JPS6223466B2 - - Google Patents

Info

Publication number
JPS6223466B2
JPS6223466B2 JP55018139A JP1813980A JPS6223466B2 JP S6223466 B2 JPS6223466 B2 JP S6223466B2 JP 55018139 A JP55018139 A JP 55018139A JP 1813980 A JP1813980 A JP 1813980A JP S6223466 B2 JPS6223466 B2 JP S6223466B2
Authority
JP
Japan
Prior art keywords
region
type
layer
integrated circuit
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55018139A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56115555A (en
Inventor
Yoshuki Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1813980A priority Critical patent/JPS56115555A/ja
Publication of JPS56115555A publication Critical patent/JPS56115555A/ja
Publication of JPS6223466B2 publication Critical patent/JPS6223466B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP1813980A 1980-02-16 1980-02-16 Semiconductor integrated circuit device Granted JPS56115555A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1813980A JPS56115555A (en) 1980-02-16 1980-02-16 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1813980A JPS56115555A (en) 1980-02-16 1980-02-16 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS56115555A JPS56115555A (en) 1981-09-10
JPS6223466B2 true JPS6223466B2 (en:Method) 1987-05-22

Family

ID=11963262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1813980A Granted JPS56115555A (en) 1980-02-16 1980-02-16 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56115555A (en:Method)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02102605U (en:Method) * 1989-02-02 1990-08-15
JPH02224378A (ja) * 1989-02-27 1990-09-06 Hamamatsu Photonics Kk 発光素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02102605U (en:Method) * 1989-02-02 1990-08-15
JPH02224378A (ja) * 1989-02-27 1990-09-06 Hamamatsu Photonics Kk 発光素子

Also Published As

Publication number Publication date
JPS56115555A (en) 1981-09-10

Similar Documents

Publication Publication Date Title
US4117507A (en) Diode formed in integrated-circuit structure
US4543593A (en) Semiconductor protective device
JPH09129741A (ja) 半導体集積回路とその製造方法
JPH07297373A (ja) 誘導性負荷要素に対する集積ドライバ回路装置
US4500900A (en) Emitter ballast resistor configuration
JPS5852347B2 (ja) 高耐圧半導体装置
JP4460272B2 (ja) パワートランジスタおよびそれを用いた半導体集積回路
JPS6223466B2 (en:Method)
JP3459532B2 (ja) 半導体集積回路およびその製造方法
JPS6359262B2 (en:Method)
JPS6327865B2 (en:Method)
JPS6223465B2 (en:Method)
JP2901275B2 (ja) 半導体集積回路装置
JP3128958B2 (ja) 半導体集積回路
JPS6116569A (ja) 半導体集積回路装置
JPH08227941A (ja) 複合半導体素子
JPH0629466A (ja) 半導体集積回路
JPS6231502B2 (en:Method)
JPS61208260A (ja) 半導体装置
JPH0558256B2 (en:Method)
JPH0474478A (ja) ダイオード
JPH02154464A (ja) ショットキーバリアダイオード
JPH0585054U (ja) モノリシック半導体集積回路デバイス用複数導体層構造
JPH0322693B2 (en:Method)
JPS5931051A (ja) 高耐圧半導体装置