JPS6222405B2 - - Google Patents
Info
- Publication number
- JPS6222405B2 JPS6222405B2 JP54081206A JP8120679A JPS6222405B2 JP S6222405 B2 JPS6222405 B2 JP S6222405B2 JP 54081206 A JP54081206 A JP 54081206A JP 8120679 A JP8120679 A JP 8120679A JP S6222405 B2 JPS6222405 B2 JP S6222405B2
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- light receiving
- ctd
- sensing element
- mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000001514 detection method Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000010407 anodic oxide Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- AMHIJMKZPBMCKI-PKLGAXGESA-N ctds Chemical compound O[C@@H]1[C@@H](OS(O)(=O)=O)[C@@H]2O[C@H](COS(O)(=O)=O)[C@H]1O[C@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@H](CO)[C@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O2 AMHIJMKZPBMCKI-PKLGAXGESA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
- H01L27/14881—Infrared CCD or CID imagers of the hybrid type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8120679A JPS566128A (en) | 1979-06-26 | 1979-06-26 | Infrared-ray detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8120679A JPS566128A (en) | 1979-06-26 | 1979-06-26 | Infrared-ray detector |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS566128A JPS566128A (en) | 1981-01-22 |
JPS6222405B2 true JPS6222405B2 (nl) | 1987-05-18 |
Family
ID=13740003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8120679A Granted JPS566128A (en) | 1979-06-26 | 1979-06-26 | Infrared-ray detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS566128A (nl) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5890769A (ja) * | 1981-11-25 | 1983-05-30 | Mitsubishi Electric Corp | 積層半導体装置 |
JPS5973740A (ja) * | 1982-10-19 | 1984-04-26 | Nippon Denso Co Ltd | 化学及び物理量電気変換装置 |
JP4089033B2 (ja) * | 1998-09-25 | 2008-05-21 | 松下電工株式会社 | センサ |
-
1979
- 1979-06-26 JP JP8120679A patent/JPS566128A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS566128A (en) | 1981-01-22 |
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