JPS62212300A - 炭化けい素ウイスカ−の製造方法 - Google Patents

炭化けい素ウイスカ−の製造方法

Info

Publication number
JPS62212300A
JPS62212300A JP61053243A JP5324386A JPS62212300A JP S62212300 A JPS62212300 A JP S62212300A JP 61053243 A JP61053243 A JP 61053243A JP 5324386 A JP5324386 A JP 5324386A JP S62212300 A JPS62212300 A JP S62212300A
Authority
JP
Japan
Prior art keywords
silicon carbide
carbon
carbide whiskers
hydrogen
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61053243A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0329040B2 (enExample
Inventor
Motoyuki Yamada
素行 山田
Minoru Takamizawa
高見沢　稔
Akira Hayashida
章 林田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP61053243A priority Critical patent/JPS62212300A/ja
Publication of JPS62212300A publication Critical patent/JPS62212300A/ja
Publication of JPH0329040B2 publication Critical patent/JPH0329040B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP61053243A 1986-03-11 1986-03-11 炭化けい素ウイスカ−の製造方法 Granted JPS62212300A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61053243A JPS62212300A (ja) 1986-03-11 1986-03-11 炭化けい素ウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61053243A JPS62212300A (ja) 1986-03-11 1986-03-11 炭化けい素ウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS62212300A true JPS62212300A (ja) 1987-09-18
JPH0329040B2 JPH0329040B2 (enExample) 1991-04-22

Family

ID=12937350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61053243A Granted JPS62212300A (ja) 1986-03-11 1986-03-11 炭化けい素ウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS62212300A (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58120599A (ja) * 1982-01-12 1983-07-18 Onoda Cement Co Ltd β−炭化珪素ウイスカ−の製造方法
JPS5945637A (ja) * 1982-09-06 1984-03-14 Sanyo Electric Co Ltd デイスクレコ−ド記録装置
JPS6016809A (ja) * 1983-07-07 1985-01-28 Mitsui Toatsu Chem Inc 炭化珪素ウイスカ−の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58120599A (ja) * 1982-01-12 1983-07-18 Onoda Cement Co Ltd β−炭化珪素ウイスカ−の製造方法
JPS5945637A (ja) * 1982-09-06 1984-03-14 Sanyo Electric Co Ltd デイスクレコ−ド記録装置
JPS6016809A (ja) * 1983-07-07 1985-01-28 Mitsui Toatsu Chem Inc 炭化珪素ウイスカ−の製造方法

Also Published As

Publication number Publication date
JPH0329040B2 (enExample) 1991-04-22

Similar Documents

Publication Publication Date Title
JPH03357B2 (enExample)
JPS62129000A (ja) 炭化けい素ウイスカ−の製造方法
JPS58217422A (ja) 高純度シランの製造方法
CN106430212A (zh) 一种工业化大规模生产碳化硅粉体的方法
JP2003171117A (ja) 疎水性シリカ微粉末及びその製造方法
US20040022713A1 (en) Method for producing trichlorosilane
CN1620404A (zh) 制备无定形硅的方法和/或由此获得的有机卤硅烷
JPH01188414A (ja) 多結晶シリコンの製造におけるポリマーのトリクロロシラン転化方法
JPH03500528A (ja) β‐炭化珪素の製造方法
JPS62212300A (ja) 炭化けい素ウイスカ−の製造方法
JPH0476359B2 (enExample)
JPH0253400B2 (enExample)
US20020044904A1 (en) Process for preparing trichlorosilane
JPS62241812A (ja) 窒化珪素の製造法
Li et al. Growth of nanowires from annealing SiBONC nanopowders
RU2789998C1 (ru) Способ получения карбида кремния
Meng et al. Synthesis of one-dimensional nanostructures—β-SiC nanorods with and without amorphous SiO2 wrapping layers
JPH0357047B2 (enExample)
JPH02180710A (ja) 微粉状αまたはβ炭化ケイ素の製造方法
JP2000044223A (ja) 炭化珪素の製造方法
JPS6046912A (ja) 超微粒子状炭化けい素の製造方法
JPH05186211A (ja) 微粒子状炭化珪素の製造方法
JP2604753B2 (ja) 炭化ケイ素ウイスカーの製造方法
JPH0776159B2 (ja) 炭化珪素ウィスカーの製造方法
JPH03232800A (ja) 炭化珪素ウィスカーの製造方法