JPS62257741A - Inspection device for surface of semiconductor substrate - Google Patents
Inspection device for surface of semiconductor substrateInfo
- Publication number
- JPS62257741A JPS62257741A JP10137986A JP10137986A JPS62257741A JP S62257741 A JPS62257741 A JP S62257741A JP 10137986 A JP10137986 A JP 10137986A JP 10137986 A JP10137986 A JP 10137986A JP S62257741 A JPS62257741 A JP S62257741A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- laser beams
- inspection device
- concave mirror
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000007689 inspection Methods 0.000 title claims abstract description 10
- 239000000126 substance Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 230000001788 irregular Effects 0.000 abstract 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野Ｊ
本発明は半導体基板表面検査装置に保り、特に半導体基
板表面上における異物を検知する装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application J] The present invention relates to a semiconductor substrate surface inspection apparatus, and particularly to an apparatus for detecting foreign matter on a semiconductor substrate surface.
（従来の技術〕
従来、半導体基板表面上における異物検査ｇｃ置では、
レーザ光全半導体基板表面に照射して、異物が存在する
場合に生じる乱反射レーザ光を元ファイバ・ケーブルで
とらえ、それ’ｔｔ気信号に変換して、その出力を測定
することにより、半導体基板表面上の異物を検知してい
た。(Prior art) Conventionally, in a gc system for inspecting foreign substances on the surface of a semiconductor substrate,
By irradiating the entire semiconductor substrate surface with laser light and capturing the diffusely reflected laser light that occurs when foreign matter is present with the original fiber cable, converting it into a signal and measuring the output, it is possible to detect the surface of the semiconductor substrate. A foreign object was detected on top.
〔発明が解決しようとする問題点ｊ
ところが、前述の検知装置においては、半導体基板表面
からの乱反射レーザ光のわずかの部分しかとらえること
ができない為、検知感度が低いという欠点があった。[Problems to be Solved by the Invention j] However, the above-mentioned detection device has the drawback of low detection sensitivity because it can capture only a small portion of the diffusely reflected laser light from the surface of the semiconductor substrate.
本発明の目的は、前記欠点全解消して、大部分の乱反射
レーザ光を捕えて、検知感度を高めるようにした半導体
基板表面検査装ｆｉｔを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor substrate surface inspection device FIT which eliminates all of the above-mentioned drawbacks, captures most of the diffusely reflected laser light, and increases detection sensitivity.
本発明の構成は、半導体基板表面にレーザ光を当てて反
射した乱反射レーザ光を電気侶号に変換して、前記半導
体基板表面の形状および異物の有無の検知全行う半導体
基板表面検査装置において、前記乱反射レーザｆｔを集
光させるように、凹面鋭全設けたこと全特徴とする。The structure of the present invention is a semiconductor substrate surface inspection apparatus that detects the shape of the semiconductor substrate surface and the presence or absence of foreign matter by converting the diffusely reflected laser beam reflected by applying a laser beam to the semiconductor substrate surface into an electric signal. The main feature is that a sharp concave surface is provided so as to condense the diffusely reflected laser ft.
〔実施例Ｊ 次に本発明について図面を参照して詳細に説明する。[Example J Next, the present invention will be explained in detail with reference to the drawings.
第１図は本発明の一実施例の半導体基板表面検査装置を
示す模式図である。同図に示すように、入射レーザー″
ｙｔ１が半導体基板３に当り反射された乱反射レーザ光
４は、凹面鏡２を介して、フォトマル５に集光させる。FIG. 1 is a schematic diagram showing a semiconductor substrate surface inspection apparatus according to an embodiment of the present invention. As shown in the figure, the incident laser
The diffusely reflected laser beam 4 that is reflected by the yt1 hitting the semiconductor substrate 3 is focused on the photomultiplex 5 via the concave mirror 2.
このフォトマルチプライヤ５にて、凹面使２で集光嘔れ
たレーザ光を検知し、半導体基＆３の表面の異物の有無
や形状異常等を検出する。This photomultiplier 5 detects the laser beam focused by the concave surface 2, and detects the presence or absence of foreign matter, abnormal shape, etc. on the surface of the semiconductor substrate &3.
〔発明の効果Ｊ
以上説明し友ように、本発明によれは、凹面鏡にて乱反
射レーザー元を集元することにより、大部分の乱反射レ
ーザー光がとらえられる為、検知感度を高くでさるとい
う効果が得られる。[Effect of the invention J As explained above, the present invention has the effect of increasing the detection sensitivity because most of the diffusely reflected laser light is captured by concentrating the diffusely reflected laser source with a concave mirror. is obtained.
第１図は不発明の一実施例の半導体基板表面検査装置の
光学系概説図である。
１・・・入射レーザ光、２・・・凹面鏡、３・・半導体
基板、４・・・乱反射レーザ光、５・・・フォトマルチ
プライヤ。FIG. 1 is a schematic diagram of an optical system of a semiconductor substrate surface inspection apparatus according to an embodiment of the invention. DESCRIPTION OF SYMBOLS 1... Incident laser beam, 2... Concave mirror, 3... Semiconductor substrate, 4... Diffuse reflected laser beam, 5... Photo multiplier.
Claims (1)
ーザ光を電気信号に変換して、前記半導体基板表面の形
状および異物の有無の検知を行う半導体基板表面検査装
置において、前記乱反射レーザ光を集光させるように、
凹面鏡を設けたことを特徴とする半導体基板表面検査装
置。In a semiconductor substrate surface inspection device that detects the shape of the surface of the semiconductor substrate and the presence or absence of foreign substances by applying a laser beam to the surface of the semiconductor substrate and converting the reflected diffusely reflected laser beam into an electrical signal, the diffusely reflected laser beam is focused. as if to let
A semiconductor substrate surface inspection device characterized by being provided with a concave mirror.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10137986A JPS62257741A (en) | 1986-04-30 | 1986-04-30 | Inspection device for surface of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10137986A JPS62257741A (en) | 1986-04-30 | 1986-04-30 | Inspection device for surface of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62257741A true JPS62257741A (en) | 1987-11-10 |
Family
ID=14299155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10137986A Pending JPS62257741A (en) | 1986-04-30 | 1986-04-30 | Inspection device for surface of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62257741A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02223845A (en) * | 1989-02-23 | 1990-09-06 | Mikakutou Seimitsu Kogaku Kenkyusho:Kk | Method and device for measuring particle size of extremely small particle by light scattering method |
-
1986
- 1986-04-30 JP JP10137986A patent/JPS62257741A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02223845A (en) * | 1989-02-23 | 1990-09-06 | Mikakutou Seimitsu Kogaku Kenkyusho:Kk | Method and device for measuring particle size of extremely small particle by light scattering method |
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