JPS6222464B2 - - Google Patents
Info
- Publication number
- JPS6222464B2 JPS6222464B2 JP53059228A JP5922878A JPS6222464B2 JP S6222464 B2 JPS6222464 B2 JP S6222464B2 JP 53059228 A JP53059228 A JP 53059228A JP 5922878 A JP5922878 A JP 5922878A JP S6222464 B2 JPS6222464 B2 JP S6222464B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- channel
- fet
- channel region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 3
- 239000012141 concentrate Substances 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 60
- 238000009792 diffusion process Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5922878A JPS54150092A (en) | 1978-05-17 | 1978-05-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5922878A JPS54150092A (en) | 1978-05-17 | 1978-05-17 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54150092A JPS54150092A (en) | 1979-11-24 |
| JPS6222464B2 true JPS6222464B2 (fi) | 1987-05-18 |
Family
ID=13107301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5922878A Granted JPS54150092A (en) | 1978-05-17 | 1978-05-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54150092A (fi) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0318413U (fi) * | 1989-03-02 | 1991-02-22 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5124874A (ja) * | 1974-08-23 | 1976-02-28 | Nippon Telegraph & Telephone | Setsugogatadenkaikokatoranjisuta |
| JPS5230179A (en) * | 1975-09-01 | 1977-03-07 | Nec Corp | Junction-type electric field effective transistor |
| JPS52100877A (en) * | 1976-02-19 | 1977-08-24 | Sony Corp | Field effect transistor of junction type |
-
1978
- 1978-05-17 JP JP5922878A patent/JPS54150092A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5124874A (ja) * | 1974-08-23 | 1976-02-28 | Nippon Telegraph & Telephone | Setsugogatadenkaikokatoranjisuta |
| JPS5230179A (en) * | 1975-09-01 | 1977-03-07 | Nec Corp | Junction-type electric field effective transistor |
| JPS52100877A (en) * | 1976-02-19 | 1977-08-24 | Sony Corp | Field effect transistor of junction type |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0318413U (fi) * | 1989-03-02 | 1991-02-22 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54150092A (en) | 1979-11-24 |
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