JPS6220697B2 - - Google Patents
Info
- Publication number
- JPS6220697B2 JPS6220697B2 JP56137238A JP13723881A JPS6220697B2 JP S6220697 B2 JPS6220697 B2 JP S6220697B2 JP 56137238 A JP56137238 A JP 56137238A JP 13723881 A JP13723881 A JP 13723881A JP S6220697 B2 JPS6220697 B2 JP S6220697B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- element isolation
- insulating film
- region
- isolation region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56137238A JPS5839027A (ja) | 1981-09-01 | 1981-09-01 | Mos型半導体装置の製造方法 |
US06/307,877 US4560421A (en) | 1980-10-02 | 1981-10-02 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56137238A JPS5839027A (ja) | 1981-09-01 | 1981-09-01 | Mos型半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5839027A JPS5839027A (ja) | 1983-03-07 |
JPS6220697B2 true JPS6220697B2 (enrdf_load_stackoverflow) | 1987-05-08 |
Family
ID=15193996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56137238A Granted JPS5839027A (ja) | 1980-10-02 | 1981-09-01 | Mos型半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5839027A (enrdf_load_stackoverflow) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5061189A (enrdf_load_stackoverflow) * | 1973-09-28 | 1975-05-26 |
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1981
- 1981-09-01 JP JP56137238A patent/JPS5839027A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5839027A (ja) | 1983-03-07 |