JPS63208747A - Optical inspecting device - Google Patents

Optical inspecting device

Info

Publication number
JPS63208747A
JPS63208747A JP62042004A JP4200487A JPS63208747A JP S63208747 A JPS63208747 A JP S63208747A JP 62042004 A JP62042004 A JP 62042004A JP 4200487 A JP4200487 A JP 4200487A JP S63208747 A JPS63208747 A JP S63208747A
Authority
JP
Japan
Prior art keywords
light
focus
scattered light
photodetector
reflecting mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62042004A
Other languages
Japanese (ja)
Other versions
JPH0676970B2 (en
Inventor
Susumu Tanaka
進 田中
Katsumi Ishii
勝美 石井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TERU SAAMUKO KK
Tokyo Electron Sagami Ltd
Original Assignee
TERU SAAMUKO KK
Tokyo Electron Sagami Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TERU SAAMUKO KK, Tokyo Electron Sagami Ltd filed Critical TERU SAAMUKO KK
Priority to JP62042004A priority Critical patent/JPH0676970B2/en
Priority to KR1019880001928A priority patent/KR970000709B1/en
Publication of JPS63208747A publication Critical patent/JPS63208747A/en
Publication of JPH0676970B2 publication Critical patent/JPH0676970B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To converge scattered light efficiently and to evade the detection of unnecessary light by allowing to inspection light to impinge on the 1st focus of a body to be inspected and condensing the scattered light from a 1st focus part by a reflecting mirror. CONSTITUTION:The 1st focus P1 is formed on the inspection surface of a wafer 2 at its top surface side, and an elliptic reflector 28 as the reflecting mirror which forms a 2nd focus P2 at the side of a photodetector 6 as a photodetecting means is installed. This beam-shaped laser light 36 emitted by a laser light source 6 is projected on the 1st focus P1 from one window 32. The scattered light 38 from foreign matter such as dust and a flaw present at the 1st focus P1 is reflected by the reflecting mirror 30 and condensed on the 2nd focus P2, and the light is guided into a dark box 14 through the window 15 of the dark box 14 and detected by the photodetector 16. Consequently, the scattered light 38 is condensed efficiently and the detection of the unnecessary light is evaded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、被検査物体の表面状態の検査などに用いる
光学検査装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical inspection device used for inspecting the surface condition of an object to be inspected.

〔従来の技術〕[Conventional technology]

第6図は、被検査物体としてたとえば、半導体ウェーハ
の表面検査に用いる従来の光学検査装置を示す。
FIG. 6 shows a conventional optical inspection apparatus used for inspecting the surface of, for example, a semiconductor wafer as an object to be inspected.

この光学検査装置は、被検査物体としてのウェーハ2を
回転可能な検査テーブル4に載せ、その表面にレーザー
光源6からレーザー光8を積分球10を通して照射し、
表面上の傷や異物による散乱光12を積分球10によっ
て集光して暗箱14に設置された光検出器16に導いて
受光するものである。
This optical inspection device places a wafer 2 as an object to be inspected on a rotatable inspection table 4, and irradiates the surface with laser light 8 from a laser light source 6 through an integrating sphere 10.
Scattered light 12 due to scratches or foreign matter on the surface is collected by an integrating sphere 10 and guided to a photodetector 16 installed in a dark box 14 for reception.

積分球10は、散乱光12の集光手段として設置され、
内面を全反射面にしたものであって、窓18.20から
ウェーハ2へのレーザー光8の照射を行い、ウェーハ2
からの直接反射を窓22から逃がすようにしたものであ
る。そして、レーザー光8の光路以外を通る散乱光12
を積分球10の内部で反射させ、窓24から光検出器1
6に導いて、たとえば電気信号に変換する。
The integrating sphere 10 is installed as a condensing means for the scattered light 12,
The inner surface is a total reflection surface, and the laser beam 8 is irradiated from the window 18.20 to the wafer 2.
Direct reflection from the window 22 is allowed to escape from the window 22. Scattered light 12 passing through a path other than the optical path of laser light 8
is reflected inside the integrating sphere 10 and sent to the photodetector 1 through the window 24.
6 and convert it into, for example, an electrical signal.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

このような積分球10を用いた場合、窓18から迷い込
む光26も、積分球10内で全反射されて、検出すべき
散乱光12とともに光検出器16に導かれ、また、光学
系の汚れなどによる屈折から生じた迷光も導かれるので
、光学的なSN比が低下するのである。このような積分
球1oは、理想的な全反射を行うことは難しく、反射を
繰り返す中に光の減衰を生じ、検出信号レベルの低下を
来すのである。
When such an integrating sphere 10 is used, the light 26 that strays through the window 18 is also totally reflected within the integrating sphere 10 and guided to the photodetector 16 together with the scattered light 12 to be detected. Stray light generated from refraction due to such factors is also guided, resulting in a decrease in the optical S/N ratio. It is difficult for such an integrating sphere 1o to perform ideal total reflection, and light attenuation occurs during repeated reflections, resulting in a decrease in the detection signal level.

