JPS6222547B2 - - Google Patents
Info
- Publication number
- JPS6222547B2 JPS6222547B2 JP55084167A JP8416780A JPS6222547B2 JP S6222547 B2 JPS6222547 B2 JP S6222547B2 JP 55084167 A JP55084167 A JP 55084167A JP 8416780 A JP8416780 A JP 8416780A JP S6222547 B2 JPS6222547 B2 JP S6222547B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- conductivity type
- photoelectric conversion
- conversion device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8416780A JPS5710275A (en) | 1980-06-20 | 1980-06-20 | Semiconductor photoelectric converter and photoelectric conversion using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8416780A JPS5710275A (en) | 1980-06-20 | 1980-06-20 | Semiconductor photoelectric converter and photoelectric conversion using it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5710275A JPS5710275A (en) | 1982-01-19 |
| JPS6222547B2 true JPS6222547B2 (enrdf_load_stackoverflow) | 1987-05-19 |
Family
ID=13822931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8416780A Granted JPS5710275A (en) | 1980-06-20 | 1980-06-20 | Semiconductor photoelectric converter and photoelectric conversion using it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710275A (enrdf_load_stackoverflow) |
-
1980
- 1980-06-20 JP JP8416780A patent/JPS5710275A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5710275A (en) | 1982-01-19 |
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