor thin film and an electrode and fused by laser flying. However, the peripheral edge of the unit mica plate is melt-cut and sealed by laser scribing, which prevents creases and increases mechanical strength. Since it can remain in the semiconductor film, the electron mobility of the semiconductor film can be increased and the Hall effect can be improved.

In addition, it is possible to simplify manufacturing by eliminating the trouble of transferring the semiconductor thin film onto the element substrate.

Further, according to the present invention, a mica substrate on which a large number of Hall element patterns made of semiconductor thin films and electrodes are formed is adhered onto an element substrate, and this mica substrate is attached to a Hall element type ( D, Fx is fused by laser scribing, and at the same time a cut groove that can be divided is formed on the element substrate, so the fused part of the mica substrate is fused and prevented from being damaged, and the fused adhesive layer and element substrate are The device substrate can be welded and integrated to increase its mechanical strength.Also, since a dividing groove is formed on the element substrate by laser scribing at the same time as the mica substrate is melted, it is possible to form a separate groove on the element substrate. It saves labor and simplifies the manufacturing process.Furthermore, since it is fused by laser scribing, the width of the fused part can be narrowed and the width of minute gouges can be narrowed, which can damage the Hall element pattern. There is no such fear.

[Brief explanation of drawings]

Fig. 1 is a front view of the Hall element at t11 showing an example of an actual droplet of the present invention, Fig. 2 is a plan view of the same as above, and Figs. 3 to 5 are process explanatory diagrams showing an embodiment of the method of the present invention. Figure 3 is a plan view of a mica substrate with a Hall element pattern bonded onto an element substrate, Figure 4 is a top view of A-AI as above, Figure 5 is a cross-sectional view after forming a protective film, and Figure 6 is a FIG. 3 is a cross-sectional view after laser scribing. DESCRIPTION OF SYMBOLS 1... Unit element substrate, 1a... Element substrate, 3... Unit mica plate, 3a... Mica substrate, 4... Semiconductor thin film, 5... Electrode, 6... Hall element pattern, 7... Peripheral part, 10・
- Cut groove. Written amendment to the Sagi Poshi procedure (voluntary) June 5, 1985 Michibe Uga, Commissioner of the Patent Office 1, Indication of the case ■I
Showa 6 2, Name of the invention Hall element and its manufacturing method 3, Relationship with the amended person case Patent applicant Core Co., Ltd. 4 Agent 4-3-22 Shinjuku, Shinjuku-ku, Tokyo @ (Ando Building) 5. Date of amendment order None 6. Subject of amendment Column 7 of "Detailed description of the invention" in the statement of intent, Contents of amendment (1) "Performance and "Important" should be corrected to "Important in terms of performance." (2) In lines 4 and 5 of page A of the specification box, the statement [Mica plate, thick and untreated] should be corrected to read 'Mica plate, thin and untreated.' (3) On page 8, line 15 of the specification, it says “in depth”,
"The depth is," he corrected. 4) In page 9, line 18 of the specification, the phrase "may remain" should be corrected to "may remain."

Claims (2)

[Claims] (1) It is characterized by comprising a unit element substrate, and a unit mica plate which is bonded onto the unit element substrate and has a peripheral edge portion formed with a Hall element pattern consisting of a semiconductor thin film and an electrode and melted by laser scribing. Hall element. (2) A mica substrate on which a large number of Hall element patterns made of semiconductor thin films and electrodes are formed is bonded onto the element substrate, and this mica substrate is laser scribed for each Hall element, with each Hall element pattern as a unit. 1. A method for manufacturing a Hall element, characterized in that a cut groove that can be divided into parts is formed in the element substrate at the same time as cutting by fusing.