そこで、この発明は、不要な光による影響を回避すると
ともに、散乱光の減衰を防止したものである。
Therefore, the present invention avoids the influence of unnecessary light and prevents the attenuation of scattered light.

〔問題点を解決するための手段〕[Means for solving problems]

この発明の光学検査装置は、第1図に示すように、被検
査物体(ウェーハ2)の表面に第1焦点P1を持つとと
もに、被検査物体の表面以外の部位に第2焦点P2を持
つ反射鏡(楕円リフレクタ28、第5図の楕円リフレク
タ29)と、第2焦点P2側に光検出手段(光検出器1
6)とを備え、検査光(レーザー光36)を被検査物体
の第1焦点に当て、その第1焦点部分からの散乱光38
を反射鏡で集光して光検出手段で検出するものである。
As shown in FIG. 1, the optical inspection apparatus of the present invention has a first focus P1 on the surface of an object to be inspected (wafer 2), and a second focus P2 on a portion other than the surface of the object to be inspected. A mirror (elliptic reflector 28, elliptical reflector 29 in FIG. 5) and a light detection means (photodetector 1) on the second focal point P2 side.
6), the inspection light (laser light 36) is applied to the first focus of the object to be inspected, and the scattered light 38 from the first focus portion is
The light is collected by a reflecting mirror and detected by a light detection means.

〔作   用〕[For production]

このように構成すると、第1焦点P1から発生した散乱
光38は、−回の反射で光検出手段(光検出器16)に
到達させることができ、また、不要な光は第2焦点P2
への集光確率が低くなるため、検出精度を高めることが
できるのである。
With this configuration, the scattered light 38 generated from the first focal point P1 can reach the light detection means (photodetector 16) by - times of reflection, and unnecessary light can be transmitted to the second focal point P2.
Since the probability of light convergence on the target is lowered, detection accuracy can be improved.

〔実 施 例〕〔Example〕

第1図は、この発明の光学検査装置の実施例を示す。 FIG. 1 shows an embodiment of the optical inspection apparatus of the present invention.

被検査物体として、たとえば、ウェーハ2は、回転可能
な検査テーブル4の上に設置される。
For example, a wafer 2 as an object to be inspected is placed on a rotatable inspection table 4.

このウェーハ2の上面側に、その検査面に第1焦点P1
を結ぶとともに、光検出手段としての光検出器16側に
第2焦点P2を結ぶ反射鏡として楕円リフレクタ28を
設置する。楕円リフレクタ28は、第2図および第3図
に示すように、楕円球の1/4部分の内面を反射面30
としたものであり、下面および側面側を解放するととも
に、背面部に窓32.34を形成したものである。
On the upper surface side of this wafer 2, a first focal point P1 is placed on the inspection surface.
At the same time, an elliptical reflector 28 is installed as a reflecting mirror that connects the second focal point P2 to the photodetector 16 side as a photodetector. As shown in FIG. 2 and FIG.
The lower surface and side surfaces are open, and windows 32 and 34 are formed on the back surface.

そこで、検査光を発する検査光源としてのレーザー光源
6が発した細いビーム状のレーザー光36を、一方の窓
32から第1焦点PIに照射する。この場合、検査光と
してのレーザー光36の入射角は、ウェーハ2の表面上
の直角を成す基準線りとの比較から明らかなように、4
5°以下に設定する。このように、ウェーハ2に照射さ
れ、その表面で反射したレーザー光36は楕円リフレク
タ28の窓34から外部に逃げ、第1焦点P1に存在す
る塵や傷などの異物からの散乱光38は、反射面30で
受けて反射させ、第2焦点P2に集光することができる
。すなわち、散乱光38は、楕円リフレクタ28の反射
面30での一回の反射のみで、減衰を伴うことなく、第
2焦点P2に集光されて、暗箱14の窓15から暗箱1
4内に導かれ、光検出器16で検出される。散乱光38
の減衰が少ないので、SN比が高くなるのである。
Therefore, a narrow beam of laser light 36 emitted by a laser light source 6 serving as an inspection light source that emits inspection light is irradiated from one window 32 to the first focal point PI. In this case, the incident angle of the laser beam 36 as the inspection light is 4, as is clear from the comparison with the reference line forming a right angle on the surface of the wafer 2.
Set to 5° or less. In this way, the laser beam 36 irradiated onto the wafer 2 and reflected on its surface escapes to the outside through the window 34 of the elliptical reflector 28, and the scattered light 38 from foreign objects such as dust and scratches present at the first focal point P1 is The light can be received by the reflective surface 30, reflected, and focused on the second focal point P2. That is, the scattered light 38 is reflected only once on the reflective surface 30 of the elliptical reflector 28 and is condensed at the second focal point P2 without attenuation, and is transmitted from the window 15 of the dark box 14 to the dark box 1.
4 and detected by a photodetector 16. Scattered light 38
Since there is less attenuation, the S/N ratio becomes higher.

