JPS6222444B2 - - Google Patents

Info

Publication number
JPS6222444B2
JPS6222444B2 JP54150253A JP15025379A JPS6222444B2 JP S6222444 B2 JPS6222444 B2 JP S6222444B2 JP 54150253 A JP54150253 A JP 54150253A JP 15025379 A JP15025379 A JP 15025379A JP S6222444 B2 JPS6222444 B2 JP S6222444B2
Authority
JP
Japan
Prior art keywords
carrier concentration
layer
hcl
interface
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54150253A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5673427A (en
Inventor
Katsunobu Maeda
Yoshinobu Tsujikawa
Hideki Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP15025379A priority Critical patent/JPS5673427A/ja
Publication of JPS5673427A publication Critical patent/JPS5673427A/ja
Publication of JPS6222444B2 publication Critical patent/JPS6222444B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
JP15025379A 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer Granted JPS5673427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15025379A JPS5673427A (en) 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15025379A JPS5673427A (en) 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer

Publications (2)

Publication Number Publication Date
JPS5673427A JPS5673427A (en) 1981-06-18
JPS6222444B2 true JPS6222444B2 (enrdf_load_stackoverflow) 1987-05-18

Family

ID=15492895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15025379A Granted JPS5673427A (en) 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer

Country Status (1)

Country Link
JP (1) JPS5673427A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6734476B2 (en) * 2001-06-14 2004-05-11 Ixys Corporation Semiconductor devices having group III-V compound layers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559887B2 (enrdf_load_stackoverflow) * 1972-06-05 1980-03-12

Also Published As

Publication number Publication date
JPS5673427A (en) 1981-06-18

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