JPH022298B2 - - Google Patents
Info
- Publication number
- JPH022298B2 JPH022298B2 JP55170408A JP17040880A JPH022298B2 JP H022298 B2 JPH022298 B2 JP H022298B2 JP 55170408 A JP55170408 A JP 55170408A JP 17040880 A JP17040880 A JP 17040880A JP H022298 B2 JPH022298 B2 JP H022298B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- layer
- forming
- oxide film
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 238000001947 vapour-phase growth Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55170408A JPS5793572A (en) | 1980-12-03 | 1980-12-03 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55170408A JPS5793572A (en) | 1980-12-03 | 1980-12-03 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5793572A JPS5793572A (en) | 1982-06-10 |
| JPH022298B2 true JPH022298B2 (fr) | 1990-01-17 |
Family
ID=15904362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55170408A Granted JPS5793572A (en) | 1980-12-03 | 1980-12-03 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5793572A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59113659A (ja) * | 1982-12-20 | 1984-06-30 | Toshiba Corp | Ｍｏｓダイナミツクメモリ |
| DE3304651A1 (de) * | 1983-02-10 | 1984-08-16 | Siemens AG, 1000 Berlin und 8000 München | Dynamische halbleiterspeicherzelle mit wahlfreiem zugriff (dram) und verfahren zu ihrer herstellung |
| JPH0648718B2 (ja) * | 1984-10-04 | 1994-06-22 | 沖電気工業株式会社 | 半導体メモリ素子の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534500A (en) * | 1978-08-30 | 1980-03-11 | Siemens Ag | Integrated mos semiconductor memory and method of manufacturing same |
| JPS5588368A (en) * | 1978-12-26 | 1980-07-04 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Preparation of semiconductor device |
| JPS5591158A (en) * | 1978-12-26 | 1980-07-10 | Ibm | Method of fabricating semiconductor device |
-
1980
- 1980-12-03 JP JP55170408A patent/JPS5793572A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534500A (en) * | 1978-08-30 | 1980-03-11 | Siemens Ag | Integrated mos semiconductor memory and method of manufacturing same |
| JPS5588368A (en) * | 1978-12-26 | 1980-07-04 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Preparation of semiconductor device |
| JPS5591158A (en) * | 1978-12-26 | 1980-07-10 | Ibm | Method of fabricating semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5793572A (en) | 1982-06-10 |
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