そして、光検出器16は、光を電気信号に変換する受光
素子で構成すれば、散乱光38を電気信号として検出す
ることができるのである。
If the photodetector 16 is configured with a light receiving element that converts light into an electrical signal, it can detect the scattered light 38 as an electrical signal.

また、光学系の汚れなどによる反射で窓32.34から
検査面に入った不要な光としての迷光40は、第1焦点
P、に当たる確率が低く、ウェーハ2の表面で反射され
た後、反射面30で反射するが、第2焦点P2への集光
確率は極めて少ないことから、光検出器16で信号とし
ての検出は行われない。
In addition, stray light 40 as unnecessary light that enters the inspection surface through the windows 32 and 34 due to reflection from dirt in the optical system has a low probability of hitting the first focal point P, and after being reflected from the surface of the wafer 2, Although it is reflected by the surface 30, the probability of convergence on the second focal point P2 is extremely low, so the photodetector 16 does not detect it as a signal.

特に、楕円リフレクタ28は、完全楕円球体の174部
分で構成されているので、異物からの散乱光38を全立
体角のどの方向でも、90″以上の光を容易に集光し、
効率良く光検出器16に導くことができるのである。
In particular, since the elliptical reflector 28 is made up of 174 parts of a perfect ellipsoid, it can easily condense the scattered light 38 from the foreign object into a light of 90'' or more in any direction of the entire solid angle.
This allows the light to be efficiently guided to the photodetector 16.

ところで、暗箱1゛4は、散乱光38を取り込むために
窓15を以て開口されているが、たとえば第4図に示す
ように、絞り板42を取り付けてもよい。絞り板42は
、中央に必要な散乱光38を通過させるために、前面を
狭く暗箱14の内部に向かって傾斜面を以て大きくなる
ようにした細隙44を形成するとともに、その細隙44
を中心にして不要な光を遮断するための筒状のフード4
6を設ける。このような絞り板42を用いることにより
、自然光や迷光などの不要な光の入射を抑えてSN比を
改善することができる。
Incidentally, the dark box 1-4 is opened with a window 15 to take in the scattered light 38, but a diaphragm plate 42 may be attached, for example, as shown in FIG. The diaphragm plate 42 forms a slit 44 in the center of which the front surface is narrow and becomes larger with an inclined surface toward the inside of the dark box 14 in order to pass the necessary scattered light 38.
Cylindrical hood 4 to block unnecessary light around the
6 will be provided. By using such a diaphragm plate 42, it is possible to suppress the incidence of unnecessary light such as natural light and stray light, and improve the S/N ratio.

また、第1図に示した実施例では、完全楕円球体の1/
4部分で楕円リフレクタ28を形成したが、第5図に示
すように、楕円状円筒面を以て反射面30とした楕円リ
フレクタ29を用いて、その散乱光38を暗箱14の前
面部に形成された長方形状の窓15に導くようにしても
、同様の効果が期待できる。
In addition, in the embodiment shown in FIG.
The elliptical reflector 28 was formed from four parts, and as shown in FIG. A similar effect can be expected even if the light is guided through the rectangular window 15.

なお、実施例では被検査物体としてウェーハ2を例に取
って説明したが、この発明は研磨された各種の金属表面
などの表面状態の光学的検査に用いることができる。
Although the embodiment has been described using the wafer 2 as an example of the object to be inspected, the present invention can be used for optical inspection of the surface condition of various polished metal surfaces.

