JPS6221792A - 液相エピタキシヤル成長装置 - Google Patents
液相エピタキシヤル成長装置Info
- Publication number
- JPS6221792A JPS6221792A JP15892385A JP15892385A JPS6221792A JP S6221792 A JPS6221792 A JP S6221792A JP 15892385 A JP15892385 A JP 15892385A JP 15892385 A JP15892385 A JP 15892385A JP S6221792 A JPS6221792 A JP S6221792A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- growth
- substrate holder
- piston
- holder part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007791 liquid phase Substances 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 abstract description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 6
- 229920006395 saturated elastomer Polymers 0.000 abstract description 2
- 238000000137 annealing Methods 0.000 abstract 2
- 239000000243 solution Substances 0.000 description 64
- 238000001816 cooling Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 5
- 238000004781 supercooling Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15892385A JPS6221792A (ja) | 1985-07-18 | 1985-07-18 | 液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15892385A JPS6221792A (ja) | 1985-07-18 | 1985-07-18 | 液相エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6221792A true JPS6221792A (ja) | 1987-01-30 |
| JPH0532359B2 JPH0532359B2 (enrdf_load_stackoverflow) | 1993-05-14 |
Family
ID=15682290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15892385A Granted JPS6221792A (ja) | 1985-07-18 | 1985-07-18 | 液相エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6221792A (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS627696A (ja) * | 1985-07-04 | 1987-01-14 | Hitachi Cable Ltd | 液相エピタキシャル成長方法及びその装置 |
-
1985
- 1985-07-18 JP JP15892385A patent/JPS6221792A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS627696A (ja) * | 1985-07-04 | 1987-01-14 | Hitachi Cable Ltd | 液相エピタキシャル成長方法及びその装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0532359B2 (enrdf_load_stackoverflow) | 1993-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4088514A (en) | Method for epitaxial growth of thin semiconductor layer from solution | |
| US3897281A (en) | Method for epitaxially growing a semiconductor material on a substrate from the liquid phase | |
| US3809584A (en) | Method for continuously growing epitaxial layers of semiconductors from liquid phase | |
| US3821039A (en) | Method of epitaxially depositing a semiconductor material on a substrate | |
| JPS6221792A (ja) | 液相エピタキシヤル成長装置 | |
| US4052252A (en) | Liquid phase epitaxial growth with interfacial temperature difference | |
| JPS58120600A (ja) | ３―ｖ族化合物半導体のエピタキシカル成長方法 | |
| US5223079A (en) | Forming thin liquid phase epitaxial layers | |
| JPS5919920B2 (ja) | 液相エピタキシヤル成長装置 | |
| JPS63159290A (ja) | 液相エピタキシャル成長方法 | |
| Thomas | Growth and Structure of Evaporated Silicon Layers | |
| US4366009A (en) | Method of manufacturing semiconductor structures by epitaxial growth from the liquid phase | |
| JPH02133390A (ja) | 多層エピタキシヤル成長方法及び成長装置 | |
| JPH0481550B2 (enrdf_load_stackoverflow) | ||
| JPH02157185A (ja) | 液相エピタキシヤル成長方法及び成長装置 | |
| JPH0538063Y2 (enrdf_load_stackoverflow) | ||
| JP3073870B2 (ja) | 半導体液相エピタキシャル装置 | |
| JPH0519516B2 (enrdf_load_stackoverflow) | ||
| JPS6311597A (ja) | 液相エピタキシヤル成長方法及びその装置 | |
| JPH03208883A (ja) | 液相エピタキシャル成長方法及びその装置 | |
| JPS6235998B2 (enrdf_load_stackoverflow) | ||
| JPS63215589A (ja) | 液相エピタキシヤル成長装置 | |
| JPH0369587A (ja) | 液相エピタキシャル成長装置 | |
| JPH0694398B2 (ja) | 液相エピタキシヤル成長方法 | |
| JPH058154B2 (enrdf_load_stackoverflow) |