JPS6221269B2 - - Google Patents

Info

Publication number
JPS6221269B2
JPS6221269B2 JP55159003A JP15900380A JPS6221269B2 JP S6221269 B2 JPS6221269 B2 JP S6221269B2 JP 55159003 A JP55159003 A JP 55159003A JP 15900380 A JP15900380 A JP 15900380A JP S6221269 B2 JPS6221269 B2 JP S6221269B2
Authority
JP
Japan
Prior art keywords
single crystal
substrate
semiconductor
forming
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55159003A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5783042A (en
Inventor
Tetsuo Yoshino
Shigeharu Yamamura
Koichi Togashi
Kazuyuki Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP15900380A priority Critical patent/JPS5783042A/ja
Publication of JPS5783042A publication Critical patent/JPS5783042A/ja
Publication of JPS6221269B2 publication Critical patent/JPS6221269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP15900380A 1980-11-12 1980-11-12 Manufacture of semiconductor device Granted JPS5783042A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15900380A JPS5783042A (en) 1980-11-12 1980-11-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15900380A JPS5783042A (en) 1980-11-12 1980-11-12 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5783042A JPS5783042A (en) 1982-05-24
JPS6221269B2 true JPS6221269B2 (ko) 1987-05-12

Family

ID=15684101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15900380A Granted JPS5783042A (en) 1980-11-12 1980-11-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5783042A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7061375B2 (en) 2003-03-12 2006-06-13 Honda Motor Co., Ltd. System for warning a failure to wear a seat belt
JP4725282B2 (ja) * 2005-10-17 2011-07-13 トヨタ自動車株式会社 車両の制御装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247686A (en) * 1975-10-15 1977-04-15 Toshiba Corp Semiconductor device and process for production of same
JPS5563840A (en) * 1978-11-08 1980-05-14 Hitachi Ltd Semiconductor integrated device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247686A (en) * 1975-10-15 1977-04-15 Toshiba Corp Semiconductor device and process for production of same
JPS5563840A (en) * 1978-11-08 1980-05-14 Hitachi Ltd Semiconductor integrated device

Also Published As

Publication number Publication date
JPS5783042A (en) 1982-05-24

Similar Documents

Publication Publication Date Title
US4851078A (en) Dielectric isolation process using double wafer bonding
JPH07326664A (ja) ウエハの誘電体分離溝の充填方法
US4891092A (en) Method for making a silicon-on-insulator substrate
US4193836A (en) Method for making semiconductor structure
JPH0312775B2 (ko)
JP2699359B2 (ja) 半導体基板の製造方法
KR100353174B1 (ko) 절연체 상 실리콘 기판 제조 방법
US3974006A (en) Method of obtaining high temperature resistant assemblies comprising isolated silicon islands bonded to a substrate
JPS6221269B2 (ko)
JPS59232437A (ja) 半導体装置の製造方法
EP0469583A2 (en) Semiconductor substrate with complete dielectric isolation structure and method of making the same
JP2750163B2 (ja) 誘電体分離型半導体装置の製造方法
JPS61182242A (ja) 半導体装置の製造方法
JPS618944A (ja) 半導体装置およびその製造方法
JPH02205339A (ja) 半導体装置の製造方法
JPS6362252A (ja) 誘電体絶縁分離基板の製造方法
JPS6359531B2 (ko)
JPS5840337B2 (ja) 半導体集積回路の製造方法
JPS61144036A (ja) 半導体装置およびその製造方法
JPS60121737A (ja) 半導体装置の素子分離方法
JP2590480B2 (ja) 半導体装置の製造方法
JP2775845B2 (ja) 半導体装置の製造方法
JPS5939044A (ja) 絶縁分離集積回路用基板の製造方法
JPS61174736A (ja) 誘電体分離基板の製造方法
JPS6152983B2 (ko)