〔発明の効果〕〔Effect of the invention〕

この発明によれば、散乱光を減衰を伴うことなく効率良
く集光できるとともに、不要光の検出を回避することが
でき、信頼性の高い光学的検査を実現できる。
According to the present invention, scattered light can be efficiently collected without attenuation, detection of unnecessary light can be avoided, and highly reliable optical inspection can be realized.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図はこの発明の光学検査装置の実施例
を示す図、第3図は第2図のm−m線断面図、第4図お
よび第5図はこの発明の光学検査装置の他の実施例を示
す図、第6図は従来の光学検査装置を示す図である。 2・・・ウェーハ(被検査物体)、16・・・光検出器
(光検出手段)、28.29・・・楕円リフレクタ(反
射鏡)、36・・・レーザー光(検査光)。 第6図 第2図 第3図 V噂 第 5 図
1 and 2 are diagrams showing an embodiment of the optical inspection device of the present invention, FIG. 3 is a sectional view taken along line mm in FIG. 2, and FIGS. 4 and 5 are diagrams showing an embodiment of the optical inspection device of the present invention. FIG. 6 is a diagram showing a conventional optical inspection device. 2... Wafer (object to be inspected), 16... Photodetector (light detection means), 28.29... Elliptical reflector (reflector), 36... Laser light (inspection light). Figure 6 Figure 2 Figure 3 V Rumors Figure 5

Claims (1)

【特許請求の範囲】[Claims] 被検査物体の表面に第1焦点を持つとともに、被検査物
体の表面以外の部位に第2焦点を持つ反射鏡と、第2焦
点側に光検出手段とを備え、検査光を被検査物体の第1
焦点に当て、その第1焦点部分からの散乱光を反射鏡で
集光して光検出手段で検出する光学検査装置。
A reflecting mirror having a first focus on the surface of the object to be inspected and a second focus on a part other than the surface of the object to be inspected, and a light detection means on the second focal point side, are equipped to direct the inspection light to the object to be inspected. 1st
An optical inspection device that focuses light on a focal point, collects scattered light from the first focal point using a reflecting mirror, and detects the collected light using a light detection means.
JP62042004A 1987-02-25 1987-02-25 Optical inspection device Expired - Fee Related JPH0676970B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62042004A JPH0676970B2 (en) 1987-02-25 1987-02-25 Optical inspection device
KR1019880001928A KR970000709B1 (en) 1987-02-25 1988-02-24 Surface testing apparatus of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62042004A JPH0676970B2 (en) 1987-02-25 1987-02-25 Optical inspection device

Publications (2)

Publication Number Publication Date
JPS63208747A true JPS63208747A (en) 1988-08-30
JPH0676970B2 JPH0676970B2 (en) 1994-09-28

Family

ID=12624047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62042004A Expired - Fee Related JPH0676970B2 (en) 1987-02-25 1987-02-25 Optical inspection device

Country Status (1)

Country Link
JP (1) JPH0676970B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6080965A (en) * 1997-09-18 2000-06-27 Tokyo Electron Limited Single-substrate-heat-treatment apparatus in semiconductor processing system
US6123429A (en) * 1997-05-17 2000-09-26 Tokyo Electron Limited Light source device
JP2009264919A (en) * 2008-04-25 2009-11-12 Hioki Ee Corp Short-circuit position detector
EP3301707A1 (en) * 2016-09-30 2018-04-04 Shibaura Mechatronics Corporation Substrate processing apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58120155A (en) * 1982-01-12 1983-07-16 Hitachi Ltd Detecting device for extraneous substance on reticle
JPS606854A (en) * 1983-06-24 1985-01-14 Hitachi Ltd Defect detecting method of surface of magnetic disk surface plate
JPS60154224A (en) * 1984-01-23 1985-08-13 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション Thermal wave microscope

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58120155A (en) * 1982-01-12 1983-07-16 Hitachi Ltd Detecting device for extraneous substance on reticle
JPS606854A (en) * 1983-06-24 1985-01-14 Hitachi Ltd Defect detecting method of surface of magnetic disk surface plate
JPS60154224A (en) * 1984-01-23 1985-08-13 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション Thermal wave microscope

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6123429A (en) * 1997-05-17 2000-09-26 Tokyo Electron Limited Light source device
US6080965A (en) * 1997-09-18 2000-06-27 Tokyo Electron Limited Single-substrate-heat-treatment apparatus in semiconductor processing system
JP2009264919A (en) * 2008-04-25 2009-11-12 Hioki Ee Corp Short-circuit position detector
EP3301707A1 (en) * 2016-09-30 2018-04-04 Shibaura Mechatronics Corporation Substrate processing apparatus

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