JPS6225485A - 半導体レ−ザ装置 - Google Patents

半導体レ−ザ装置

Info

Publication number
JPS6225485A
JPS6225485A JP60166607A JP16660785A JPS6225485A JP S6225485 A JPS6225485 A JP S6225485A JP 60166607 A JP60166607 A JP 60166607A JP 16660785 A JP16660785 A JP 16660785A JP S6225485 A JPS6225485 A JP S6225485A
Authority
JP
Japan
Prior art keywords
semiconductor
layer
type
active layer
cladding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60166607A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0461514B2 (enEXAMPLES
Inventor
Kunihiko Isshiki
邦彦 一色
Wataru Suzaki
須崎　渉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60166607A priority Critical patent/JPS6225485A/ja
Priority to US06/888,398 priority patent/US4757509A/en
Publication of JPS6225485A publication Critical patent/JPS6225485A/ja
Publication of JPH0461514B2 publication Critical patent/JPH0461514B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP60166607A 1985-07-25 1985-07-25 半導体レ−ザ装置 Granted JPS6225485A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60166607A JPS6225485A (ja) 1985-07-25 1985-07-25 半導体レ−ザ装置
US06/888,398 US4757509A (en) 1985-07-25 1986-07-23 Semiconductor laser apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60166607A JPS6225485A (ja) 1985-07-25 1985-07-25 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS6225485A true JPS6225485A (ja) 1987-02-03
JPH0461514B2 JPH0461514B2 (enEXAMPLES) 1992-10-01

Family

ID=15834435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60166607A Granted JPS6225485A (ja) 1985-07-25 1985-07-25 半導体レ−ザ装置

Country Status (2)

Country Link
US (1) US4757509A (enEXAMPLES)
JP (1) JPS6225485A (enEXAMPLES)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4964135A (en) * 1988-07-22 1990-10-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0646669B2 (ja) * 1987-07-28 1994-06-15 日本電気株式会社 半導体レ−ザ及びその製造方法
US5255281A (en) * 1990-04-26 1993-10-19 Fujitsu Limited Semiconductor laser having double heterostructure
JPH06302908A (ja) * 1993-04-15 1994-10-28 Fujitsu Ltd 半導体レーザ
JP2000323789A (ja) * 1999-05-11 2000-11-24 Nec Corp 窓型半導体レーザおよびその製造方法
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
NL1015714C2 (nl) * 2000-07-14 2002-01-15 Dsm Nv Werkwijze voor het kristalliseren van enantiomeer verrijkt 2-acetylthio-3-fenylpropaanzuur.
US7561770B2 (en) * 2007-07-30 2009-07-14 Hewlett-Packard Development Company, L.P. Microresonator systems and methods of fabricating the same
EP2043209B1 (de) * 2007-09-28 2011-10-26 OSRAM Opto Semiconductors GmbH Kantenemittierender Halbleiterlaser mit einem Wellenleiter
DE102007058950A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Wellenleiter
DE102015104206A1 (de) * 2015-03-20 2016-09-22 Osram Opto Semiconductors Gmbh Laserdiode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712581A (en) * 1980-06-26 1982-01-22 Nec Corp Semiconductor laser
US4506366A (en) * 1981-07-03 1985-03-19 Hitachi, Ltd. Semiconductor laser device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4185256A (en) * 1978-01-13 1980-01-22 Xerox Corporation Mode control of heterojunction injection lasers and method of fabrication

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712581A (en) * 1980-06-26 1982-01-22 Nec Corp Semiconductor laser
US4506366A (en) * 1981-07-03 1985-03-19 Hitachi, Ltd. Semiconductor laser device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4964135A (en) * 1988-07-22 1990-10-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser
US5045500A (en) * 1988-07-22 1991-09-03 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor laser

Also Published As

Publication number Publication date
JPH0461514B2 (enEXAMPLES) 1992-10-01
US4757509A (en) 1988-07-12

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