JPS622463B2 - - Google Patents

Info

Publication number
JPS622463B2
JPS622463B2 JP56024120A JP2412081A JPS622463B2 JP S622463 B2 JPS622463 B2 JP S622463B2 JP 56024120 A JP56024120 A JP 56024120A JP 2412081 A JP2412081 A JP 2412081A JP S622463 B2 JPS622463 B2 JP S622463B2
Authority
JP
Japan
Prior art keywords
resin
film pattern
resin film
pattern
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56024120A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57138173A (en
Inventor
Kazufumi Ogawa
Takao Chikamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56024120A priority Critical patent/JPS57138173A/ja
Publication of JPS57138173A publication Critical patent/JPS57138173A/ja
Publication of JPS622463B2 publication Critical patent/JPS622463B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP56024120A 1981-02-19 1981-02-19 Manufacture of solid image pick up element Granted JPS57138173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56024120A JPS57138173A (en) 1981-02-19 1981-02-19 Manufacture of solid image pick up element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56024120A JPS57138173A (en) 1981-02-19 1981-02-19 Manufacture of solid image pick up element

Publications (2)

Publication Number Publication Date
JPS57138173A JPS57138173A (en) 1982-08-26
JPS622463B2 true JPS622463B2 (enrdf_load_stackoverflow) 1987-01-20

Family

ID=12129445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56024120A Granted JPS57138173A (en) 1981-02-19 1981-02-19 Manufacture of solid image pick up element

Country Status (1)

Country Link
JP (1) JPS57138173A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0261762U (enrdf_load_stackoverflow) * 1988-10-31 1990-05-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0261762U (enrdf_load_stackoverflow) * 1988-10-31 1990-05-08

Also Published As

Publication number Publication date
JPS57138173A (en) 1982-08-26

Similar Documents

Publication Publication Date Title
US5408121A (en) Semiconductor device, an image sensor device, and methods for producing the same
JPH05502783A (ja) 光電変換素子上における静電荷制御用被覆層
CN101582393A (zh) 固体摄像器件制造方法和电子装置制造方法
CN1203695A (zh) 在辐射检测器和成象装置的衬底上形成触电的方法
US4345021A (en) Solid-state image pickup element and process for fabricating the same
JP2010021266A (ja) 接合ウエハ、その製造方法、及び半導体装置の製造方法
US4447720A (en) Solid-state image pickup element and process for fabricating the same
JP3964017B2 (ja) 放射撮像装置用のコンタクト・パッド
JPH10206229A (ja) 放射撮像装置およびその光検出器アレイ用コンタクト・フィンガ・アセンブリの形成方法
JPS622463B2 (enrdf_load_stackoverflow)
JPS5928063B2 (ja) 固体撮像素子の製造方法
JPH01270362A (ja) 固体撮像装置の製造方法
JP2005353631A (ja) 固体撮像装置の製造方法
KR100549324B1 (ko) 패드 오픈용 포토레지스트를 이용한 이미지센서의 제조방법
JPS5928065B2 (ja) 固体撮像素子の製造方法
JPS5846183B2 (ja) 固体撮像素子の製造方法
JPH05144938A (ja) 固体撮像装置の製造方法
KR20010010311A (ko) 조립시 고체 촬상 소자의 마이크로 렌즈 보호 방법
JP2000507401A (ja) 耐腐食性イメージング装置
JPS59122193A (ja) 固体撮像装置
CN110277419B (zh) 图像传感器及其形成方法
JPS6251504B2 (enrdf_load_stackoverflow)
JPS61216360A (ja) 密着型イメ−ジセンサ
JPS59104523A (ja) 赤外線検知素子の製造方法
JPH05299625A (ja) 固体撮像素子およびその製造方法