JPS6220709B2 - - Google Patents
Info
- Publication number
- JPS6220709B2 JPS6220709B2 JP55145696A JP14569680A JPS6220709B2 JP S6220709 B2 JPS6220709 B2 JP S6220709B2 JP 55145696 A JP55145696 A JP 55145696A JP 14569680 A JP14569680 A JP 14569680A JP S6220709 B2 JPS6220709 B2 JP S6220709B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- insulating film
- region
- electrode
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 239000003990 capacitor Substances 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14569680A JPS5660052A (en) | 1980-10-20 | 1980-10-20 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14569680A JPS5660052A (en) | 1980-10-20 | 1980-10-20 | Semiconductor memory device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50154769A Division JPS5279679A (en) | 1975-12-26 | 1975-12-26 | Semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5660052A JPS5660052A (en) | 1981-05-23 |
JPS6220709B2 true JPS6220709B2 (fr) | 1987-05-08 |
Family
ID=15390984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14569680A Granted JPS5660052A (en) | 1980-10-20 | 1980-10-20 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5660052A (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4989053A (en) * | 1989-03-27 | 1991-01-29 | Shelton Everett K | Nonvolatile process compatible with a digital and analog double level metal MOS process |
US5554545A (en) * | 1994-09-01 | 1996-09-10 | United Microelectronics Corporation | Method of forming neuron mosfet with different interpolysilicon oxide thickness |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
JPS4964382A (fr) * | 1972-06-30 | 1974-06-21 |
-
1980
- 1980-10-20 JP JP14569680A patent/JPS5660052A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
JPS4964382A (fr) * | 1972-06-30 | 1974-06-21 |
Also Published As
Publication number | Publication date |
---|---|
JPS5660052A (en) | 1981-05-23 |
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