JPS6217867B2 - - Google Patents

Info

Publication number
JPS6217867B2
JPS6217867B2 JP56065030A JP6503081A JPS6217867B2 JP S6217867 B2 JPS6217867 B2 JP S6217867B2 JP 56065030 A JP56065030 A JP 56065030A JP 6503081 A JP6503081 A JP 6503081A JP S6217867 B2 JPS6217867 B2 JP S6217867B2
Authority
JP
Japan
Prior art keywords
film
element isolation
single crystal
insulating film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56065030A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57180144A (en
Inventor
Satoru Maeda
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56065030A priority Critical patent/JPS57180144A/ja
Priority to US06/307,877 priority patent/US4560421A/en
Publication of JPS57180144A publication Critical patent/JPS57180144A/ja
Publication of JPS6217867B2 publication Critical patent/JPS6217867B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP56065030A 1980-10-02 1981-04-28 Manufacture of semiconductor device Granted JPS57180144A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56065030A JPS57180144A (en) 1981-04-28 1981-04-28 Manufacture of semiconductor device
US06/307,877 US4560421A (en) 1980-10-02 1981-10-02 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56065030A JPS57180144A (en) 1981-04-28 1981-04-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57180144A JPS57180144A (en) 1982-11-06
JPS6217867B2 true JPS6217867B2 (enrdf_load_stackoverflow) 1987-04-20

Family

ID=13275164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56065030A Granted JPS57180144A (en) 1980-10-02 1981-04-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57180144A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01202231A (ja) * 1988-02-08 1989-08-15 Toray Ind Inc 水中動物蝟集素材および餌料礁および人工魚礁

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02309648A (ja) * 1989-05-24 1990-12-25 Seiko Instr Inc 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061189A (enrdf_load_stackoverflow) * 1973-09-28 1975-05-26
JPS5541715A (en) * 1978-09-19 1980-03-24 Oki Electric Ind Co Ltd Production of semiconductor device
JPS566444A (en) * 1979-06-28 1981-01-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Production of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01202231A (ja) * 1988-02-08 1989-08-15 Toray Ind Inc 水中動物蝟集素材および餌料礁および人工魚礁

Also Published As

Publication number Publication date
JPS57180144A (en) 1982-11-06

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